This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR211x Series
(UN211x Series)
Silicon PNP epitaxial planar type
Unit: mm
For digital circuits
■
Features
0.40
+0.10
–0.05
3
1.50
+0.25
–0.05
2.8
+0.2
–0.3
0.16
+0.10
–0.06
M
ain
Di
sc te
on na
tin nc
ue e/
d
•
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
•
Mini type package allowing easy automatic insertion through tape
packing and magazine packing
1
2
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
■
Resistance by Part Number
•
UNR2110
•
UNR2111
•
UNR2112
•
UNR2113
•
UNR2114
•
UNR2115
•
UNR2116
•
UNR2117
•
UNR2118
•
UNR2119
•
UNR211D
•
UNR211E
•
UNR211F
•
UNR211H
•
UNR211L
•
UNR211M
•
UNR211N
•
UNR211T
•
UNR211V
•
UNR211Z
Ma
int
en
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
an
ce
Marking Symbol (R
1
)
(UN2110)
6L
47 kΩ
(UN2111)
6A
10 kΩ
(UN2112)
6B
22 kΩ
(UN2113)
6C
47 kΩ
(UN2114)
6D
10 kΩ
(UN2115)
6E
10 kΩ
(UN2116)
6F
4.7 kΩ
(UN2117)
6H
22 kΩ
(UN2118)
6I
0.51 kΩ
(UN2119)
6K
1 kΩ
(UN211D)
6M
47 kΩ
(UN211E)
6N
47 kΩ
(UN211F)
6O
4.7 kΩ
(UN211H)
6P
2.2 kΩ
(UN211L)
6Q
4.7 kΩ
(UN211M) EI
2.2 kΩ
(UN211N)
EW
4.7 kΩ
(UN211T)
EY
22 kΩ
(UN211V)
FC
2.2 kΩ
(UN211Z)
FE
4.7 kΩ
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.
10˚
(R
2
)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
22 kΩ
1.1
+0.2
–0.1
(0.65)
1.1
+0.3
–0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Internal Connection
R
1
0 to 0.1
B
C
R
2
E
/D
isc
on
tin
ue
Rating
−50
−50
200
150
Unit
V
V
−100
mA
°C
°C
mW
−55
to
+150
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00006CED
0.4
±0.2
5˚
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR211x Series
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base
UNR2110/2115/2116/2117
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
Conditions
I
C
= −10 µA,
I
E
=
0
I
C
= −2
mA, I
B
=
0
V
CB
= −50
V, I
E
=
0
V
CE
= −50
V, I
B
=
0
V
EB
= −6
V, I
C
=
0
Min
−50
−50
−
0.1
−
0.5
−
0.01
−
0.1
−
0.2
−
0.4
−
0.5
−1.0
−1.5
−2.0
20
Typ
Max
Unit
V
V
µA
µA
mA
UNR211F/211H
UNR2119
UNR2118/211L/211V
Forward current UNR211V
transfer ratio
h
FE
UNR2118/211L
UNR2119/211D/211F/211H
UNR2111
UNUNR2112/211E
UNR211Z
UNR2113/2114/211M
UNR211N/211T
UNR2110
*
/2115
*
/2116
*
/2117
*
Collector-emitter saturation voltage
UNR211V
V
CE(sat)
V
OH
V
OL
ue
Output voltage high-level
Output voltage low-level
on
UNR2113
UNR211D
UNR211E
an
Transition frequency
f
T
Ma
int
en
UNR2114/2119/211E
211F/211H
UNR2118
UNR2119
UNR211H/211M/211V
UNR2116/211F/211L/211N/211Z
UNR2111/2114/2115
UNR2112/2117/211T
UNR2110/2113/211D/211E
Input resistance
R
1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
160 to 260
R
210 to 340
S
290 to 460
No-rank
160 to 460
2
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ct
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cy
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co fo
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/ ion
.
