TSM024NA04LCR
Taiwan Semiconductor
N-Channel Power MOSFET
40V, 170A, 2.4mΩ
FEATURES
● Low R
DS(ON)
to minimize conductive losses
● Logic level
● Low gate charge for fast power switching
● 100% UIS and R
g
tested
● Compliant to RoHS directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PERFORMANCE PARAMETERS
PARAMETER
V
DS
R
DS(on)
(max)
Q
g
V
GS
= 10V
V
GS
= 4.5V
VALUE
40
2.4
mΩ
3
33
nC
UNIT
V
APPLICATIONS
● BLDC Motor Control
● Battery Power Management
● DC-DC converter
● Secondary Synchronous Rectification
PDFN56
Note:
MSL 3 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
(Note 2)
SYMBOL
V
DS
V
GS
T
C
= 25°C
T
A
= 25°C
I
D
I
DM
I
AS
E
AS
T
C
= 25°C
T
C
= 125°C
T
A
= 25°C
T
A
= 125°C
P
D
P
D
T
J
, T
STG
LIMIT
40
±20
170
25
680
48
346
125
25
2.6
0.5
- 55 to +150
UNIT
V
V
A
A
A
mJ
W
W
°C
Single Pulse Avalanche Current
(Note 2)
Single Pulse Avalanche Energy
Total Power Dissipation
Total Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL PERFORMANCE
PARAMETER
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
SYMBOL
R
ӨJC
R
ӨJA
LIMIT
1
48
UNIT
°C/W
°C/W
Thermal Performance Note:
R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-
thermal reference is defined at the solder mounting surface of the drain pins. R
ӨJA
is guaranteed by design while R
ӨCA
is
determined by the user’s board design.
1
Version: A1603
TSM024NA04LCR
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current
Drain-Source On-State Resistance
(Note 3)
CONDITIONS
V
GS
= 0V, I
D
= 250µA
V
GS
= V
DS
, I
D
= 250µA
V
GS
= ±20V, V
DS
= 0V
V
GS
= 0V, V
DS
= 40V
V
GS
= 0V, V
DS
= 40V
T
J
= 125°C
V
GS
= 10V, I
D
= 25A
V
GS
= 4.5V, I
D
= 25A
(Note 3)
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
MIN
40
1.2
--
--
--
--
--
--
TYP
--
1.7
--
--
--
1.8
2.2
50
MAX
--
2.5
±100
1
100
2.4
3
--
UNIT
V
V
nA
µA
R
DS(on)
g
fs
mΩ
S
Forward Transconductance
Dynamic
(Note 4)
V
DS
= 5V, I
D
= 25A
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Switching
(Note 4)
V
GS
= 10V, V
DS
= 20V,
I
D
= 25A
V
GS
= 4.5V, V
DS
= 20V,
I
D
= 25A
Q
g
Q
g
Q
gs
Q
gd
C
iss
--
--
--
--
--
--
--
0.4
67
33
12
11
4224
696
206
1.3
--
--
--
--
--
--
--
2.6
Ω
pF
nC
V
GS
= 0V, V
DS
= 20V
f = 1.0MHz
f = 1.0MHz, open drain
C
oss
C
rss
R
g
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode
Forward Voltage
(Note 3)
t
d(on)
V
GS
= 10V, V
DS
= 20V,
I
D
= 25A, R
G
= 2Ω,
t
r
t
d(off)
t
f
--
--
--
--
8.4
3.6
32.6
7.8
--
--
--
--
ns
V
GS
= 0V, I
S
= 25A
I
S
= 25A ,
dI/dt = 100A/μs
V
SD
t
rr
Q
rr
--
--
--
--
39
45
1.2
--
--
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.
2.
3.
4.
Current limited by package.
L = 0.3mH, V
GS
= 10V, V
DD
= 25V, R
G
= 25Ω, I
AS
= 48A, Starting T
J
= 25°C
Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.
