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UFMMT723

Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN

器件类别:分立半导体    晶体管   

厂商名称:Zetex Semiconductors

厂商官网:http://www.zetex.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Zetex Semiconductors
包装说明
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
compliant
ECCN代码
EAR99
最大集电极电流 (IC)
1 A
基于收集器的最大容量
20 pF
集电极-发射极最大电压
100 V
配置
SINGLE
最小直流电流增益 (hFE)
250
JESD-30 代码
R-PDSO-G3
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
极性/信道类型
PNP
功耗环境最大值
0.625 W
认证状态
Not Qualified
表面贴装
YES
端子面层
Matte Tin (Sn)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
40
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
200 MHz
VCEsat-Max
0.33 V
文档预览
SuperSOT
SOT23 PNP SILICON POWER
(SWITCHING) TRANSISTORS
ISSUE 3 JUNE 1996
FEATURES
FMMT717 FMMT718
FMMT720 FMMT722
FMMT723
*
*
*
*
*
*
625mW POWER DISSIPATION
C
B
E
I
C
CONT 2.5A
I
C
Up To 10A Peak Pulse Current
Excellent h
fe
Characteristics Up To 10A (pulsed)
Extremely Low Saturation Voltage E.g. 10mV Typ.
Exhibits extremely low equivalent on-resistance;
R
CE(sat)
DEVICE TYPE
FMMT717
FMMT718
FMMT720
FMMT722
FMMT723
COMPLEMENT
FMMT617
FMMT618
FMMT619
–
FMMT624
PARTMARKING
717
718
720
722
723
R
CE(sat)
72m
at 2.5A
97m
at 1.5A
163m
at 1.5A
-
-
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current**
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C*
Operating and Storage
Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
FMMT
717
-12
-12
-5
-10
-2.5
FMMT
718
-20
-20
-5
-6
-1.5
FMMT
720
-40
-40
-5
-4
-1.5
-500
625
-55 to +150
FMMT
722
-70
-70
-5
-3
-1.5
FMMT
723
-100
-100
-5
-2.5
-1
UNIT
V
V
V
A
A
mA
mW
°C
*Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
2%
Spice parameter data is available upon request for these devices
3 - 159
FMMT718
FMMT720
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
SYMBOL
V
(BR) CBO
V
(BR) CEO
V
(BR)EBO
I
C BO
I
EBO
I
C ES
V
C E( sat)
-16
-130
-145
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
V
BE( sat)
V
BE(on)
h
FE
300
300
150
35
15
Transition
Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
Turn-On Time
Turn-Off Time
f
T
C
ob o
t
(on)
t
(off)
t
(on)
t
(off)
150
-0.87
0.81
475
450
230
70
30
180
21
40
670
40
435
30
FMMT718
MIN.
-20
-20
-5
TYP.
-65
-55
-8.8
-100
-100
-100
-40
-200
-220
-1.0
-1.0
300
300
180
60
12
-40
-40
-5
FMMT720
TYP.
-95
-85
-8.8
MAX.
MAX. MIN.
UNIT CONDITIONS.
V
V
V
nA
nA
nA
nA
nA
mV
mV
mV
mV
mV
V
V
V
V
I
C
=-100µA
I
C
=-10mA*
I
E
=-100µA
V
C B
=-15V
V
C B
=-35V
V
EB
=-4V
V
C ES
=-15V
V
C ES
=-35V
I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=-20mA*
I
C
=-1A, I
B
=-50mA*
I
C
=-1.5A, I
B
=-50mA*
I
C
=-1.5A, I
B
=-100mA*
I
C
=-1.5A, I
B
=-50mA*
I
C
=-1.5A, I
B
=-75mA*
I
C
=-2A, V
C E
=-2V*
I
C
=-1.5A, V
C E
=-2V*
I
C
=-10mA, V
C E
=-2V*
I
C
=-0.1A, V
C E
=-2V*
I
C
=-1A, V
C E
=-2V*
I
C
=-1.5A, V
C E
=-2V*
