TSM2N7002E
60V N-Channel MOSFET
SOT-23
SOT-323
Pin Definition:
1. Gate
2. Source
3. Drain
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
60
3 @ V
GS
= 10V
4 @ V
GS
= 4.5V
I
D
(mA)
300
200
Features
●
●
Low On-Resistance: 3Ω
Low Input and Output Leakage
Block Diagram
Application
●
●
Direct Logic-Level Interface: TTL/CMOS
Solid-State Relays
Ordering Information
Part No.
TSM2N7002ECX RF
TSM2N7002ECU RF
Package
SOT-23
SOT-323
Packing
3Kpcs / 7” Reel
3Kpcs / 7” Reel
N-Channel MOSFET
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
a,b
o
o
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
T
J
, T
STG
Ta = 25 C
Ta = 75 C
Limit
60
±20
300
1
300
350
220
+150
-55 to +150
Unit
V
V
mA
A
mA
mW
o
o
C
C
Thermal Performance
Parameter
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
Symbol
T
L
RӨ
JA
Limit
5
357
Unit
S
o
C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t
≤
5 sec.
c. The power dissipation of the package may result in a continuous drain current.
1/7
Version: A07
TSM2N7002E
60V N-Channel MOSFET
Electrical Specifications
(Ta = 25
o
C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
b
Conditions
V
GS
= 0V, I
D
= 10µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= ±20V, V
DS
= 0V
V
DS
= 60V, V
GS
= 0V
V
GS
= 10V, V
DS
= 7.5V
V
GS
= 4.5V, V
DS
= 10V
V
GS
= 10V, I
D
= 300mA
V
GS
= 4.5V, I
D
= 200mA
V
DS
= 15V, I
D
= 300mA
I
S
= 300mA, V
GS
= 0V
Symbol
BV
DSS
V
GS(TH)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
g
fs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
Min
60
1.0
--
--
800
500
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
--
--
--
1300
700
1.9
2.7
320
0.9
0.4
0.06
0.06
20
11
4
7.5
6
7.5
3
Max
--
2.5
±100
1.0
--
--
3
4
--
1.2
0.6
--
--
50
25
5
20
--
20
--
Unit
V
V
nA
µA
mA
Ω
mS
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
c
V
DS
= 10V, I
D
= 250mA,
V
GS
= 4.5V
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
nC
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
V
DD
= 30V,
I
D
= 100mA, V
GEN
= 10V,
nS
R
G
= 10Ω
Turn-Off Fall Time
t
f
Notes:
a. pulse test: PW
≤300µS,
duty cycle
≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
2/7
Version: A07
TSM2N7002E
60V N-Channel MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/7
Version: A07
TSM2N7002E
60V N-Channel MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/7
Version: A07
TSM2N7002E
60V N-Channel MOSFET
SOT-23 Mechanical Drawing
DIM
A
A1
B
C
D
E
F
G
H
I
J
SOT-23 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX.
0.95 BSC
0.037 BSC
1.9 BSC
0.074 BSC
2.60
3.00
0.102
0.118
1.40
1.70
0.055
0.067
2.80
3.10
0.110
0.122
1.00
1.30
0.039
0.051
0.00
0.10
0.000
0.004
0.35
0.50
0.014
0.020
0.10
0.20
0.004
0.008
0.30
0.60
0.012
0.024
5º
10º
5º
10º
Marking Diagram
2E
= Device Code
Y
= Year Code
M
= Month Code
(A=Jan,
B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L
= Lot Code
5/7
Version: A07
51单片机
