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UPD4442161GF-C85

IC,SYNC SRAM,256KX16,CMOS,QFP,100PIN,PLASTIC

器件类别:存储    存储   

厂商名称:Renesas(瑞萨电子)

厂商官网:https://www.renesas.com/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Renesas(瑞萨电子)
Reach Compliance Code
unknown
最长访问时间
8.5 ns
最大时钟频率 (fCLK)
100 MHz
I/O 类型
COMMON
JESD-30 代码
R-PQFP-G100
JESD-609代码
e0
内存密度
4194304 bit
内存集成电路类型
STANDARD SRAM
内存宽度
16
端子数量
100
字数
262144 words
字数代码
256000
工作模式
SYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
256KX16
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
QFP
封装等效代码
QFP100,.63X.87
封装形状
RECTANGULAR
封装形式
FLATPACK
并行/串行
PARALLEL
电源
2.5 V
认证状态
Not Qualified
最大待机电流
0.01 A
最小待机电流
2.38 V
最大压摆率
0.28 mA
标称供电电压 (Vsup)
2.5 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子节距
0.635 mm
端子位置
QUAD
文档预览
PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD4442161, 4442181, 4442321, 4442361
4M-BIT CMOS SYNCHRONOUS FAST SRAM
FLOW THROUGH OPERATION
Description
The
µ
PD4442161 is a 262,144-word by 16-bit, the
µ
PD4442181 is a 262,144-word by 18-bit, the
µ
PD4442321 is a
131,072-word by 32-bit and the
µ
PD4442361 is a 131,072-word by 36-bit synchronous static RAM fabricated with
advanced CMOS technology using Full-CMOS six-transistor memory cell.
The
µ
PD4442161,
µ
PD4442181,
µ
PD4442321 and
µ
PD4442361 integrate unique synchronous peripheral circuitry,
2-bit burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the
single clock input (CLK).
The
µ
PD4442161,
µ
PD4442181,
µ
PD4442321 and
µ
PD4442361 are suitable for applications which require
synchronous operation, high speed, low voltage, high density and wide bit configuration, such as cache and buffer
memory.
ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State (“Sleep”).
In the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes normal
operation.
The
µ
PD4442161,
µ
PD4442181,
µ
PD4442321 and
µ
PD4442361 are packaged in 100-pin PLASTIC LQFP with a
1.4 mm package thickness for high density and low capacitive loading.
Features
3.3 V (A version) or 2.5 V (C version) Core Supply
Synchronous operation
Internally self-timed write control
Burst read / write : Interleaved burst and linear burst sequence
Fully registered inputs for flow through operation
All registers triggered off positive clock edge
3.3 V or 2.5 V LVTTL Compatible : All inputs and outputs
Fast clock access time : 6.5 ns (133 MHz), 7.5 ns (117 MHz), 8.5 ns (100 MHz)
Asynchronous output enable : /G
Burst sequence selectable : MODE
Sleep mode : ZZ (ZZ = Open or Low : Normal operation)
Separate byte write enable : /BW1 - /BW4 (
µ
PD4442321,
µ
PD4442361), /BW1 - /BW2 (
µ
PD4442161,
µ
PD4442181), /BWE
Global write enable : /GW
Three chip enables for easy depth expansion
Common I/O using three state outputs
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14519EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
2000
µ
PD4442161, 4442181, 4442321, 4442361
5
Ordering Information
Part number
Access
Time
ns
Clock
Frequency
MHz
133
117
100
133
117
100
133
117
100
133
117
100
117
100
117
100
117
100
117
100
2.5 ± 0.125
2.5 V LVTTL
C version
Core Supply
Voltage
V
3.3 ± 0.165
3.3 V or 2.5 V
LVTTL
100-pin PLASTIC
LQFP (14
×
20)
A version
I/O
Interface
Package
Remark
µ
PD4442161GF-A65
µ
PD4442161GF-A75
µ
PD4442161GF-A85
µ
PD4442181GF-A65
µ
PD4442181GF-A75
µ
PD4442181GF-A85
µ
PD4442321GF-A65
µ
PD4442321GF-A75
µ
PD4442321GF-A85
µ
PD4442361GF-A65
µ
PD4442361GF-A75
µ
PD4442361GF-A85
µ
PD4442161GF-C75
Note
µ
PD4442161GF-C85
Note
µ
PD4442181GF-C75
Note
µ
PD4442181GF-C85
Note
µ
PD4442321GF-C75
Note
µ
PD4442321GF-C85
Note
µ
PD4442361GF-C75
Note
