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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1914
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA1914 is a switching device which can be driven
directly by a 4 V power source.
The
µ
PA1914 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
PACKAGE DRAWING (Unit : mm)
0.32
+0.1
–0.05
0.65
–0.15
+0.1
0.16
+0.1
–0.06
2.8 ±0.2
6
5
4
1.5
0 to 0.1
1
2
3
FEATURES
•
Can be driven by a 4 V power source
•
Low on-state resistance
R
DS(on)1
= 57 mΩ MAX. (V
GS
= –10 V, I
D
= –2.5 A)
R
DS(on)2
= 86 mΩ MAX. (V
GS
= –4.5 V, I
D
= –2.5 A)
R
DS(on)3
= 96 mΩ MAX. (V
GS
= –4.0 V, I
D
= –2.5A)
0.95
0.95
0.65
0.9 to 1.1
1.9
2.9 ±0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
SC-95 (Mini Mold Thin Type)
1, 2, 5, 6 : Drain
3
: Gate
4
: Source
µ
PA1914TE
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
Note2
–30
±20
±4.5
±18
0.2
2
150
–55 to +150
V
V
A
A
W
W
°C
°C
Gate
Gate
Protection
Diode
Marking: TF
Body
Diode
Source
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1 %
2.
Mounted on FR-4 Board, t
≤
5 sec.
Remark
P
T2
T
ch
T
stg
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13810EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The mark
!
shows major revised points.
©
1998, 1999
µ
PA1914
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
TEST CONDITIONS
V
DS
= –30 V, V
GS
= 0 V
V
GS
= ±16 V, V
DS
= 0 V
V
DS
= –10 V, I
D
= –1 mA
V
DS
= –10 V, I
D
= –2.5 A
V
GS
= –10 V, I
D
= –2.5 A
V
GS
= –4.5 V, I
D
= –2.5 A
V
GS
= –4.0 V, I
D
= –2.5 A
V
DS
= –10 V
V
GS
= 0 V
f = 1 MHz
V
DS
= –25 V
V
GS
= 0 V
f = 1 MHz
V
DD
= –15 V
I
D
= –2.5 A
V
GS(on)
= –10 V
R
G
= 10
Ω
V
DD
= –24 V
I
D
= –4.5 A
V
GS
= –10 V
I
F
= 4.5 A, V
GS
= 0 V
I
F
= 4.5 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
–1.0
1
–1.6
7.1
43
58
64
589
210
86
546
148
65
16
57
63
80
11
1.5
2.8
0.88
22
11
57
86
96
MIN.
TYP.
MAX.
–10
±10
–2.5
UNIT
µ
A
µ
A
V
S
mΩ
mΩ
mΩ
pF
pF
pF
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
R
L
PG.
R
G
R
G
= 10
Ω
V
DD
I
D
90 %
90 %
I
D
0 10 %
t
d(on)
t
on
t
r
t
d(off)
t
off
10 %
t
f
V
GS
I
G
= 2 mA
V
GS(on)
90 %
V
GS
Wave Form
R
L
V
DD
0
10 %
PG.
50
Ω
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1 %
I
D
Wave Form
2
Data Sheet D13810EJ2V0DS
µ
PA1914
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
!
−100
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drain Current - A
dT - Derating Factor - %
80
−10
R
(o
DS
d
ite
Lim
n)
I
D
(pulse)
PW
PW
PW
=1
0
=1
I
D
(
DC
)
PW
ms
60
−1
ms
=1
00
ms
=5
s
40
−0.1
20
Single Pulse
Mounted on 250mm
2
x 35µm Copper Pad
Connected to Drain Electrode in
50mm x 50mm x 1.6mm FR-4 Board
0
30
60
120
90
T
A
- Ambient Temperature -
˚C
150
−0.01
−0.1
−1
−10
−100
V
DS
- Drain to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
−20
−16
−12
−8
−4
V
GS
=
−20
V
V
GS
=
−10
V
V
GS
=
−4.5
V
I
D
- Drain Current - A
TRANSFER CHARACTERISTICS
−100
−10
−1
−0.1
−0.01
−0.001
T
A
= 125˚C
T
A
= 75˚C
T
A
= 25˚C
T
A
=
−
25˚C
V
DS =
−10
V
I
D
- Drain Current - A
V
GS
=
−4.0
V
−0.0001
−0.00001
−0.5
−1.0
−1.5
−2.0
−2.5
−3.0
−3.5
−4.0
0
0.0
−0.2
−0.4
−0.6
−0.8
−1.0
V
DS
- Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
DS
=
−10
V
I
D
=
−
1 mA
| y
fs
| - Forward Transfer Admittance - S
V
GS
- Gate to Sorce Voltage - V
FORWARD TRANSFER ADMITTANCE Vs.
DRAIN CURRENT
100
V
DS
=
−10V
T
A
=
−25
˚C
T
A
= 25
˚C
T
A
= 75
˚C
1
T
A
= 125
˚C
V
GS(off)
- Gate to Source Cut-off Voltage - V
−2.0
10
−1.5
0.1
−1.0
−50
0
50
100
150
0.01
−0.01
−0.1
−1
I
D
- Drain Current - A
−10
−100
T
ch
- Channel Temperature - ˚C
Data Sheet D13810EJ2V0DS
3
