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TS20P03GD2G

Bridge Rectifier Diode, 20A, 200V V(RRM),

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Taiwan Semiconductor
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
UL RECOGNIZED
最小击穿电压
200 V
配置
BRIDGE, 4 ELEMENTS
二极管元件材料
SILICON
二极管类型
BRIDGE RECTIFIER DIODE
最大正向电压 (VF)
1 V
JESD-30 代码
R-PSFM-T4
最大非重复峰值正向电流
250 A
元件数量
4
相数
1
端子数量
4
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
20 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
最大重复峰值反向电压
200 V
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
文档预览
TS20P01G thru TS20P07G
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Glass passivated junction
- Ideal for printed circuit board
- Typical IR less than 0.1μA
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated Bridge Rectifiers
TS-6P
MECHANICAL DATA
Case:
TS-6P
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
Polarity as marked on the body
Mounting torque:
8.17 in-lbs maximum
Weight:
7.15 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
@ 10 A
@ 20 A
Maximum DC reverse current
at rated DC blocking voltage
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
T
J
=25
T
J
=125℃
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
TS20P TS20P TS20P TS20P TS20P TS20P TS20P
01G
50
35
50
02G
100
70
100
03G
200
140
200
04G
400
280
400
20
250
259
1.0
1.1
10
500
0.8
- 55 to +150
- 55 to +150
O
05G
600
420
600
06G
800
560
800
07G
1000
700
1000
UNIT
V
V
V
A
A
A
2
s
V
I
R
R
θJC
T
J
T
STG
μA
C/W
O
O
C
C
Document Number: DS_D1312006
Version: K13
TS20P01G thru TS205P07G
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PACKING CODE
C2
X0
D2
Suffix "G"
GREEN COMPOUND
CODE
TS20P0xG
(Note 1)
TS-6P
TS-6P
TS-6P
15 / TUBE
Forming
15 / TUBE (Auto)
PACKAGE
PACKING
Note 1: "x" defines voltage from 50V (TS20P01G) to 1000V (TS20P07G)
EXAMPLE
PREFERRED P/N
TS20P07G C2
TS20P07G C2G
PART NO.
TS20P07G
TS20P07G
PACKING CODE
C2
C2
G
Green compound
GREEN COMPOUND
CODE
DESCRIPTION
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
PEAK FORWARD SURGE CURRENT (A)
25
20
15
10
5
0
0
FIG.1 MAXIMUM DERATING CURVE FOR OUTPUT
CURRENT
250
200
150
100
50
0
1
FIG. 2 MAXIMUM FORWARD SURGE CURRENT
AVERAGE FORWARD
A
CURRENT (A)
8.3ms Single Half Sin-wave
(JEDEC Method)
RESISTER OR
INDUCTIVE LOAD
WITH HEATSINK
20
40
60
80
100
120
o
C)
CASE TEMPERATURE (
140
160
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 3 TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS REVERSE
A
CURRENT (μA)
100
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
10
T
J
=125℃
INSTANTANEOUS FORWARD
A
CURRENT (A)
100
120
140
10
1
T
J
=25℃
0.1
1
0.01
0
20
40
60
80
PERCENT OF RATED PEAK REVERSE VOLTAGE V)
0.1
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
INSTANTANEOUS FORWARD VOLTAGE (V)
Document Number: DS_D1312006
Version: K13
TS20P01G thru TS205P07G
Taiwan Semiconductor
FIG. 5 TYPICAL JUNCTION CAPACITANCE
1000
JUNCTION CAPACITANCE (pF)
A
100
f=1.0MHz
Vsig=50mVp-p
10
0.1
1
10
100
REVERSE VOLTAGE (V)
PACKAGE OUTLINE DIMENSIONS
Unit (mm)
Min
29.70
2.30
2.00
0.90
9.80
7.30
19.70
-
3.80
17.00
4.40
3.40
10.80
3.10
2.50
0.60
Max
30.30
2.70
2.40
1.10
10.20
7.70
20.30
4.80
4.20
18.00
4.80
3.80
11.20
3.40
2.90
0.70
Unit (inch)
Min
1.169
0.091
0.079
0.035
0.386
0.287
0.776
-
0.150
0.669
0.173
0.134
0.425
0.122
0.098
0.024
Max
1.193
0.106
0.094
0.043
0.402
0.303
0.799
0.189
0.165
0.709
0.189
0.150
0.441
0.134
0.114
0.028
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
MARKING DIAGRAM
P/N
G
YWW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Document Number: DS_D1312006
Version: K13
TS20P01G thru TS205P07G
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1312006
Version: K13
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