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UN2216Q

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN

器件类别：分立半导体    晶体管   

厂商名称：Panasonic(松下)

厂商官网：http://www.panasonic.co.jp/semicon/e-index.html

器件标准：

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Panasonic(松下)
零件包装代码
SC-59
包装说明
SMALL OUTLINE, R-PDSO-G3
针数
3
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
BUILT IN BIAS RESISTOR
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
50 V
配置
SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)
160
JESD-30 代码
R-PDSO-G3
元件数量
1
端子数量
3
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度（摄氏度）
NOT SPECIFIED
极性/信道类型
NPN
最大功率耗散 (Abs)
0.2 W
认证状态
Not Qualified
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
150 MHz
文档预览
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR221x Series
(UN221x Series)
Silicon NPN epitaxial planar type
Unit: mm
For digital circuits
■
Features
0.40
+0.10
–0.05
3
1.50
+0.25
–0.05
2.8
+0.2
–0.3
0.16
+0.10
–0.06
M
Di ain
sc te
on na
tin nc
ue e/
d
•
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
•
Mini type package allowing easy automatic insertion through tape
packing and magazine packing
1
2
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
■
Resistance by Part Number
•
UNR2210
•
UNR2211
•
UNR2212
•
UNR2213
•
UNR2214
•
UNR2215
•
UNR2216
•
UNR2217
•
UNR2218
•
UNR2219
•
UNR221D
•
UNR221E
•
UNR221F
•
UNR221K
•
UNR221L
•
UNR221M
•
UNR221N
•
UNR221T
•
UNR221V
•
UNR221Z
M
ai
Collector current
Total power dissipation
Junction temperature
Storage temperature
nt
Collector-emitter voltage (Base open)
en
Collector-base voltage (Emitter open)
an
Parameter
ce
■
Absolute Maximum Ratings
T
a
=
25°C
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
/D
is
co
Marking Symbol (R
1
)
(UN2210)
8L
47 kΩ
(UN2211)
8A
10 kΩ
(UN2212)
8B
22 kΩ
(UN2213)
8C
47 kΩ
(UN2214)
8D
10 kΩ
(UN2215)
8E
10 kΩ
(UN2216)
8F
4.7 kΩ
(UN2217)
8H
22 kΩ
(UN2218)
8I
0.51 kΩ
(UN2219)
8K
1 kΩ
(UN221D)
8M
47 kΩ
(UN221E)
8N
47 kΩ
(UN221F)
8O
4.7 kΩ
(UN221K)
8P
10 kΩ
(UN221L)
8Q
4.7 kΩ
(UN221M) EL
2.2 kΩ
(UN221N)
EX
4.7 kΩ
(UN221T)
EZ
22 kΩ
(UN221V)
FD
2.2 kΩ
(UN221Z)
FF
4.7 kΩ
Pl
e
T
stg
Publication date: May 2005
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ag
at
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io
n.
10˚
(R
2
)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
4.7 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
22 kΩ
1.1
+0.2
–0.1
(0.65)
1.1
+0.3
–0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Internal Connection
R
1
0 to 0.1
B
C
R
2
E
nt
in
ue
Rating
50
50
Unit
V
V
100
200
150
mA
°C
°C
mW
−55
to
+150
Note) The part numbers in the parenthesis show conventional part number.
SJH00010DED
0.4
±0.2
5˚
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR221x Series
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base
UNR2210/2215/2216/2217
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
Conditions
I
C
=
10
µA,
I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
= −6
V, I
C
=
0
Min
50
50
0.1
0.5
0.01
0.1
0.2
0.4
0.5
1.0
1.5
2.0
h
FE
V
CE
=
10 V, I
C
=
5 mA
6
20
30
35
60
60
80
80
160
V
CE(sat)
V
OH
V
OL
I
C
=
10 mA, I
B
=
0.3 mA
I
C
=
10 mA, I
B
=
1.5 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
3.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
10 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
6 V, R
L
=
1 kΩ
f
T
R
1
V
CB
=
10 V, I
E
= −2
mA, f
=
200 MHz
−30%
150
0.51
1.0
2.2
4.7
10
22
47
+30%
MHz
kΩ
4.9
0.2
V
V
400
460
0.25
V
200
20
Typ
Max
Unit
V
V
µA
µA
mA
cutoff current UNR2213
(Collector open) UNR2212/2214/221D/
221E/221M/221N/221T
UNR221Z
UNR2211
UNR221F/221K
UNR2219
UNR2218/221L/221V
Forward current UNR221V
transfer ratio
UNR2218/221K/221L
UNR2219/221D/221F
UNR2211
UNR2212/221E
UNR221Z
UNR2213/2214/221M
UNR221N/221T
UNR2210
*
/2215
*
/2216
*
/2217
*
Collector-emitter saturation voltage
UNR221V
Output voltage high-level
Output voltage low-level
UNR2213/221K
UNR221D
UNR221E
Transition frequency
Input resistance
UNR2218
UNR2219
UNR221M/211V
UNR2216/221F/221L/
221N/221Z
UNR2211/2214/2215/221K
UNR2212/2217/221T
UNR2210/2213/221D/221E
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
160 to 260
R
210 to 340
S
290 to 460
No-rank
160 to 460
2
SJH00010DED
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR221x Series
■
Electrical Characteristics (continued)
T
a
=
25°C
±
3°C