V
CE
= −10
V, I
C
= −5
mA
6
20
30
35
60
60
200
80
80
400
160
460
I
C
= −10
mA, I
B
= −
0.3 mA
I
C
= −10
mA, I
B
= −1.5
mA
−
0.25
V
V
CC
= −5
V, V
B
= −
0.5 V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −2.5
V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −3.5
V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −10
V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −6
V, R
L
=
1 kΩ
−4.9
V
−
0.2
V
V
CB
= −10
V, I
E
=
1 mA, f
=
200 MHz
80
MHz
V
CB
= −10
V, I
E
=
2 mA, f
=
200 MHz
150
−30%
0.51
1.0
2.2
+30%
kΩ
4.7
10
22
47
SJH00006CED
ce
M
ain
Di
sc te
on na
tin nc
ue e/
d
cutoff current UNR2113
(Collector open) UNR2112/2114/211D/
211E/211M/211N/211T
UNR211Z
UNR2111
/D
isc
tin
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR211x Series
■
Electrical Characteristics (continued)
T
a
=
25°C
±
3°C
Parameter
Resistance ratio UNR211M
UNR211N
UNR2118/2119
UNR211Z
UNR2114
UNR211H
UNR211T
UNR211F
0.17
0.17
0.08
Symbol
R
1
/R
2
Conditions
Min
Typ
0.047
0.1
0.10
0.21
0.21
0.22
0.47
0.47
1.0
1.0
1.2
0.57
0.25
0.27
0.12
Max
Unit
UNR2111/2112/2113/211L
UNR211E
UNR211D
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
P
T
T
a
250
200
150
100
50
0
40
80
120
160
Ambient temperature T
a
(°C)
−10
Forward current transfer ratio h
FE
Collector current I
C
(mA)
T
a
=
25°C
I
B
= −1.0
mA
−
0.9 mA
−100
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−80
−
0.4 mA
−
0.3 mA
−60
−
0.2 mA
−
0.1 mA
−20
Collector-emitter saturation voltage V
CE(sat)
(V)
−120
Ma
int
en
I
C
V
CE
an
Characteristics charts of UNR2110
ce
/D
isc
on
0
−40
0
0
−2
−4
−6
−8
−10
−12
−
0.01
−0.1
Collector-emitter voltage V
CE
(V)
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ct
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cy
on es
cle
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co fo
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.
0.8
1.70
3.7
2.14
4.7
2.60
5.7
M
ain
Di
sc te
on na
tin nc
ue e/
d
0.37
UNR211V
Total power dissipation P
T
(mW)
tin
ue
V
CE(sat)
I
C
h
FE
I
C
−100
I
C
/ I
B
=
10
400
V
CE
=
–10 V
300
T
a
=
75°C
−1
T
a
=
75°C
25°C
−
0.1
−25°C
200
25°C
−25°C
100
−1
−10
−100
0
−1
−10
−100
−1
000
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00006CED
3
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR211x Series
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
−10
4
V
O
= −5
V
T
a
=
25°C
−100
V
IN
I
O
V
O
= −
0.2 V
T
a
= 25°C
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
−10
3
−10
3
−10
2
−1
0
−
0.1
−1
−10
−100
Collector-base voltage V
CB
(V)
Characteristics charts of UNR2111
I
C
V
CE
I
B
= −1.0
mA
−160
T
a
=
25°C
−
0.9 mA
Collector current I
C
(mA)
−120
−
0.8 mA
−
0.7 mA
−
0.6 mA
−80
−
0.5 mA
−
0.4 mA
−
0.3 mA
−40
−
0.2 mA
ue
−
0.1 mA
−10
0
tin
0
−2
−4
−6
−8
−12
−
0.01
−
0.1
Collector-emitter voltage V
CE
(V)
ce
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
5
Ma
int
en
f
=
1 MHz
I
E
=
0
T
a
=
25°C
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
3
2
1
−
0.01
−
0.1
0
−
0.1
−1
−10
−100
Collector-base voltage V
CB
(V)
4
d
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Pl
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.
