U3B-M3, U3C-M3, U3D-M3
www.vishay.com
Vishay General Semiconductor
Surface Mount Ultrafast Plastic Rectifier
FEATURES
• Oxide planar chip junction
• Ultrafast recovery time
• Low forward voltage, low power losses
• High forward surge capability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
DO-214AB (SMC)
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
at I
F
= 3.0 A
T
J
max.
Package
Diode variations
3.0 A
100 V, 150 V, 200 V
100 A
20 ns
0.74 V
150 °C
DO-214AB (SMC)
Single die
For us in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive and telecommunication.
MECHANICAL DATA
Case:
DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
T
M
= 134 °C
T
M
= 125 °C
V
RRM
I
F(AV) (1)
I
F(AV) (2)
I
FSM
T
J
, T
STG
SYMBOL
U3B
U3B
100
U3C
U3C
150
2.0
3.0
100
-55 to +150
U3D
U3D
200
V
A
A
°C
UNIT
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
Notes
(1)
Free air, mounted on recommended copper pad area
(2)
Units mounted on PCB with 0.47" x 0.47" (12 mm x 12 mm) copper pad areas
Revision: 23-Oct-13
Document Number: 89928
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
U3B-M3, U3C-M3, U3D-M3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Instantaneous forward voltage
Reverse current
I
F
= 3.0 A
Rated V
R
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
I
F
= 3.0 A, dI/dt = 50 A/μs,
V
R
= 30 V, I
rr
= 0.1 I
RM
I
F
= 3.0 A, dI/dt = 50 A/μs,
V
R
= 30 V, I
rr
= 0.1 I
RM
4.0 V, 1 MHz
TEST CONDITIONS
T
A
= 25 °C
T
A
= 100 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 25 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 25 °C
T
A
= 100 °C
Q
rr
C
J
t
rr
SYMBOL
V
F (1)
I
R (2)
TYP.
0.85
0.74
-
250
-
25
35
9
22
25
MAX.
0.90
0.83
10
500
20
30
50
15
35
-
nC
pF
ns
UNIT
V
μA
Reverse recovery time
Storage charge
Typical junction capacitance
Notes
(1)
Pulse test: 300 µs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
JA
(1)
U3B
U3C
92
10
U3D
UNIT
°C/W
R
JM
(1)
Note
(1)
Free air, mounted on recommended copper pad area. Thermal resistance R
JA
- junction to ambient, R
JM
- junction to mount
ORDERING INFORMATION
(Example)
PREFERRED P/N
U3D-M3/57T
U3D-M3/9AT
UNIT WEIGHT (g)
0.239
0.239
PREFERRED PACKAGE CODE
57T
9AT
BASE QUANTITY
850
3500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
3.0
3.0
D = 0.5
2.5
D = 0.3
D = 0.2
2.0
D = 0.1
D = 1.0
D = 0.8
Average Forward Rectified Current (A)
2.0
Average Power Loss (W)
1.5
T
1.0
1.0
0.5
D = t
p
/T
t
p
0
80
90
100
110
120
130
140
150
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T
M
- Mount Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Revision: 23-Oct-13
Document Number: 89928
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
U3B-M3, U3C-M3, U3D-M3
www.vishay.com
Vishay General Semiconductor
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
100
Instantaneous Forward Current (A)
10
T
A
= 125 °C
1
T
A
= 100 °C
T
A
= 25 °C
0.1
Junction Capactiance (pF)
10
0.1
T
A
= 150 °C
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
10 000
100
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Leakage
Current (μA)
T
A
= 150 °C
1000
T
A
= 125 °C
T
A
= 100 °C
100
Junction to Ambient
10
10
T
A
= 25 °C
1
1
0.1
10
20
30
40
50
60
70
80
90
100
0.1
0.001
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AB (SMC)
Cathode Band
Mounting Pad Layout
0.185 (4.69) MAX.
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.126 (3.20) MIN.
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
0.060 (1.52) MIN.
0.320 (8.13) REF.
Revision: 23-Oct-13
Document Number: 89928
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Revision: 08-Feb-17
1
Document Number: 91000
