N-Channel JFET
Monolithic Dual
CORPORATION
U443 / U444
FEATURES
DESCRIPTION
The U443 Series is an N-Channel Monolithic Dual JFET
designed for high speed amplifier circuits. Featuring high gain
( > 6 mS typical), low leakage (< 1pA typical) and low noise
this device is an excellent choice for high performance test
and measurement, wideband amplifiers and VHF/UHF
circuits.
ORDERING INFORMATION
Part
Package
Temperature Range
-55
o
C to +150
o
C
-55
o
C to +150
o
C
U443-4 Hermetic M0-002AG (TO-78)
XU443-4 Sorted Chips in Carriers
•
High Gain . . . . . . . . . . . . . . . . . . . . . . . g
fs
> 6 mS typical
•
Low Leakage . . . . . . . . . . . . . . . . . . . . . . I
G
< 1pA typical
•
Low Noise
•
Differential Wideband Amplifiers
•
VHF/UHF Amplifiers
•
Test and Measurement
•
Multi-Chip/Hybrids
APPLICATIONS
PIN CONFIGURATION
TO-78
1
2
3
4
5
6
7
SOURCE 1
DRAIN 1
GATE 1
CASE/BODY
SOURCE 2
DRAIN 2
GATE 2
4 5
3
2
1
6
7
BOTTOM VIEW
C
S2
G1
D2
D1
G2
S1
CJ1
U443 / U444
CORPORATION
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise noted)
Parameter/Test Condition
Gate-Drain Voltage
Gate-Source Voltage
Gate-Gate Voltage
Forward Gate Current
Power Dissipation (per side)
(total)
Power Derating
(per side)
(total)
Operating Junction Temperature
Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
Symbol
V
GD
V
GS
V
GG
I
G
P
D
Limit
-25
-25
±50
50
367
500
3
4
-55 to 150
-65 to 200
300
Unit
V
V
V
mA
mW
mW
mW/
o
C
mW/
o
C
o
C
o
C
o
C
T
J
T
stg
T
L
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise noted)
SYMBOL
STATIC
V
(BR)GSS
V
GS(OFF
)
I
DSS
I
GSS
Gate-Source Breakdown Voltage
Gate-Source Cut off Voltage
Saturation Drain Current
2
Gate Reverse Current
-35
-3.5
15
-1
-2
I
G
V
GS(F)
DYNAMIC
g
fs
g
os
C
iss
C
rss
e
n
MATCHING
| V
GS1
-V
GS2
|
∆
| V
GS1
-V
GS2
|
∆T
I
DSS1
I
DSS2
g
fs1
g
fs2
CMRR
Differential Gate-Source Voltage
Gate-Source Voltage Differential Change with
Temperature
Saturation Drain Current Ratio
Transconductance Ratio
Common Mode Rejection Ratio
6
20
20
0.97
0.97
85
dB
10
20
mV
µV/
C
o
CHARACTERISTCS
TYP
1
U443
MIN
MAX
U444
MIN
MAX
UNIT
TEST CONDITIONS
-25
-1
6
-6
30
-500
-25
-1
6
-6
30
-500
V
mA
pA
nA
I
G
= -1µA, V
DS
= 0V
V
DS
= 10V, I
D
= 1nA
V
DS
= 10V, V
GS
= 0V
V
GS
= -15V, V
DS
= 0V
T
A
= 150
o
C
V
DG
= 10V, I
D
= 5mA
T
A
= 125
o
C
I
G
= 1mA, V
DS
= 0V
Gate Operating Current
Gate-Source Forward Voltage
-1
-0.3
0.7
-500
-500
pA
nA
V
Common-Source Forward Transconductance
Common-Source Output Conductance
Common-Source Input Capacitance
Common-Source Reverse Transfer Capacitance
Equivalent Input Noise Voltage
6
70
3
1
4
4.5
9
200
4.5
9
200
mS
µS
pF
V
DG
= 10V, I
D
= 5mA
f = 1kHz
V
DG
= 10V, I
D
= 5mA
f = 1MHz
V
DG
= 10V, I
D
= 5mA
f = 10kHz
nV/ Hz
V
DG
= 10V, I
D
= 5mA
T = -55 to 25
o
C V
DG
=10V,
T = 25 to 125
o
C I
D
= 5mA
V
DS
= 10V, V
GS
= 0V
V
DG
= 10V, I
D
= 5mA
f= 1 kHz
V
DD
= 5 to 10V, I
D
= 5mA
NOTES: 1. For design aid only, not subject to production testing.
2. Pulse test; PW = 300µs, duty cycle
≤
3%.
RF/无线
