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U309-10

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-52, HERMETIC SEALED PACKAGE- 3

器件类别:分立半导体    晶体管   

厂商名称:Calogic

厂商官网:http://www.calogic.net/

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器件参数
参数名称
属性值
零件包装代码
TO-52
包装说明
CYLINDRICAL, O-MBCY-W3
针数
3
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
LOW NOISE
配置
SINGLE
FET 技术
JUNCTION
最高频带
ULTRA HIGH FREQUENCY BAND
JEDEC-95代码
TO-52
JESD-30 代码
O-MBCY-W3
元件数量
1
端子数量
3
工作模式
DEPLETION MODE
封装主体材料
METAL
封装形状
ROUND
封装形式
CYLINDRICAL
极性/信道类型
N-CHANNEL
最小功率增益 (Gp)
10 dB
认证状态
Not Qualified
表面贴装
NO
端子形式
WIRE
端子位置
BOTTOM
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
N-Channel JFET
High Frequency Amplifier
LLC
U308 – U310
FEATURES
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise specified)
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Storage Temperature . . . . . . . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +150
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Derate above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . 4mW/
o
C
NOTE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
High Power Gain
Low Noise
Greater The
Dynamic Rangeto 75Ω Input 100dB
Easily Matched
PIN CONFIGURATION
(TO-52)
ORDERING INFORMATION
Part
U308-10
XU308-10
D
S
Package
Hermetic TO-52
Sorted Chips in Carriers
Temperature Range
-55
o
C to +150
o
C
-55
o
C to +150
o
C
G, C
5021
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise specified)
SYMBOL
PARAMETER
U308
U309
U310
UNITS
-150
-150
-25
-4.0
30
1.0
10
250
2.5
5.0
10
10
17
250
2.5
5.0
10
10
17
250
2.5
5.0
nV
Hz
√
-2.5
24
-6.0
60
1.0
mA
V
mS
µS
pF
pA
nA
V
TEST CONDITIONS
V
GS
= -15V
V
GS
= 0
T
A
= 125
o
C
MIN TYP MAX MIN TYP MAX MIN TYP MAX
I
GSS
BV
GSS
V
GS(off)
I
DSS
V
GS(f)
g
fg
g
ogs
C
gd
C
gs
e
n
Gate Reverse Current
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current (Note 1)
Gate-Source Forward Voltage
Common-Gate Forward
Transconductance (Note 1)
Common Gate Output Conductance
Drain-Gate Capacitance
Gate-Source Capacitance
Equivalent Short Circuit
Input Noise Voltage
10
17
-25
-1.0
12
-6.0
60
1.0
-150
-150
-25
-1.0
12
-150
-150
I
G
= -1µA, V
DS
= 0
V
DS
= 10V, I
D
= 1nA
V
DS
= 10V, V
GS
= 0
I
G
= 10mA, V
DS
= 0
V
DS
= 10V,
I
D
= 10mA
V
GS
= -10V,
V
DS
= 10V
V
DS
= 10V,
I
D
= 10mA
f = 1kHz
f = 1MHz
(Note 2)
f = 100Hz
(Note 2)
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX
DS075 REV A
U308 – U310
LLC
ELECTRICAL CHARACTERISTICS
(Continued) (T
A
= 25
o
C unless otherwise specified)
SYMBOL
PARAMETER
Common-Gate Forward
Transconductance
Common-Gate Output
Conductance
Common-Gate Power Gain
14
10
NF
Noise Figure
U308
U309
U310
UNITS
TEST CONDITIONS
f = 100MHz
µS
V
DS
= 10V,
I
D
= 10mA
(Note 2)
f = 450MHz
f = 100MHz
f = 450MHz
f = 100MHz
dB
2.0
3.5
f = 450MHz
f = 100MHz
f = 450MHz
MIN TYP MAX MIN TYP MAX MIN TYP MAX
g
fg
15
14
0.18
0.32
16
11
1.5
2.7
NOTES: 1.
Pulse test duration = 2ms.
2.
For design reference only, not 100% tested.
2.0
3.5
14
10
15
14
0.18
0.32
16
11
1.5
2.7
2.0
3.5
14
10
15
14
0.18
0.32
16
11
1.5
2.7
g
ogs
G
pg
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX
DS075 REV A
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参数对比
与U309-10相近的元器件有:U310-10。描述及对比如下:
型号 U309-10 U310-10
描述 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-52, HERMETIC SEALED PACKAGE- 3 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-52, HERMETIC SEALED PACKAGE- 3
零件包装代码 TO-52 TO-52
包装说明 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
针数 3 3
Reach Compliance Code compliant compliant
ECCN代码 EAR99 EAR99
其他特性 LOW NOISE LOW NOISE
配置 SINGLE SINGLE
FET 技术 JUNCTION JUNCTION
最高频带 ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JEDEC-95代码 TO-52 TO-52
JESD-30 代码 O-MBCY-W3 O-MBCY-W3
元件数量 1 1
端子数量 3 3
工作模式 DEPLETION MODE DEPLETION MODE
封装主体材料 METAL METAL
封装形状 ROUND ROUND
封装形式 CYLINDRICAL CYLINDRICAL
极性/信道类型 N-CHANNEL N-CHANNEL
最小功率增益 (Gp) 10 dB 10 dB
认证状态 Not Qualified Not Qualified
表面贴装 NO NO
端子形式 WIRE WIRE
端子位置 BOTTOM BOTTOM
晶体管应用 AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON
Base Number Matches 1 1
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