EMX1 / UMX1N / IMX1
Transistors
General purpose transistors
(dual transistors)
EMX1 / UMX1N / IMX1
!
Features
1) Two 2SC2412K chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
!
External dimensions
(Units : mm)
EMX1
0.22
(4)
(5)
(6)
(3)
(2)
1.2
1.6
(1)
0.13
Each lead has same dimensions
ROHM : EMT6
Abbreviated symbol : X1
!
Structure
Epitaxial planar type
NPN silicon transistor
(4)
0.65
1.3
0.65
0.8
1.1
0.95 0.95
1.9
2.9
0.7
0.9
(3)
UMX1N
0.2
0.5
0.5 0.5
1.0
1.6
2.0
(6)
(5)
1.25
2.1
0.15
!
Equivalent circuit
EMX1 / UMX1N
(3)
(2)
(1)
0.1Min.
0to0.1
Each lead has same dimensions
IMX1
(4)
(5)
(6)
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : X1
Tr
1
Tr
2
Tr
2
Tr
1
IMX1
(6)
0.3
(4)
(5)
(6)
(3)
(2)
(1)
(4)
(5)
1.6
2.8
0.3to0.6
0to0.1
The following characteristics apply to both Tr
1
and Tr
2.
0.15
Each lead has same dimensions
ROHM : SMT6
EIAJ : SC-74
!
Absolute maximum ratings
(Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
EMX1, UMX1N
Power
dissipation IMX1
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
60
50
7
150
150 (TOTAL)
300 (TOTAL)
150
−55∼+150
˚C
˚C
Unit
V
V
V
mA
mW
Abbreviated symbol : X1
∗
1
∗
2
∗
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
(3)
(2)
(1)
(1)
(2)
1/3
EMX1 / UMX1N / IMX1
Transistors
!
Electrical characteristics
(Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol Min. Typ. Max. Unit
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE (sat)
h
FE
f
T
Cob
60
50
7
−
−
−
120
−
−
−
−
−
−
−
−
−
180
2
−
−
−
0.1
0.1
0.4
560
−
3.5
V
V
V
µA
µA
V
−
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=60V
V
EB
=7V
I
C
/I
B
=50mA/5mA
V
CE
=6V,
I
C
=1mA
Conditions
MHz V
CE
=12V,
I
E
=−2mA,
f=100MHz
PF
V
CB
=12V,
I
E
=0A,
f=1MHz
∗
!
Packaging specifications
Package
Code
Type
EMX1
UMX1N
IMX1
Basic ordering
unit (pieces)
T2R
8000
Taping
TR
3000
T110
3000
!
Electrical characteristic curves
50
COLLECTOR CURRENT : I
C
(mA)
V
CE
=6V
COLLECTOR CURRENT : I
C
(mA)
100
Ta=25˚C
COLLECTOR CURRENT : I
C
(mA)
20
10
5
80
0.50mA
mA
0.45
A
.40m
0
0.35mA
0.30mA
10
Ta=25˚C
30µA
27µA
8
24µA
21µA
Ta=100˚C
25˚C
−5
5˚C
60
0.25mA
0.20mA
6
18µA
15µA
2
1
0.5
0.2
0.1
0
0.2
40
0.15mA
0.10mA
4
12µA
9µA
20
0.05mA
I
B
=0A
0
0.4
0.8
1.2
1.6
2.0
2
6µA
3µA
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
0
I
B
=0A
4
8
12
16
20
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics ( I )
Fig.3 Grounded emitter output
characteristics ( II )
2/3
EMX1 / UMX1N / IMX1
Transistors
500
500
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(
V)
Ta=25˚C
Ta=100˚C
V
CE
=5V
3V
1V
V
CE
=5V
0.5
Ta=25˚C
DC CURRENT GAIN : h
FE
DC CURRENT GAIN : h
FE
200
200
25˚C
−55˚C
0.2
100
100
0.1
I
C
/I
B
=50
0.05
50
50
20
10
20
20
0.02
0.01
0.2
10
0.2
0.5
1
2
5
10 20
50 100 200
10
0.2
0.5
1
2
5
10 20
50 100 200
0.5
1
2
5
10 20
50 100 200
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs. collector
current ( I )
Fig.5 DC current gain vs. collector
current ( II )
Fig.6 Collector-emitter saturation
voltage vs. collector current
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
0.5
0.5
Ta=25
˚C
I
C
/I
B
=10
0.5
I
C
/I
B
=50
0.2
0.2
0.2
0.1
0.05
0.1
0.05
I
C
/I
B
=50
20
10
0.1
0.05
Ta=100˚C
25˚C
−55˚C
Ta=100˚C
25˚C
−55˚C
0.02
0.02
0.02
0.01
0.2
0.5
1
2
5
10
20
50 100
0.01
0.2
0.5
1
2
5
10
20
50 100 200
0.01
0.2
0.5
1
2
5
10
20
50 100 200
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current ( I )
Fig.8 Collector-emitter saturation
voltage vs. collector current ( II )
Fig.9 Collector-emitter saturation
voltage vs. collector current ( III )
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
EMITTER INPUT CAPACITANCE
: Cib
(pF)
TRANSITION FREQUENCY : f
T
(MHz)
500
Ta=25˚C
V
CE
=6V
20
BASE COLLECTOR TIME CONSTANT : Cc r
bb'
(ps)
10
Cib
Ta=25˚C
f=1MHz
I
E
=0A
I
C
=0A
200
Ta=25
˚C
f=32MH
Z
V
CB
=6V
100
200
5
50
100
2
Co
b
20
50
−0.5
1
0.2
0.5
1
2
5
10
20
50
10
−0.2
−0.5
−1
−2
−5
−10
−1
−2
−5
−10
−20
−50 −100
EMITTER CURRENT : I
E
(mA)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
EMITTER CURRENT : I
E
(mA)
Fig.10 Gain bandwidth product vs.
emitter current
Fig.11 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Fig.12 Base-collector time constant vs.
emitter current
3/3
模拟电子
