TK5P60W5
MOSFETs
Silicon N-Channel MOS (DTMOS)
TK5P60W5
1. Applications
•
•
Switching Voltage Regulators
Motor Drivers
2. Features
(1)
(2)
(3)
(4)
Fast reverse recovery time: t
rr
= 65 ns (typ.)
Low drain-source on-resistance: R
DS(ON)
= 0.84
Ω
(typ.)
by using Super Junction Structure : DTMOS
Easy to control Gate switching
Enhancement mode: V
th
= 3 to 4.5 V (V
DS
= 10 V, I
D
= 0.23 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain (Heatsink)
3: Source
DPAK
4. Absolute Maximum Ratings (Note) (T
a
= 25
unless otherwise specified)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
Storage temperature
(Note 1)
(Note 1)
(T
c
= 25
)
(Note 2)
(Note 1)
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
I
DR
I
DRP
T
ch
T
stg
Rating
600
±30
4.5
18
60
70
1.4
4.5
18
150
-55 to 150
W
mJ
A
A
Unit
V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
©2015 Toshiba Corporation
1
2015-07
2016-10-21
Rev.6.0
TK5P60W5
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Symbol
R
th(ch-c)
Max
2.09
Unit
/W
Note 1: Ensure that the channel temperature does not exceed 150
.
Note 2: V
DD
= 90 V, T
ch
= 25
(initial), L = 63.1 mH, R
G
= 25
Ω,
I
AR
= 1.4 A
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
©2015 Toshiba Corporation
2
2016-10-21
Rev.6.0
TK5P60W5
6. Electrical Characteristics
6.1. Static Characteristics (T
a
= 25
unless otherwise specified)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Symbol
I
GSS
I
DSS
V
(BR)DSS
V
th
R
DS(ON)
Test Condition
V
GS
=
±30
V, V
DS
= 0 V
V
DS
= 600 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
V
DS
= 10 V, I
D
= 0.23 mA
V
GS
= 10 V, I
D
= 2.3 A
Min
600
3
Typ.
0.84
Max
±1
100
4.5
0.99
Ω
V
Unit
µA
6.2. Dynamic Characteristics (T
a
= 25
unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Effective output capacitance
Gate resistance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
MOSFET dv/dt ruggedness
Symbol
C
iss
C
rss
C
oss
C
o(er)
r
g
t
r
t
on
t
f
t
off
dv/dt
V
DD
= 0 to 400 V, I
D
= 2.3 A
V
DS
= 0 to 400 V, V
GS
= 0 V
V
DS
= OPEN , f = 1 MHz
See Figure 6.2.1
Test Condition
V
DS
= 300 V, V
GS
= 0 V, f = 1 MHz
Min
25
Typ.
370
1
11
17.5
9
20
45
5
45
Max
V/ns
Ω
ns
Unit
pF
V
DD
≈
400 V
V
GS
= 10 V/0 V
I
D
= 2.3 A
R
L
= 173
Ω
R
G
= 10
Ω
Duty
≤
1 %, t
w
= 10
µs
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (T
a
= 25
unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Q
g
Q
gs1
Q
gd
Test Condition
V
DD
≈
400 V, V
GS
= 10 V, I
D
= 4.5 A
Min
Typ.
11.5
3.5
7.5
Max
Unit
nC
6.4. Source-Drain Characteristics (T
a
= 25
unless otherwise specified)
Characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Diode dv/dt ruggedness
Symbol
V
DSF
t
rr
Q
rr
I
rr
dv/dt
I
DR
= 2.3 A, V
GS
= 0 V, V
DD
= 400 V
Test Condition
I
DR
= 4.5 A, V
GS
= 0 V
I
DR
= 2.3 A, V
GS
= 0 V
-dI
DR
/dt = 100 A/µs
Min
50
Typ.
65
0.25
7.5
Max
-1.7
104
Unit
V
ns
µC
A
V/ns
©2015 Toshiba Corporation
3
2016-10-21
Rev.6.0
TK5P60W5
7. Marking
Fig. 7.1 Marking
©2015 Toshiba Corporation
4
2016-10-21
Rev.6.0
TK5P60W5
8. Characteristics Curves (Note)
Fig. 8.1 I
D
- V
DS
Fig. 8.2 I
D
- V
DS
Fig. 8.3 I
D
- V
GS
Fig. 8.4 V
DS
- V
GS
Fig. 8.5 V
DSS
- T
a
Fig. 8.6 R
DS(ON)
- I
D
©2015 Toshiba Corporation
5
2016-10-21
Rev.6.0
微控制器 MCU
