SILICON RFIC LOW
CURRENT AMPLIFIER UPC8179TB
FOR MOBILE COMMUNICATIONS
POWER GAIN vs. FREQUENCY
+20
V
CC
= 3.0 V
+10
T
A
= -40°C
T
A
= +25°C
T
A
= +85°C
• HIGH DENSITY SURFACE MOUNTING:
6 Pin Super Minimold Package (2.0 x 1.25 x 0.9 mm)
• SUPPLY VOLTAGE:
V
CC
= 2.4 to 3.3 V
• HIGH EFFICIENCY:
P
O
(1dB) = +3.0 dBm TYP at f = 1.0 GHz
P
O
(1dB) = +1.5 dBm TYP at f = 1.9 GHz
P
O
(1dB) = +1.0 dBm TYP at f = 2.4 GHz
• POWER GAIN:
G
P
= 13.5 dB TYP at f = 1.0 GHz
G
P
= 15.5 dB TYP at f = 1.9 GHz
G
P
= 15.5 dB TYP at f = 2.4 GHz
• EXCELLENT ISOLATION:
ISL = 44 dB TYP at f = 1.0 GHz
ISL = 42 dB TYP at f = 1.9 GHz
ISL = 41 dB TYP at f = 2.4 GHz
NT
IN
–40
0.1
• LOW CURRENT CONSUMPTION:
I
CC
= 4.0 mA TYP AT VCC = 3.0 V
• OPERATING FREQUENCY:
I
CC
= 4.0 mA TYP AT VCC = 3.0 V
• LIGHT WEIGHT:
7 mg (standard Value)
DESCRIPTION
APPLICATIOIN
ELECTRICAL CHARACTERISTICS,
(Unless otherwise specified, T
A
= +25°C, V
CC
= V
OUT
= 3.0 V, Z
S
= Z
L
= 50Ω, at LC matched Frequency)
PART NUMBER
PACKAGE OUTLINE
UPC8179TB
S06
UNITS
mA
dB
MIN
2.9
11.0
13.0
13.0
39.0
37.0
36.0
-0.5
-2.0
-3.0
–
–
–
4.0
4.0
6.0
TYP
4.0
13.5
15.5
15.5
44.0
42.0
41.0
3.0
1.5
1.0
5.0
5.0
5.0
7.0
7.0
9.0
MAX
5.4
15.5
17.5
17.5
–
–
–
–
–
–
6.5
6.5
6.5
–
–
–
SYMBOLS
I
CC
GP
DI
S
ISOL
CO
Circuit Current (no input signal)
Power Gain,
f = 1.0 GHz, P
IN
= -30 dBm
f = 1.9 GHz, P
IN
= -30 dBm
f = 2.4 GHz, P
IN
= -30 dBm
f = 1.0 GHz, P
IN
= -30 dBm
f = 1.9 GHz, P
IN
= -30 dBm
f = 2.4 GHz, P
IN
= -30 dBm
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
Isolation,
Output Power at
1 dB gain
compression,
Noise Figure,
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
Input Return Loss,
(without matching
circuit)
f = 1.0 GHz, P
IN
= -30 dBm
f = 1.9 GHz, P
IN
= -30 dBm
f = 2.4 GHz, P
IN
= -30 dBm
• Buffer amplifiers for 0.1 to 2.4 GHz mobile communications
systems.
NEC's UPC8179TB is a silicon monolithic integrated circuit
designed as amplifier for mobile communications. This IC can
realize low current consumption with external chip inductor
which can be realized on internal 50Ω wideband matched IC.
This low current amplifier uns on 3.0 V. This IC is manufactured
using NEC's 30 GHz fMAX UHS0 (Ultra High Speed Process)
silicon bipolar process. This process uses direct silicon nitride
passivation film and gold electrodes. These materials can
protect the chip surface from pollution and prevent corrosion/
migration. Thus this IC has exellent performance uniformity
and reliability.