−1
−
0.4
−
0.6
−
0.8
−1.0
−1.2
−1.4
−
0.01
−
0.1
−1
−10
M
ain
Di
sc te
on na
tin nc
ue e/
d
2
−10
−
0.1
1
−100
Input voltage V
IN
(V)
Output current I
O
(mA)
V
CE(sat)
I
C
h
FE
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
160
V
CE
= −10
V
T
a
=
75°C
Forward current transfer ratio h
FE
−10
25°C
120
−25°C
−1
80
25°C
T
a
=
75°C
−
0.1
40
−25°C
−1
−10
−100
0
−1
−10
−100
−1
000
/D
isc
on
Collector current I
C
(mA)
Collector current I
C
(mA)
I
O
V
IN
V
IN
I
O
an
−10
4
V
O
= −5
V
T
a
=
25°C
−100
V
O
= −
0.2 V
T
a
=
25°C
−10
3
−10
−10
2
−1
−10
−
0.1
−1
−
0.4
−
0.6
−
0.8
−1.0
−1.2
−1.4
−1
−10
−100
Input voltage V
IN
(V)
Output current I
O
(mA)
SJH00006CED
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR211x Series
Characteristics charts of UNR2112
I
C
V
CE
I
B
= −1.0
mA
−
0.9mA
−
0.8mA
−
0.7mA
−
0.6mA
−
0.5mA
−80
−
0.4mA
−
0.3mA
−
0.2mA
−
0.1mA
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
= −10
V
−160
Collector current I
C
(mA)
−120
−10
Forward current transfer ratio h
FE
300
M
ain
Di
sc te
on na
tin nc
ue e/
d
200
25°C
T
a
= 75°C
−1
T
a
= 75°C
25°C
−25°C
−40
−
0.1
100
−25°C
0
0
−2
−4
−6
−8
−10
−12
−
0.01
−
0.1
Collector-emitter voltage V
CE
(V)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
5
f
=
1 MHz
I
E
=
0
T
a
=
25°C
4
3
2
1
−1
−10
−100
ue
0
−
0.1
I
B
= −1.0
mA
T
a
=
25°C
Collector-emitter saturation voltage V
CE(sat)
(V)
−160
Ma
int
en
an
I
C
V
CE
ce
Characteristics charts of UNR2113
/D
isc
on
Collector-base voltage V
CB
(V)
Forward current transfer ratio h
FE
Collector current I
C
(mA)
−120
−
0.9 mA
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−80
−
0.4 mA
−
0.3 mA
−40
−
0.2 mA
−
0.1 mA
0
0
−2
−4
−6
−8
−10
−12
−
0.01
−
0.1
Collector-emitter voltage V
CE
(V)
d
pla inc
Pl
ea
ne lud
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pla m d m es
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co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
−1
−10
−100
0
−1
−10
−100
−1
000
Collector current I
C
(mA)
Collector current I
C
(mA)
I
O
V
IN
V
IN
I
O
−10
4
V
O
=
−5
V
T
a
= 25°C
−100
V
O
= −
0.2 V
T
a
= 25°C
Output current I
O
(µA)
Input voltage V
IN
(V)
−10
3
−10
−10
2
−1
−10
−
0.1
−1
−
0.4
−
0.6
−
0.8
−1.0
−1.2
−1.4
−
0.01
−
0.1
−1
−10
−100
tin
Input voltage V
IN
(V)
Output current I
O
(mA)
V
CE(sat)
I
C
h
FE
I
C
−100
I
C
/ I
B
=
10
400
V
CE
= −10
V
T
a
=
75°C
−10
300
25°C
−1
T
a
=
75°C
200
−25°C
25°C
−
0.1
−25°C
100
−1
−10
−100
0
−1
−10
−100
−1
000
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00006CED
5
