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TP30-120

TRISILTM

器件类别：分立半导体    二极管   

厂商名称：ST(意法半导体)

厂商官网：http://www.st.com/

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
ST(意法半导体)
零件包装代码
DO-15
包装说明
PLASTIC PACKAGE-2
针数
2
Reach Compliance Code
_compli
ECCN代码
EAR99
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码
DO-15
JESD-30 代码
O-PALF-W2
JESD-609代码
e0
元件数量
1
端子数量
2
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度（摄氏度）
NOT SPECIFIED
极性
BIDIRECTIONAL
最大功率耗散
3 W
认证状态
Not Qualified
参考标准
IEC-1000-4-5
表面贴装
NO
技术
AVALANCHE
端子面层
Tin/Lead (Sn/Pb)
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
®
TP30-xxx Series
TRISIL
TM
FEATURES
BIDIRECTIONAL CROWBAR PROTECTION.
VOLTAGE RANGE: FROM 62 V TO 270 V.
HOLDING CURRENT :
I
H
= 150 mA min.
REPETITIVE PEAK PULSE CURRENT :
I
PP
= 30 A, 10/1000
µs.
JEDEC REGISTERED PACKAGE OUTLINE
DESCRIPTION
The TP30-xxx series has been designed to protect
telecommunication equipment against lightning
surges and overvoltages induced by AC power
lines.
F126
(JEDEC DO-204AC)
SCHEMATIC DIAGRAM
COMPLIES WITH THE
FOLLOWING STANDARDS:
(CCITT) ITU-K20
(CCITT) ITU-K17
VDE0433
VDE0878
IEC-1000-4-5
FCC Part 68, lightning surge
type A
FCC Part 68, lightning surge
type B
BELLCORE TR-NWT-001089
First level
BELLCORE TR-NWT-001089
Second level
CNET l31-24
November 1998 - Ed: 5A
Peak Surge
Voltage
(V)
1000
1500
2000
2000
level 2
level 3
1500
800
1000
2500
1000
5000
1000
Voltage
Waveform
(µs)
10/700
10/700
10/700
1.2/50
10/700
1.2/50
10/160
10/560
9/720
2/10
10/1000
2/10
0.5/700
Current
Waveform
(µs)
5/310
5/310
5/310
1/20
5/310
8/20
10/160
10/560
5/320
2/10
10/1000
2/10
0.8/310
Admissible
Ipp
(A)
25
38
40
50
25
50
65
50
25
125
30
125
25
Necessary
Resistor
(Ω)
-
-
10
-
-
-
15.5
8.0
-
15.0
23.3
15.0
-
1/6
TP30-xxx Series
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25°C)
Symbol
P
I
PP
I
TSM
I
2
t
dV/dt
T
stg
T
j
T
L
Peak pulse current
Non repetitive surge peak on-state current
I
2
t value for fusing
Parameter
Power dissipation on infinite heatsink
T
amb
= 50
°C
10/1000
µs
8/20
µs
tp = 20 ms
tp = 20 ms
Value
3
30
60
15
1
5
- 55 to + 150
150
230
Unit
W
A
A
A
2
s
kV/µs
°C
°C
°C
Critical rate of rise of off-state voltage
V
RM
Storage temperature range
Maximum junction temperature
Maximumlead temperaturefor solderingduring 10s at 5mm forcase
THERMAL RESISTANCES
Symbol
R
th
(j-l)
R
th
(j-a)
Junction to leads
Junction to ambient on printed circuit
with standard footprint dimension
Parameter
Value
60
100
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C)
Symbol
V
RM
I
RM
V
R
V
BR
V
BO
I
H
I
BO
I
PP
C
Parameter
Stand-off voltage
Leakage current at stand-off voltage
Continuous Reverse voltage
Breakdown voltage
Breakover voltage
Holding current
Breakover current
Peak pulse current
Capacitance
2/6
TP30-xxx Series
Type
I
RM
@ V
RM
max
µA
V
I
R
@ V
R
max
note 1
µA
V
V
BO
@ I
BO
max
note 2
V
mA
I
H
min
note 3
mA
C
typ
note 4
pF
typ
note 5
20
20
16
16
14
14
12
12
12
12
TP30-62
TP30-68
TP30-100
TP30-120
TP30-130
TP30-180
TP30-200
TP30-220
TP30-240
TP30-270
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
2
2
2
2
2
2
2
2
2
2
56
61
90
108
117
162
180
198
216
243
50
50
50
50
50
50
50
50
50
50
62
68
100
120
130
180
200
220
240
270
82
90
133
160
173
240
267
293
320
360
800
800
800
800
800
800
800
800
800
800
150
150
150
150
150
150
150
150
150
150
50
50
40
40
35
35
30
30
30
30
IR measured at VR guarantee VBRmin
≥
VR
Measured at 50 Hz (1 cycle) - See test circuit 1.
See test circuit 2.
VR = 1V, F = 1MHz.
VR = 50V, F = 1MHz.
TEST CIRCUIT 1 FOR I
BO
and V
BO
