Transistors with built-in Resistor
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Silicon PNP epitaxial planer transistor
For digital circuits
0.65±0.15
2.8
–0.3
+0.2
Unit: mm
0.65±0.15
1.5
–0.05
+0.25
s
Features
0.95
q
2
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
Marking Symbol (R
1
)
UN2111
6A
10kΩ
UN2112
6B
22kΩ
UN2113
6C
47kΩ
UN2114
6D
10kΩ
UN2115
6E
10kΩ
UN2116
6F
4.7kΩ
UN2117
6H
22kΩ
UN2118
6I
0.51kΩ
UN2119
6K
1kΩ
UN2110
6L
47kΩ
UN211D
6M
47kΩ
UN211E
6N
47kΩ
UN211F
6O
4.7kΩ
UN211H
6P
2.2kΩ
UN211L
6Q
4.7kΩ
UN211M
EI
2.2kΩ
UN211N
EW
4.7kΩ
UN211T
EY
22kΩ
UN211V
FC
2.2kΩ
UN211Z
FE
4.7kΩ
(R
2
)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
10kΩ
4.7kΩ
47kΩ
47kΩ
47kΩ
2.2kΩ
22kΩ
1.1
–0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC-59
Mini Type Package
Internal Connection
R1
0 to 0.1
0.1 to 0.3
0.4±0.2
0.8
C
B
R2
E
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
–50
–50
–100
200
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
0.16
–0.06
+0.2
+0.1
s
Resistance by Part Number
0.4
–0.05
+0.1
q
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
2.9
–0.05
1
1.9±0.2
+0.2
0.95
3
1.45
1
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
s
Electrical Characteristics
Parameter
Collector cutoff current
UN2111
UN2112/2114/211E/211D/211M/211N/211T
UN2113
Emitter
cutoff
current
UN2115/2116/2117/2110
UN211F/211H
UN2119
UN2118/211L/211V
UN211Z
Collector to base voltage
Collector to emitter voltage
UN2111
UN2112/211E
UN2113/2114/211M
Forward
current
transfer
ratio
UN2115*/2116*/2117*/2110*
UN2119/211F/211D/211H
UN2118/211L
UN211N/211T
UN211V
UN211Z
Collector to emitter saturation voltage
UN211V
Output voltage high level
Output voltage low level
UN2113
UN211D
UN211E
Transition frequency
UN2111/2114/2115
UN2112/2117/211T
Input
resis-
tance
UN2113/2110/211D/211E
(Ta=25˚C)
Symbol
I
CBO
I
CEO
Conditions
V
CB
= –50V, I
E
= 0
V
CE
= –50V, I
B
= 0
min
typ
max
– 0.1
– 0.5
– 0.5
– 0.2
– 0.1
I
EBO
V
EB
= –6V, I
C
= 0
– 0.01
–1.0
–1.5
–2.0
– 0.4
V
CBO
V
CEO
I
C
= –10mA, I
E
= 0
I
C
= –2mA, I
B
= 0
–50
–50
35
60
80
160
h
FE
V
CE
= –10V, I
C
= –5mA
30
20
80
6
60
V
CE(sat)
V
OH
I
C
= –10mA, I
B
= – 0.3mA
I
C
= –10mA, I
B
= –1.5mA
V
CC
= –5V, V
B
= – 0.5V, R
L
= 1kΩ
V
CC
= –5V, V
B
= –2.5V, R
L
= 1kΩ
V
OL
V
CC
= –5V, V
B
= –3.5V, R
L
= 1kΩ
V
CC
= –5V, V
B
= –10V, R
L
= 1kΩ
V
CC
= –5V, V
B
= –6V, R
L
= 1kΩ
f
T
V
CB
= –10V, I
E
= 1mA, f = 200MHz
80
10
22
47
(–30%)
4.7
0.51
1
2.2
(+30%)
kΩ
–4.9
– 0.2
– 0.2
– 0.2
– 0.2
MHz
V
– 0.07
400
20
200
– 0.25
– 0.25
V
V
V
460
V
V
mA
Unit
µA
µA
UN2116/211F/211L/211N/211Z R
1
UN2118
UN2119
UN211H/211M/211V
* h
FE
rank classification (UN2115/2116/2117/2110)
Rank
h
FE
Q
160 to 260
R
210 to 340
S
290 to 460
2
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
s
Electrical Characteristics (continued)
Parameter
UN2111/2112/2113/211L
UN2114
UN2118/2119
UN211D
Resis-
tance
ratio
UN211E
UN211F/211T
UN211H
UN211M
UN211N
UN211V
UN211Z
R
1
/R
2
Symbol
(Ta=25˚C)
Conditions
min
0.8
0.17
0.08
typ
1.0
0.21
0.1
4.7
2.14
0.47
0.17
0.22
0.047
0.1
1.0
0.21
0.27
max
1.2
0.25
0.12
Unit
3
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Common characteristics chart
P
T
— Ta
250
Total power dissipation P
T
(mW)
200
150
100
50
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
Characteristics charts of UN2111
I
C
— V
CE
–160
–140
I
B
=–1.0mA
Ta=25˚C
–100
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
160
V
CE
= –10V
h
FE
— I
C
Ta=75˚C
–30
–10
–3
–1
–0.3
–0.1
–25˚C
–0.03
–0.01
–0.1 –0.3
Ta=75˚C
Collector current I
C
(mA)
–0.9mA
–120
–100
–80
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
–12
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
Forward current transfer ratio h
FE
25˚C
120
–25˚C
80
25˚C
40
–1
–3
–10
–30
–100
0
–1
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
6
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25˚C
V
IN
— I
O
V
O
=–5V
Ta=25˚C
–100
–30
V
O
= –0.2V
Ta=25˚C
–10000
–3000
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
–1000
–300
–100
–30
–10
–3
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.1 –0.3
3
2
1
0
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1
–3
–10
–30
–100
Collector to base voltage
V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
4
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Characteristics charts of UN2112
I
C
— V
CE
–160
–140
Ta=25˚C
I
B
=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–80
–60
–40
–20
0
0
–2
–4
–6
–8
–10
–12
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–100
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
h
FE
— I
C
400
V
CE
= –10V
–30
–10
–3
–1
–0.3
–0.1
–25˚C
–0.03
–0.01
–0.1 –0.3
Forward current transfer ratio h
FE
Collector current I
C
(mA)
–120
–100
300
Ta=75˚C
200
25˚C
–25˚C
100
25˚C
Ta=75˚C
–1
–3
–10
–30
–100
0
–1
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
6
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25˚C
–10000
–3000
V
O
=–5V
Ta=25˚C
V
IN
— I
O
–100
–30
V
O
=–0.2V
Ta=25˚C
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
–1000
–300
–100
–30
–10
–3
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.1 –0.3
3
2
1
0
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1
–3
–10
–30
–100
Collector to base voltage
V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UN2113
I
C
— V
CE
–160
I
B
=–1.0mA
–140
V
CE(sat)
— I
C
–100
h
FE
— I
C
I
C
/I
B
=10
400
V
CE
= –10V
Ta=25˚C
Collector to emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
–120
–100
–80
–60
–40
–20
0
0
–2
–4
–6
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–30
–10
–3
–1
–0.3
–0.1
–25˚C
–0.03
–0.01
–0.1 –0.3
Ta=75˚C
Forward current transfer ratio h
FE
300
Ta=75˚C
25˚C
200
–25˚C
–0.4mA
–0.3mA
–0.2mA
25˚C
100
–0.1mA
–8
–10
–12
–1
–3
–10
–30
–100
0
–1
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
5
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