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UH8102_15

LOW POWER HALL EFFECT SWITCH

厂商名称:UNISONIC TECHNOLOGIES CO.,LTD

厂商官网:http://www.unisonic.com.tw/

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UNISONIC TECHNOLOGIES CO., LTD
UH8102
LOW POWER HALL EFFECT
SWITCH
DESCRIPTION
1
CMOS IC
SIP-3
UH8102
is a low-power integrated Hall switch designed to
sense the applied magnetic flux density and give a digital output,
which indicates the present condition of the magnitude sensed.
It mainly designed for battery-powered system and hand-held
equipment, such as cellular flip-phones and PDA’s, in which power
consumption is one major concern. The typical power consumption
of UH8100 at down to 10uW in 2.7V supply.
For
UH8102A,
the output will be at the “Low” level when no
magnetic field is applied. When the applied magnetic flux density
is stronger than the switching threshold, the output would be at the
“High” level.
For
UH8102B,
the output will be at the “High” level when no
magnetic field is applied. When the applied magnetic flux density
is stronger than the switching threshold, the output would be at the
“Low” level.
3
2
1
SOT-23
FEATURES
*Micropower Operation
*2.4V to 5.5V Battery Operation
*Offset Canceling Technology
*Superior Temperature Stability
*Extremely Low Switch-Point Drift
*Insensitive to Physical Stress
ORDERING INFORMATION
Ordering Number
UH8102XG-AE3-R
UH8102XG-G03-B
UH8102XG-G03-K
Pin Assignment: O: Output
I: V
DD
G: GND
Package
SOT-23
SIP-3
SIP-3
Pin Assignment
1
2
3
O
I
G
I
G
O
I
G
O
Packing
Tape Reel
Tape Box
Bulk
Note:
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-414.G
UH8102
MARKING
SOT-23
SIP-3
CMOS IC
PIN CONFIGURATION
SIP-3
SOT-23
PIN DESCRIPTION
PIN NAME
PIN TYPE
PIN DESCRIPTION
V
OUT
O
Digital Output
V
DD
P
Power Supply
GND
G
Ground
Note: O=Output, P=Power Supply, G=Ground
BLOCK DIAGRAM
O f f s et C a n c e l l i n g
L o g i c Co n t r o l
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
A MP
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QW-R502-414.G
UH8102
ABSOLUTE MAXIMUM RATING
SYMBOL
B
V
DD
I
Q
PARAMETER
Magnetic Flux Density
Supply Voltage
Supply current
CMOS IC
RATINGS
UNIT
Unlimited
mT
5.5
V
-1 ~ +2.5
mA
SIP-3
400
mW
Power Dissipation
P
D
SOT-23
200
mW
Junction Temperature
T
J
150
°C
Operation Temperature
T
OPR
-40 ~ +85
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
RECOMMENDED OPERATING CONDITIONS
(
T
A
=25°C
)
SYMBOL
V
DD
V
OUT
T
A
CONDITIONS
Operating
MIN
2.4
-0.3
-40
TYP
2.7
2.7
25
MAX
5.5
5.5
85
UNIT
V
V
°C
PARAMETER
Supply Voltage
Output Voltage
Ambient Temperature
ELECTRICAL CHARACTERISTICS
(T
A
=25°C)
SYMBOL
V
SAT
I
OFF
I
DD(EN)
I
DD(DIS)
I
DD(AVG)
T
OP
T
SD
D.C.
CONDITIONS
V
DD
=2.7V
V
DD
=2.7
V
V
DD
=2.7V
Chip enable
Chip disable
Average supply current
MIN
TYP
0.1
0.01
1.1
2.5
3
60
150
0.04
MAX
UNIT
V
uA
mA
uA
uA
us
ms
%
PARAMETER
Output Saturation Voltage
Output Leakage Current
Supply Current
Operating Time
Standby Time
Duty Cycle
20
MAGNETIC CHARACTERISTICS
( T
A
=25°C,V
DD
=2.7V)
MIN
8
10
10
15
20
10
1
70
10
Gauss
35
40
Gauss
TYP
MAX
23
25
Gauss
UNIT
For UH8102A (LOW level when no magnetic field is applied)
Rank
PARAMETER
SYMBOL
TEST CONDITIONS
South or North pole to branded side,
|B
OP
|
Operation Points
|B| > |B
OP
|, V
OUT
On
South or North pole to branded side,
1
|B
RP
|
Release Points
|B| < |B
RP
|, V
OUT
Off
|B
OP
–B
RP
| |B
OPX
–B
RPX
|
Hysteresis
South or North pole to branded side,
|B
OP
|
Operation Points
|B| > |B
OP
|, V
OUT
On
South or North pole to branded side,
2
|B
RP
|
Release Points
|B| < |B
RP
|, V
OUT
Off
|B
OP
–B
RP
| |B
OPX
–B
RPX
|
Hysteresis
South or North pole to branded side,
|B
OP
|
Operation Points
|B| > |B
OP
|, V
OUT
On
South or North pole to branded side,
3
|B
RP
|
Release Points
|B| < |B
RP
|, V
OUT
Off
|B
OP
–B
RP
| |B
OPX
–B
RPX
|
Hysteresis
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-414.G
UH8102
CMOS IC
MAGNETIC CHARACTERISTICS(Cont.)
MIN
10
8
10
20
15
10
70
1
10
Gauss
40
35
Gauss
TYP
MAX
25
23
Gauss
UNIT
For UH8102B (HIGH level when no magnetic field is applied)
Rank
PARAMETER
SYMBOL
TEST CONDITIONS
South or North pole to branded side,
|B
OP
|
Operation Points
|B| > |B
OP
|, V
OUT
On
South or North pole to branded side,
1
|B
RP
|
Release Points
|B| < |B
RP
|, V
OUT
Off
|B
OP
–B
RP
| |B
OPX
–B
RPX
|
Hysteresis
South or North pole to branded side,
|B
OP
|
Operation Points
|B| > |B
OP
|, V
OUT
On
South or North pole to branded side,
2
|B
RP
|
Release Points
|B| < |B
RP
|, V
OUT
Off
|B
OP
–B
RP
| |B
OPX
–B
RPX
|
Hysteresis
South or North pole to branded side,
|B
OP
|
Operation Points
|B| > |B
OP
|, V
OUT
On
South or North pole to branded side,
3
|B
RP
|
Release Points
|B| < |B
RP
|, V
OUT
Off
|B
OP
–B
RP
| |B
OPX
–B
RPX
|
Hysteresis
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-414.G
UH8102
TYPICAL APPLICATION CIRCUIT
CMOS IC
SIP-3
SOT-23
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-414.G
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参数对比
与UH8102_15相近的元器件有:UH8102XG-AE3-R、UH8102XG-G03-B、UH8102XG-G03-K。描述及对比如下:
型号 UH8102_15 UH8102XG-AE3-R UH8102XG-G03-B UH8102XG-G03-K
描述 LOW POWER HALL EFFECT SWITCH LOW POWER HALL EFFECT SWITCH LOW POWER HALL EFFECT SWITCH LOW POWER HALL EFFECT SWITCH
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