Transistors with built-in Resistor
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Silicon PNP epitaxial planer transistor
For digital circuits
2.1±0.1
Unit: mm
s
Features
0.65
0.425
1.25±0.1
0.425
1
2.0±0.2
1.3±0.1
0.65
q
3
2
0.9±0.1
0 to 0.1
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
Marking Symbol
UN5111
6A
UN5112
6B
UN5113
6C
UN5114
6D
UN5115
6E
UN5116
6F
UN5117
6H
UN5118
6I
UN5119
6K
UN5110
6L
UN511D
6M
UN511E
6N
UN511F
6O
UN511H
6P
UN511L
6Q
UN511M
EI
UN511N
EW
UN511T
EY
UN511V
FC
UN511Z
FE
(R
1
)
10kΩ
22kΩ
47kΩ
10kΩ
10kΩ
4.7kΩ
22kΩ
0.51Ω
1kΩ
47kΩ
47kΩ
47kΩ
4.7kΩ
2.2kΩ
4.7kΩ
2.2kΩ
4.7kΩ
22kΩ
2.2kΩ
4.7kΩ
(R
2
)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
10kΩ
4.7kΩ
47kΩ
47kΩ
47kΩ
2.2kΩ
22kΩ
0.7±0.1
0.2±0.1
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC–70
S–Mini Type Package
Internal Connection
R1
C
B
R2
E
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
–50
–50
–100
150
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
0.15
-0.05
+0.1
s
Resistance by Part Number
0.2
0.3
-0
q
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
S-Mini type package, allowing automatic insertion through tape
packing and magazine packing.
+0.1
1
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
s
Electrical Characteristics
Parameter
Collector cutoff current
UN5111
UN5112/5114/511E/511D/511M/511N/511T
UN5113
Emitter
cutoff
current
UN5115/5116/5117/5110
UN511F/511H
UN5119
UN5118/511L/511V
UN511Z
Collector to base voltage
UN511N/511T/511V/511Z
Collector to emitter voltage
UN511N/511T
UN5111
UN5112/511E
UN5113/5114/511M
Forward
current
transfer
ratio
UN5115*/5116*/5117*/5110*
UN511F/511D/5119/511H
UN5118/511L
UN511N/511T
UN511V
UN511Z
Collector to emitter saturation voltage
UN511V
Output voltage high level
Output voltage low level
UN5113
UN511D
UN511E
Transition frequency
UN511Z
UN5111/5114/5115
UN5112/5117/511T
UN5113/5110/511D/511E
Input
resis-
tance
UN5116/511F/511L/511N/511Z
UN5118
UN5119
UN511H/511M/511V
(Ta=25˚C)
Symbol
I
CBO
I
CEO
Conditions
V
CB
= –50V, I
E
= 0
V
CE
= –50V, I
B
= 0
min
typ
max
– 0.1
– 0.5
– 0.5
– 0.2
– 0.1
I
EBO
V
EB
= –6V, I
C
= 0
– 0.01
–1.0
–1.5
–2.0
– 0.4
V
CBO
V
CEO
I
C
= –10µA, I
E
= 0
I
C
= –2mA, I
B
= 0
–50
–50
–50
–50
35
60
80
160
h
FE
V
CE
= –10V, I
C
= –5mA
30
20
80
6
60
V
CE(sat)
V
OH
I
C
= –10mA, I
B
= – 0.3mA
I
C
= –10mA, I
B
= –1.5mA
V
CC
= –5V, V
B
= – 0.5V, R
L
= 1kΩ
V
CC
= –5V, V
B
= –2.5V, R
L
= 1kΩ
V
OL
V
CC
= –5V, V
B
= –3.5V, R
L
= 1kΩ
V
CC
= –5V, V
B
= –10V, R
L
= 1kΩ
V
CC
= –5V, V
B
= –6V, R
L
= 1kΩ
f
T
V
CB
= –10V, I
E
= 1mA, f = 200MHz
V
CB
= –10V, I
E
= 1mA, f = 200MHz
80
150
10
22
47
R
1
(–30%)
4.7
0.51
1
2.2
(+30%)
kΩ
–4.9
– 0.2
– 0.2
– 0.2
– 0.2
MHz
V
400
20
200
– 0.25
– 0.25
V
V
460
V
mA
Unit
µA
µA
V
* h
FE
rank classification (UN5115/5116/5117/5110)
Rank
h
FE
Q
160 to 260
R
210 to 340
S
290 to 460
2
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
s
Electrical Characteristics (continued)
Parameter
UN5111/5112/5113/511L