PARAMETERS AND CONDITIONS
P
1dB
NF
RL
IN
UE
0
–10
–20
1.0 GHz
–30
1.9 GHz
0.3
1.0
3.0
Output match for best performance
at each frequency
dB
dB
dB
dB
California Eastern Laboratories
D
2.4 GHz
FEATURES
UPC8179TB
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CC
I
CC
P
D
T
OP
T
STG
P
IN
PARAMETERS
Supply Voltage, Pins 4 & 6
Circuit Current
Power Dissipation
2
Operating Temperature
Storage Temperature
Input Power
UNITS
V
mA
mW
°C
°C
dBm
RATINGS
3.6
15
270
-40 to +85
-55 to +150
+5
RECOMMENDED
OPERATING CONDITIONS
SYMBOLS
V
CC
T
A
PARAMETERS
Supply Voltage
Operating Ambient
Temperature
UNITS MIN
V
°C
2.7
-40
TYP MAX
3.0
+25
3.3
+85
PIN FUNCTIONS
Pin No.
1
Symbol
INPUT
Pin Voltage
1.09 V
Description
NT
IN
Ground pin. This pin should be
connected to the system ground with
minimum inductance. Ground pattern
on the board should be formed as
wide as possible. All the ground pins
must be connected together with
wide ground pattern to decrease
impedance difference.
Signal output pin. This pin is
designed as collector output. Due
to the high impedance output, this
pin should be externally equipped
with matching LC matching circuit
to next stage. For L, a size 1005
chip inductor can be chosen.
Power supply pin. This pin should
be externally equipped with bypass
capacitor to minimize its impedance.
5
Signal Input Pin. A internal
matching circuit, configured with
resistors, enable 50 W connection
over a wide band. This pin must
be coupled to signal source with
capacitor for DC cut.
UE
Internal Equivalent Circuit
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB (T
A
= +85°C).
2
3
5
GND
through external inductor
4
OUTPUT
Same as V
CC
voltage
6
TYPICAL PERFORMANCE CURVES
(Unless otherwise specified, T
A
= 25˚C)
CIRCUIT CURRENT vs. VOLTAGE
CIRCUIT CURRENT vs. TEMPERATURE
No signals
Vcc = 3.0 V
5
Circuit Current, I
CC
(mA)
DI
S
3
Circuit Current, I
CC
(mA)
4
CO
V
CC
2.4 to 3.3
No signals
4
3
2
2
1
1
0
0
1
2
3
4
0
–60
–40
–20
0
+20
+40
+60
+80
+100
Voltage, V
CC
(V)
Temperature, T
A
(°C)
D
6
4
2
3
1
5
TYPICAL PERFORMANCE CURVES
(Unless otherwise specified, T
A
= 25˚C)
1.0 GHz Output Port Matching
GAIN vs. FREQUENCY
+20
Vcc = 3.0 V
+10
TA = –40 ºC
–20
– 10
ISOLATION vs. FREQUENCY
V
CC
= 3.0 V
Isolation, ISOL (dB)
Gain, G
P
(dB)
0
TA = +25 ºC
–10
TA = +85ºC
–30
–20
–30
–40
0.1
0.3
1.0
3.0
Frequency, f (GHz)
INPUT RETURN LOSS vs. FREQUENCY
0
V
cc
= 3.0 V
NT
IN
+5
Output Return Loss, RL
OUT
(dBm)
Input Return Loss, RL
IN
(dB)
–5
T
A
= +85 ºC
–10
T
A
= +25 ºC
–15
T
A
= –40 ºC
–20
–25
–30
CO
0.3
1.0
3.0
0.1
Frequency, f (GHz)
OUTPUT POWER vs. INPUT POWER
V
CC
= 3.0 V
+10
+5
Thirf Order Intermodulation Distortion,
IM
3
(dBc)
DI
S
Output Power, P
OUT
(dBm)
T
A
= –40ºC
0
T
A
= +85ºC
–5
T
A
= +25ºC
–10
–15
–20
–25
–30
UE
–50
–60
–70
0.1
0.3
1.0
–40
T
A
= +25ºC
Frequency, f (GHz)
OUTPUT RETURN LOSS vs. FREQUENCY
V
CC
= 3.0 V
0
–5
TA = –40ºC
TA = +25ºC
–10
TA = +85ºC
–15
–20
–25
0.1
0.3
1.0
3.0
Frequency, f (GHz)
THIRD ORDER INTERMODULATION DISTORTION vs.
