TK20J60T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS)
TK20J60T
Switching Regulator Applications
15.9max.
Ф3.2±0.2
1.0
4.5
9.0
Unit: mm
3.3max.
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Gate-source voltage
DC
Drain current
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
600
±30
20
40
190
209
20
19
150
-55 to 150
A
W
mJ
A
mJ
°C
°C
Unit
V
V
1.8max.
0.6
－0.1
＋0.3
1.0
－0.25
＋0.3
5.45±0.2
5.45±0.2
4.8max.
1
2
3
2.8
Pulse (t
=
1 ms)
(Note 1)
Drain power dissipation (Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
(Note 3)
1. Gate
2. Drain(heat sink)
3. Source
JEDEC
JEITA
TOSHIBA
⎯
SC-65
2-16C1B
Weight : 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
0.658
50
Unit
2
°C/W
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25 °C (initial), L = 0.91 mH, R
G
= 25
Ω,
I
AR
= 20 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
3
1
1
2009-09-29
20.5±0.5
2.0±0.3
2.0
20.0±0.3
•
•
•
•
Low drain-source ON resistance: R
DS (ON)
= 0.165
Ω
(typ.)
High forward transfer admittance:
⎪Y
fs
⎪
= 12 S (typ.)
Low leakage current: I
DSS
= 100
μA
(max) (V
DS
= 600 V)
Enhancement-mode: V
th
= 3.0 to 5.0 V (V
DS
= 10 V, I
D
= 1 mA)
2.0
TK20J60T
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
t
f
t
off
Q
g
Q
gs
Q
gd
V
DD
∼
400 V, V
GS
=
10 V, I
D
=
20 A
−
Duty
≤
1%, t
w
=
10
μs
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
⎪Y
fs
⎪
C
iss
C
rss
C
oss
t
r
t
on
10 V
V
GS
0V
50
Ω
I
D
=
10A
V
OUT
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
Test Condition
V
GS
= ±30
V, V
DS
=
0 V
V
DS
=
600 V, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
0 V
V
DS
=
10 V, I
D
=
1 mA
V
GS
=
10 V, I
D
=
10 A
V
DS
=
10 V, I
D
=
10 A
Min
⎯
⎯
600
3.0
⎯
3
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
0.165
12
1580
175
3800
40
75
10
120
30
17
13
Max
±1
100
⎯
5.0
0.19
⎯
⎯
⎯
pF
Unit
μA
μA
V
V
Ω
S
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
ns
R
L
=
30Ω
V
DD
∼
300 V
−
⎯
⎯
⎯
⎯
⎯
nC
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
⎯
⎯
I
DR
=
20 A, V
GS
=
0 V
I
DR
=
20 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/μs
Min
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
500
11
Max
20
40
-1.7
⎯
⎯
Unit
A
A
V
ns
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
TOSHIBA
K20J60T
Part No. (or abbreviation code)
Lot No.
Note 4
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2009-09-29
TK20J60T
I
D
– V
DS
20
Common source
Tc
=
25°C
Pulse Test
40
10
8
7.5
7
32
10
8
7.5
I
D
– V
DS
Common source
Tc
=
25°C
Pulse Test
16
(A)
ID
12
ID
6.5
(A)
24
7
Drain current
8
6
4
Drain current
16
6.5
VGS
=
5.5V
8
6
VGS
=
5.5 V
0
0
1
2
3
4
5
0
0
10
20
30
40
50
Drain-source voltage
VDS
(V)
Drain-source voltage
VDS
(V)
40
I
D
– V
GS
Common source
VDS
=
20 V
Pulse Test
10
V
DS
– V
GS
Common source
Tc
=
25°C
Pulse Test
32
8
ID (A)
24
VDS
Drain-source voltage
(V)
6
Drain current
16
100
8
Tc
= −55°C
4
ID
=
20 A
25
2
10
5
0
0
2
4
6
8
10
0
0
4
8
12
16
20
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
|Y
fs
| – I
D
100
Common source
VDS
=
10 V
Pulse Test
10
Tc
= −55°C
100
1
R
DS (ON)
– I
D
Forward transfer admittance
⎪Y
fs
⎪
25
Drain-source ON resistance RDS
(ON)
(Ω)
(S)
VGS
=
10,15 V
0.1
1
Common source
Tc
=
25°C
Pulse Test
0.01
1
10
100
0.1
0.1
1
10
100
Drain current ID (A)
Drain current ID (A)
3
2009-09-29
TK20J60T
R
DS (ON)
−
Tc
0.5
I
DR
−
V
DS
100
Common source
Tc
=
25°C
Pulse Test
Drain-source ON resistance RDS
(ON)
(Ω)
0.4
ID
=
20A
0.3
10
5
0.2
Drain reverse current IDR (A)
Common source
VGS
=
10 V
Pulse Test
10
10
5
1
3
0.1
1
VGS
=
0 V
0
−80
−40
0
40
80
120
160
0.1
0
0.4
0.8
1.2
1.6
Case temperature Tc (°C)
Drain-source voltage
VDS
(V)
Capacitance – V
DS
100000
5
V
th
−
Tc
Gate threshold voltage Vth (V)
10000
4
(pF)
Ciss
1000
Coss
100
Common source
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
Pulse Test
1
10
Crss
Capacitance C
3
2
10
1
1
0.1
100
0
−80
Common source
VDS
=
10 V
ID
=
1mA
Pulse Test
−40
0
40
80
120
160
Drain-source voltage
VDS
(V)
Case temperature Tc (°C)
P
D
−
Tc
250
500
Dynamic input / output
characteristics
20
Drain power dissipation PD (W)
(V)
200
400
16
200V
Drain-source voltage
100V
VDD
=
400V
100
200
VGS
100
Common source
ID
=
20 A
Tc
=
25°C
Pulse Test
0
10
20
30
40
50
8
50
4
0
0
40
80
120
160
200
0
0
Case temperature Tc (°C)
Total gate charge Qg (nC)
4
2009-09-29
Gate-source voltage
150
300
12
VGS (V)
VDS
VDS
TK20J60T
r
th
– t
w
Normalized transient thermal impedance
r
th (t)
/R
th (ch-c)
10
1
Duty = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
10μ
SINGLE PULSE
PDM
t
T
Duty
=
t/T
Rth (ch-c)
=
0.658°C/W
1m
10m
100m
1
10
100μ
Pulse width
t
w
(s)
SAFE OPERATING AREA
100
ID max (pulse)
*
ID max (continuous)
10
1 ms
*
100
μs
*
400
E
AS
– T
ch
E
AS
(mJ)
Avalanche energy
300
Drain current I
D
(A)
1
DC OPEATION
Tc
=
25°C
200
0.1
100
0.01
※
Single pulse Ta=25℃
Curves must be derated
linearly with increase in
temperature.
VDSS max
0
25
50
75
100
125
150
Channel temperature (initial)
1000
T
ch
(°C)
0.001
1
10
100
Drain-source voltage
V
DS
(V)
15 V
−15
V
B
VDSS
I
AR
V
DD
V
DS
TEST CIRCUIT
R
G
=
25
Ω
V
DD
=
90 V, L
=
0.91 mH
WAVE FORM
Ε
AS
=
⎛
⎞
1
B VDSS
⎟
⋅
L
⋅
I2
⋅ ⎜
⎜
B
⎟
2
⎝
VDSS
−
VDD
⎠
5
2009-09-29