I
C
=-2A, V
C E
=-2V*
I
C
=-3A, V
C E
=-2V*
I
C
=-4A, V
C E
=-2V*
I
C
=-6A, V
C E
=-2V*
MHz
I
C
=-50mA, V
C E
=-10V
f=100MHz
V
C B
=-10V, f=1MHz
V
C C
=-10V, I
C
=-1A
I
B1
=I
B 2
=-20mA
V
C C
=-15V, I
C
=-0.75A
I
B1
=I
B 2
=-15mA
-100
-100
-100
-25
-150
-245
-0.89
-0.80
480
450
290
130
22
-40
-220
-330
-1.0
-1.0
150
190
19
25
pF
ns
ns
ns
ns
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
2%
3 - 162
FMMT718
TYPICAL CHARACTERISTICS
1
+25°C
0.6
0.5
I
+
/I
*
=30
100m
0.4
0.3
100°C
25°C
-55°C
10m
I
+
/I
*
=50
I
+
/I
*
=30
I
+
/I
*
=10
0.2
0.1
0.0
10
1mA
10mA
1m
1m
10m
100m
1
100mA
1A
10A
I
C
- Collector Current (A)
Collector Current
V
CE(SAT)
v IC
V
CE(SAT)
vs I
C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
100°C
V
+-
=2V
1.4
1.2
450
1.0
0.8
I
+
/I
*
=10
25°C
-55°C
25°C
100°C
-55°C
225
0.6
0.4
0.2
0.0
1mA
10mA
100mA
1A
0
10A
0.0
1mA
10mA
100mA
1A
10A
Collector Current
Collector Current
h
FE
vs I
C
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1mA
10mA
100mA
1A
10A
0.01
0.1
-55°C
25°C
100°C
V
BE(SAT)
vs I
C
10 SINGLE PULSE TEST T
amb
= 25 deg C
V
+-
=2V
1.0
0.1
D.C.
1s
100ms
10ms
1ms
100
µ
s
1.0
10
100
Collector Current
V
CE
(VOLTS)
V
BE(ON)
vs I
C
Safe Operating Area
3 - 163
FMMT617 FMMT624
FMMT618 FMMT625
FMMT619
SuperSOT Series
FMMT717 FMMT722
FMMT718 FMMT723
FMMT720
THERMAL CHARACTERISTICS AND DERATING INFORMATION
DERATING CURVE
MAXIMUM TRANSIENT THERMAL RESISTANCE
* Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate
3 - 158
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参数对比
与UFMMT723相近的元器件有:UFMMT722、UFMMT717、UFMMT718、UFMMT720。描述及对比如下:
型号 UFMMT723 UFMMT722 UFMMT717 UFMMT718 UFMMT720
描述 Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, 1.5A I(C), 70V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, 2.5A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, 1.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
是否Rohs认证 符合 符合 符合 符合 符合
包装说明 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
最大集电极电流 (IC) 1 A 1.5 A 2.5 A 1.5 A 1.5 A
基于收集器的最大容量 20 pF 20 pF 30 pF 30 pF 25 pF
集电极-发射极最大电压 100 V 70 V 12 V 20 V 40 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 250 40 45 15 12
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609代码 e3 e3 e3 e3 e3
湿度敏感等级 1 1 1 1 1
元件数量 1 1 1 1 1
端子数量 3 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 260 260 NOT SPECIFIED 260 260
极性/信道类型 PNP PNP PNP PNP PNP
功耗环境最大值 0.625 W 0.625 W 0.625 W 0.625 W 0.625 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES
端子面层 Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 40 40 NOT SPECIFIED 40 40
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 200 MHz 200 MHz 110 MHz 180 MHz 190 MHz
VCEsat-Max 0.33 V 0.26 V 0.22 V 0.22 V 0.33 V
厂商名称 Zetex Semiconductors Zetex Semiconductors - Zetex Semiconductors Zetex Semiconductors
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