OUTPUT POWER OF EACH TONE
0
f1 = 1 000 MHz
-10
f2 = 1 001 MHz
-20
Vcc = 2.4 V
Vcc = 3.0 V
-30
-40
Vcc = 3.3 V
-50
-60
–20
–15
–10
–5
0
+5
–40
–35
–30
–25
–20
–15
–10
–5
0
+5
Input Power, P
IN
(dBm)
Output Power of Each Tone, P
OUT
(dBm)
D
T
A
= –40 ºC
T
A
= +85 ºC
3.0
TYPICAL PERFORMANCE CURVES
(Unless otherwise specified, T
A
= 25˚C)
1.0 GHz Output Port Matching
NOISE FIGURE vs. VOLTAGE
6.0
T
A
= +85 ºC
5.5
Noise Figure, NF (dB)
5.0
T
A
= +25 ºC
4.5
4.0
T
A
= –40 ºC
3.5
3.0
2.0
2.5
3.0
3.5
GAIN vs. FREQUENCY
+20
Vcc = 3.0 V
+10
T
A
= –40ºC
T
A
= +25ºC
Gain, G
P
(dB)
0
T
A
= +85ºC
–10
NT
IN
1.9 GHz Output Port Matching
–10
Vcc = 3.0 V
–20
Voltage, V
CC
(V)
Isolation, ISOL (dB)
–20
CO
0.3
1.0
3.0
–30
–40
0.1
Frequency, f (GHz)
INPUT RETURN LOSS vs. FREQUENCY
T
A
= +85ºC
0
DI
S
Output Return Loss, RL
OUT
(dBm)
Input Return Loss, RL
IN
(dB)
–5
T
A
= +25ºC
–10
T
A
= –40ºC
–15
–20
–25
–30
Vcc = 3.0 V
0.1
0.3
1.0
3.0
Frequency, f (GHz)
UE
ISOLATION vs. FREQUENCY
–30
T
A
= –40ºC
T
A
= +25ºC
–40
–50
T
A
= +85ºC
–60
–70
0.1
0.3
1.0
3.0
Frequency, f (GHz)
OUTPUT RETURN LOSS vs. FREQUENCY
+5
V
CC
= 3.0 V
0
–5
–10
–15
–20
T
A
= –40ºC
–25
0.1
0.3
1.0
3.0
Frequency, f (GHz)
D
T
A
= +85ºC
T
A
= +25ºC
TYPICAL PERFORMANCE CURVES
(Unless otherwise specified, T
A
= 25˚C)
1.9 GHz Output Port Matching
OUTPUT POWER vs. INPUT POWER
+10
0
Thirf Order Intermodulation Distortion,
IM
3
(dBc)
T
A
= –40ºC
+5
Output Power, P
OUT
(dBm)
-10
0
T
A
= +25ºC
–5
–10
T
A
= +85ºC
–15
–20
–25
V
CC
= 3.0 V
–30
–40
–35
–30
–25
–20
–15
–10
–5
0
+5
-20
UE
Vcc = 2.4 V
Vcc = 3.0 V
-40
-50
-60
–20
–15
–10
–5
0
-30
Input Power, P
IN
(dBm)
Output Power of Each Tone, P
OUT
(dBm)
NOISE FIGURE vs. VOLTAGE
5.5
T
A
= +85 ºC
Noise Figure, NF (dB)
5.0
4.5
T
A
= +25 ºC
4.0
3.5
T
A
= –40 ºC
3.0
2.0
CO
2.5
3.0
3.5
Voltage, V
CC
(V)
GAIN vs. FREQUENCY
T
A
= –40ºC
DI
S
+20
V
CC
= 3.0 V
+10
Isolation, ISOL (dB)
T
A
= +25ºC
Gain, G
P
(dB)
NT
IN
2.4 GHz Output Port Matching
ISOLATION vs. FREQUENCY
–10
V
CC
= 3.0 V
–20
–30
T
A
= +25ºC
–40
T
A
= –40ºC
–50
T
A
= +85ºC
0
–10
–20
–30
–60
T
A
= +85ºC
–40
0.1
0.3
1.0
3.0
–70
0.1
0.3
1.0
3.0
Frequency, f (GHz)
Frequency, f (GHz)
D
Vcc = 3.3 V
+5
f
1
= 1 900 MHz
f
2
= 1 901 MHz
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