Parameter
Resistance ratio UNR221M
UNR221N
UNR2218/2219
UNR221Z
UNR2214
UNR221T
UNR221F
UNR221V
UNR2211/2212/2213/221L
UNR221K
UNR221E
UNR221D
0.8
1.70
1.70
3.7
0.37
0.17
0.08
Symbol
R
1
/R
2
Conditions
Min
Typ
0.047
0.1
0.10
0.21
0.21
0.47
0.47
1.0
1.0
2.13
2.14
4.7
1.2
2.60
2.60
5.7
0.57
0.25
0.12
Max
Unit
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
P
T
T
a
250
Total power dissipation P
T
(mW)
200
150
100
50
0
0
40
80
120
160
Ambient temperature T
a
(
°C
)
Characteristics charts of UNR2210
I
C
V
CE
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
100
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
=
10 V
60
I
B
=
1.0 mA
0.9 mA
0.8 mA
Forward current transfer ratio h
FE
50
Collector current I
C
(mA)
10
300
T
a
=
75°C
25°C
200
−25°C
100
40
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.1 mA
30
0.3 mA
1
T
a
=
75°C
25°C
0.1
−25°C
0.01
0.1
20
10
0
0
1
10
100
0
2
4
6
8
10
12
1
10
100
1 000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00010DED
3
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR221x Series
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
10
4
V
O
=
5 V
T
a
=
25°C
100
V
IN
I
O
V
O
=
0.2 V
T
a
=
25°C
5
Output current I
O
(µA)
4
3
10
2
Input voltage V
IN
(V)
10
3
10
1
2
10
0.1
1
0
0.1
1
10
100
1
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1
10
100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UNR2211
I
C
V
CE
I
B
=
1.0 mA
0.9 mA
0.8 mA
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
100
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
=
10 V
160
Collector current I
C
(mA)
120
0.7 mA
0.6 mA
0.5 mA
0.4 mA
10
Forward current transfer ratio h
FE
300
T
a
=
75°C
80
0.3 mA
1
25°C
0.1
−25˚C
200
25°C
100
−25°C
0.2 mA
40
T
a
=
75°C
0.1 mA
0
0
2
4
6
8
10
12
0.01
0.1
1
10
100
0
1
10
100
1 000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
10
4
V
IN
I
O
V
O
=
5 V
T
a
=
25°C
100
V
O
=
0.2 V
T
a
=
25°C
5
Output current I
O
(µA)
4
Input voltage V
IN
(V)
10
3
10
3
10
2
1
2
10
0.1
1
0
0.1
1
10
100
1
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1
10
100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
4
SJH00010DED
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR221x Series
Characteristics charts of UNR2212
I
C
V
CE
T
a
=
25°C
I
B
=
1.0 mA
0.9 mA
0.8 mA
120
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
100
I
C
/ I
B
=
10
400
h
FE
I
C
V
CE
=
10 V
160
Collector current I
C
(mA)
0.7 mA
0.6 mA
0.5 mA
0.4 mA
10
Forward current transfer ratio h
FE
300
T
a
=
75°C
80
0.3 mA
1
T
a
=
75°C
200
25°C
−25°C
25°C
0.1
−25°C
40
0.2 mA
100
0.1 mA
0
0
2
4
6
8
10
12
0.01
0.1
1
10
100
0
1
10
100
1 000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
10
4
V
IN
I
O
V
O
=
5 V
T
a
=
25°C
100
V
O
=
0.2 V
T
a
=
25°C
5
Output current I
O
(µA)
4
3
10
2
Input voltage V
IN
(V)
0.6
0.8
1.0
1.2
1.4
10
3
10
1
2
10
0.1
1
0
0.1
1
10
100
1
0.4
0.01
0.1
1
10
100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UNR2213
I
C
V
CE
T
a
=
25°C
I
B
=
1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
80
0.3 mA
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
100
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
=
10 V
160
Forward current transfer ratio h
FE
Collector current I
C
(mA)
120
10
300
T
a
=
75°C
25°C
−25°C
1
200
40
0.2 mA
25°C
0.1
−25°C
0.01
0.1
T
a
=
75°C
100
0.1 mA
0
0
2
4
6
8
10
12
1
10
100
0
1
10
100
1 000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00010DED
5
查看更多>
参数对比
与UN2216Q相近的元器件有：UN2210S、UN2210Q、UN2215Q、UN2215R、UN2210R、UN2216R、UN2215S、UN2216S。描述及对比如下：
型号 UN2216Q UN2210S UN2210Q UN2215Q UN2215R UN2210R UN2216R UN2215S UN2216S
描述 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合 符合
零件包装代码 SC-59 SC-59 SC-59 SC-59 SC-59 SC-59 SC-59 SC-59 SC-59
包装说明 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
针数 3 3 3 3 3 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V
配置 SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 160 290 160 160 210 210 210 290 290
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
元件数量 1 1 1 1 1 1 1 1 1
端子数量 3 3 3 3 3 3 3 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性/信道类型 NPN NPN NPN NPN NPN NPN NPN NPN NPN
最大功率耗散 (Abs) 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz
厂商名称 Panasonic(松下) - Panasonic(松下) Panasonic(松下) Panasonic(松下) Panasonic(松下) Panasonic(松下) Panasonic(松下) Panasonic(松下)
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