Switching time is essentially independent of operating temperature.
ORDERING INFORMATION
PART NO.
TSM024NA04LCR RLG
PACKAGE
PDFN56
PACKING
2,500pcs / 13” Reel
2
Version: A1603
TSM024NA04LCR
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Output Characteristics
40
40
V
GS
=3V
30
V
GS
=10V
V
GS
=7V
V
GS
=5V
V
GS
=4.5V
V
GS
=4V
V
GS
=3.5V
Transfer Characteristics
I
D
, Continuous Drain Current (A)
I
D
, Continuous Drain Current (A)
30
20
20
10
10
150℃
0
0
1
2
25℃
-55℃
3
4
0
0
1
2
3
4
V
DS
, Drain to Source Voltage (V)
V
GS
, Gate to Source Voltage (V)
Gate-Source Voltage vs. Gate Charge
10
R
DS(ON)
, Drain-Source On-Resistance (Ω)
On-Resistance vs. Drain Current
0.005
V
GS
, Gate to Source Voltage (V)
0.004
8
V
DS
=20V
I
D
=25A
0.003
V
GS
=4.5V
0.002
V
GS
=10V
0.001
6
4
2
0
0
8
16
24
32
40
0
0
20
40
60
80
I
D
, Drain Current (A)
On-Resistance vs. Junction Temperature
0.01
Q
g
, Gate Charge (nC)
On-Resistance vs. Gate-Source Voltage
R
DS(on)
, Drain-Source On-Resistance (Ω)
R
DS(on)
, Drain-Source On-Resistance
(Normalized)
2
1.8
1.6
1.4
1.2
1
0.8
0.6
-75
-50
-25
0
25
50
75
100 125 150
V
GS
=10V
I
D
=25A
0.008
0.006
0.004
I
D
=25A
0.002
0
3
4
5
6
7
8
9
10
T
J
, Junction Temperature (°C)
V
GS
, Gate to Source Voltage (V)
3
Version: A1603
TSM024NA04LCR
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Capacitance vs. Drain-Source Voltage
4500
BV
DSS
vs. Junction Temperature
BV
DSS
(Normalized)
Drain-Source Breakdown Voltage
1.2
I
D
=1mA
1.1
5000
CISS
C, Capacitance (pF)
4000
3500
3000
2500
2000
1500
1000
500
0
0
10
20
CRSS
1
0.9
COSS
0.8
30
40
-75
-50
-25
0
25
50
75
100 125 150
V
DS
, Drain to Source Voltage (V)
Maximum Safe Operating Area, Junction-to-Case
1000
T
J
, Junction Temperature (°C)
Source-Drain Diode Forward Current vs. Voltage
100
R
DS(ON)
I
S
, Reverse Drain Current (A)
I
D
, Drain Current (A)
100
10
10
SINGLE PULSE
R
ӨJC
=1°C/W
T
C
=25°C
1
0
1
10
100
1
150℃
25℃
-55℃
0.1
0.2
0.4
0.6
0.8
1
1.2
V
DS,
Drain to Source Voltage (V)
10
V
SD
, Body Diode Forward Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance, Z
ӨJC
SINGLE PULSE
R
ӨJC
=1°C/W
1
0.1
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single
0.001
0.01
Notes:
Duty = t
1
/ t
2
T
J
= T
C
+ P
DM
x Z
ӨJC
x R
ӨJC
0.1
1
0.01
0.0001
t, Square Wave Pulse Duration (sec)
4
Version: A1603
TSM024NA04LCR
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
(Unit:
Millimeters)
PDFN56
SUGGESTED PAD LAYOUT
(Unit:
Millimeters)
MARKING DIAGRAM
G
Y
WW
F
= Halogen Free
= Year Code
= Week Code (01~52)
= Factory Code
TSC
024NA04
GYWWF
5
Version: A1603
模拟与混合信号