parameters:
tp = 20ms
Auto
Transformer
220V/2A
static
relay.
K
R1
140
R2
240
220V
Vout
IBO
measure
Transformer
220V/800V
5A
D.U.T
V BO
measure
TEST PROCEDURE :
Pulse Test duration (tp = 20ms):
- For Bidirectional devices = Switch K is closed
- For Unidirectional devices = Switch K is open.
V
OUT
Selection
- Device with V
BO
<
250 Volt
- V
OUT
= 250 V
RMS
, R
1
= 140
Ω.
- Device with V
BO
≥
250 Volt
- V
OUT
= 480 V
RMS
, R
2
= 240
Ω.
3/6
TP30-xxx Series
TEST CIRCUIT 2 for I
H
parameter.
R
D.U.T.
V
BAT
= - 48 V
Surge generator
- V
P
This is a GO-NOGO Test which allows to confirm the holding current (I
H
) level in a functional
test circuit.
TEST PROCEDURE :
1) Adjust the current level at the I
H
value by short circuiting the AK of the D.U.T.
2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000
µs.
3) The D.U.T will come back off-state within 50 ms max.
4/6
TP30-xxx Series
Fig. 1:
Non repetitive surge peak on-sate current
versus overload duration (Tj initial = 25°C).
ITSM(A)
20
F = 50Hz
Fig. 2:
Relative variation of holding current versus
junction temperature.
IH[Tj] / IH[Tj=25°C]
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40
15
10
5
0
1E-2
1E-1
1E+0
t(s)
1E+1
1E+2
1E+3
-20
0
20
40
Tj(°C)
60
80
100
120
Fig. 3:
Relative variation of junction capacitance
versus reverse applied voltage (typical values).
Note:
For VRM upper than 56V, the curve is extrapolated (dotted line)
Fig. 4:
On-state voltage versus on-state current
(typical values).
C[VR]/C[VR=1V]
1.0
F = 1MHz
IT(A)
50
Tj = 25°C
0.5
20
10
5
0.2
2
0.1
1
10
VR(V)
100
300
1
0
1
2
3
4
5
6
VT(V)
7
8
9
10
Fig. 5:
Variation of thermal impedance junction to
ambient versus pulse duration.
Zth(j-a)(°CW)
1E+2
Fig. 6:
Relative variation of V
BO
voltage versus
junction temperature.
Vbo[Tj]/Vbo[Tj=25°C]
1.10
1.05
1E+1
1.00
1E+0
0.95
1E-1
1E-3
62 V
270 V
1E-2
1E-1
1E+0
tp(s)
1E+1
1E+2 5E+2
0.90
-40
-20
0
20
40
Tj(°C)
60
80
100
5/6
查看更多>
参数对比
与TP30-120相近的元器件有：TP30-62、TP30-68、TP30-240、TP30-270、TP30-200、TP30-220、TP30-180、TP30-130、TP30-100。描述及对比如下：
型号 TP30-120 TP30-62 TP30-68 TP30-240 TP30-270 TP30-200 TP30-220 TP30-180 TP30-130 TP30-100
描述 TRISILTM TRISILTM TRISILTM TRISILTM TRISILTM TRISILTM TRISILTM TRISILTM TRISILTM TRISILTM
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
厂商名称 ST(意法半导体) ST(意法半导体) ST(意法半导体) ST(意法半导体) ST(意法半导体) ST(意法半导体) ST(意法半导体) ST(意法半导体) ST(意法半导体) ST(意法半导体)
零件包装代码 DO-15 DO-15 DO-15 DO-15 DO-15 DO-15 DO-15 DO-15 DO-15 DO-15
包装说明 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2
针数 2 2 2 2 2 2 2 2 2 2
Reach Compliance Code _compli _compli _compli _compli _compli _compli _compli _compli _compli _compli
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码 DO-15 DO-15 DO-15 DO-15 DO-15 DO-15 DO-15 DO-15 DO-15 DO-15
JESD-30 代码 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
JESD-609代码 e0 e0 e0 e0 e0 e0 e0 e0 e0 e0
元件数量 1 1 1 1 1 1 1 1 1 1
端子数量 2 2 2 2 2 2 2 2 2 2
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
封装形式 LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性 BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL
最大功率耗散 3 W 3 W 3 W 3 W 3 W 3 W 3 W 3 W 3 W 3 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
参考标准 IEC-1000-4-5 IEC-1000-4-5 IEC-1000-4-5 IEC-1000-4-5 IEC-1000-4-5 IEC-1000-4-5 IEC-1000-4-5 IEC-1000-4-5 IEC-1000-4-5 IEC-1000-4-5
表面贴装 NO NO NO NO NO NO NO NO NO NO
技术 AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
端子位置 AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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器件捷径:
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