UN5114
UN5118/5119
UN511D
Resis-
tance
ratio
UN511E
UN511F/511T
UN511H
UN511M
UN511N
UN511V
UN511Z
R
1
/R
2
Symbol
(Ta=25˚C)
Conditions
min
0.8
0.17
0.08
typ
1.0
0.21
0.1
4.7
2.14
0.47
0.17
0.22
0.047
0.1
1.0
0.21
0.27
max
1.2
0.25
0.12
Unit
3
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Common characteristics chart
P
T
— Ta
240
Total power dissipation P
T
(mW)
200
160
120
80
40
0
0
40
80
120
160
Ambient temperature Ta (˚C)
Characteristics charts of UN5111
I
C
— V
CE
–160
–140
I
B
=–1.0mA
Ta=25˚C
–100
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
160
V
CE
= –10V
h
FE
— I
C
Ta=75˚C
–30
–10
–3
–1
–0.3
–0.1
–25˚C
–0.03
–0.01
–0.1 –0.3
Ta=75˚C
Collector current I
C
(mA)
–0.9mA
–120
–100
–80
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
–12
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
Forward current transfer ratio h
FE
25˚C
120
–25˚C
80
25˚C
40
–1
–3
–10
–30
–100
0
–1
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
6
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25˚C
V
IN
— I
O
V
O
=–5V
Ta=25˚C
–100
–30
V
O
= –0.2V
Ta=25˚C
–10000
–3000
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
–1000
–300
–100
–30
–10
–3
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.1 –0.3
3
2
1
0
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1
–3
–10
–30
–100
Collector to base voltage
V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
4
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Characteristics charts of UN5112
I
C
— V
CE
–160
–140
Ta=25˚C
I
B
=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–80
–60
–40
–20
0
0
–2
–4
–6
–8
–10
–12
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–100
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
h
FE
— I
C
400
V
CE
= –10V
–30
–10
–3
–1
–0.3
–0.1
–25˚C
–0.03
–0.01
–0.1 –0.3
Forward current transfer ratio h
FE
Collector current I
C
(mA)
–120
–100
300
Ta=75˚C
200
25˚C
–25˚C
100
25˚C
Ta=75˚C
–1
–3
–10
–30
–100
0
–1
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
6
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25˚C
–10000
–3000
V
O
=–5V
Ta=25˚C
V
IN
— I
O
–100
–30
V
O
=–0.2V
Ta=25˚C
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
–1000
–300
–100
–30
–10
–3
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.1 –0.3
3
2
1
0
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1
–3
–10
–30
–100
Collector to base voltage
V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UN5113
I
C
— V
CE
–160
I
B
=–1.0mA
–140
V
CE(sat)
— I
C
–100
h
FE
— I
C
I
C
/I
B
=10
400
V
CE
= –10V
Ta=25˚C
Collector to emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
–120
–100
–80
–60
–40
–20
0
0
–2
–4
–6
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–30
–10
–3
–1
–0.3
–0.1
–25˚C
–0.03
–0.01
–0.1 –0.3
Ta=75˚C
Forward current transfer ratio h
FE
300
Ta=75˚C
25˚C
200
–25˚C
–0.4mA
–0.3mA
–0.2mA
25˚C
100
–0.1mA
–8
–10
–12
–1
–3
–10
–30
–100
0
–1
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
5