µ
PD4442361GF-C85
Note
6.5
7.5
8.5
6.5
7.5
8.5
6.5
7.5
8.5
6.5
7.5
8.5
7.5
8.5
7.5
8.5
7.5
8.5
7.5
8.5
Note
Under development
2
Preliminary Data Sheet M14519EJ2V0DS
µ
PD4442161, 4442181, 4442321, 4442361
Pin Configurations (Marking Side)
/××× indicates active low signal.
100-pin PLASTIC LQFP (14
×
20)
[
µ
PD4442161GF,
µ
PD4442181GF ]
/BWE
/BW2
/BW1
/ADV
/CE2
/GW
CLK
CE2
V
DD
V
SS
/CE
/AC
/AP
NC
NC
A6
A7
A8
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
NC
NC
NC
V
DD
Q
V
SS
Q
NC
NC
I/O9
I/O10
V
SS
Q
V
DD
Q
I/O11
I/O12
NC
V
DD
NC
V
SS
I/O13
I/O14
V
DD
Q
V
SS
Q
I/O15
I/O16
I/OP2, NC
NC
V
SS
Q
V
DD
Q
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
A17
NC
NC
V
DD
Q
V
SS
Q
NC
I/OP1, NC
I/O8
I/O7
V
SS
Q
V
DD
Q
I/O6
I/O5
V
SS
NC
V
DD
ZZ
I/O4
I/O3
V
DD
Q
V
SS
Q
I/O2
I/O1
NC
NC
V
SS
Q
V
DD
Q
NC
NC
NC
V
DD
NC
NC
A10
A11
A12
A13
A14
A15
MODE
Remark
Refer to
Package Drawing
for 1-pin index mark.
A16
V
SS
NC
NC
A5
A4
A3
A2
A1
A0
A9
/G
Preliminary Data Sheet M14519EJ2V0DS
3
µ
PD4442161, 4442181, 4442321, 4442361
Pin Identifications
[
µ
PD4442161GF,
µ
PD4442181GF ]
Symbol
A0 - A17
Pin No.
37, 36, 35, 34, 33, 32, 100, 99, 82, 81,
44, 45, 46, 47, 48, 49, 50, 80
I/O1 - I/O16
58, 59, 62, 63, 68, 69, 72, 73, 8, 9, 12,
13, 18, 19, 22, 23
I/OP1, NC
I/OP2, NC
/ADV
/AP
/AC
/CE, CE2, /CE2
/BW1, /BW2, /BWE
/GW
/G
CLK
MODE
Note
Note
Description
Synchronous Address Input
Synchronous Data In,
Synchronous / Asynchronous Data Out
Synchronous Data In (Parity),
Synchronous / Asynchronous Data Out (Parity)
Synchronous Burst Address Advance Input
Synchronous Address Status Processor Input
Synchronous Address Status Controller Input
Synchronous Chip Enable Input
Synchronous Byte Write Enable Input
Synchronous Global Write Input
Asynchronous Output Enable Input
Clock Input
Asynchronous Burst Sequence Select Input
Do not change state during normal operation
74
24
83
84
85
98, 97, 92
93, 94, 87
88
86
89
31
ZZ
V
DD
V
SS
V
DD
Q
V
SS
Q
NC
64
15, 41, 65, 91
17, 40, 67, 90
4, 11, 20, 27, 54, 61, 70, 77
5, 10, 21, 26, 55, 60, 71, 76
1, 2, 3, 6, 7, 14, 16, 25, 28, 29, 30, 38,
39, 42, 43, 51, 52, 53, 56, 57, 66, 75,
78, 79, 95, 96
Asynchronous Power Down State Input
Power Supply
Ground
Output Buffer Power Supply
Output Buffer Ground
No Connection
Note
NC (No Connection) is used in the
µ
PD4442161GF.
I/OP1 - I/OP2 are used in the
µ
PD4442181GF.
4
Preliminary Data Sheet M14519EJ2V0DS
µ
PD4442161, 4442181, 4442321, 4442361
100-pin PLASTIC LQFP (14
×
20)
[
µ
PD4442321GF,
µ
PD4442361GF ]
/BWE
/BW4
/BW3
/BW2
/BW1
/ADV
/CE2
/GW
CE2
CLK
V
DD
V
SS
/AC
/CE
/AP
A6
A7
A8
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
I/OP3, NC
I/O17
I/O18
V
DD
Q
V
SS
Q
I/O19
I/O20
I/O21
I/O22
V
SS
Q
V
DD
Q
I/O23
I/O24
NC
V
DD
NC
V
SS
I/O25
I/O26
V
DD
Q
V
SS
Q
I/O27
I/O28
I/O29
I/O30
V
SS
Q
V
DD
Q
I/O31
I/O32
I/OP4, NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
I/OP2, NC
I/O16
I/O15
V
DD
Q
V
SS
Q
I/O14
I/O13
I/O12
I/O11
V
SS
Q
V
DD
Q
I/O10
I/O9
V
SS
NC
V
DD
ZZ
I/O8
I/O7
V
DD
Q
V
SS
Q
I/O6
I/O5
I/O4
I/O3
V
SS
Q
V
DD
Q
I/O2
I/O1
I/OP1, NC
NC
NC
A10
A11
A12
A13
A14
A15
MODE
Remark
Refer to
Package Drawing
for 1-pin index mark.
A16
V
DD
V
SS
A5
A4
A3
A2
A1
A0
NC
NC
A9
/G
Preliminary Data Sheet M14519EJ2V0DS
5
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参数对比
与UPD4442161GF-C85相近的元器件有:UPD4442361GF-A85、UPD4442321GF-A75、UPD4442161GF-A75。描述及对比如下:
型号 UPD4442161GF-C85 UPD4442361GF-A85 UPD4442321GF-A75 UPD4442161GF-A75
描述 IC,SYNC SRAM,256KX16,CMOS,QFP,100PIN,PLASTIC IC,SYNC SRAM,128KX36,CMOS,QFP,100PIN,PLASTIC IC,SYNC SRAM,128KX32,CMOS,QFP,100PIN,PLASTIC IC,SYNC SRAM,256KX16,CMOS,QFP,100PIN,PLASTIC
是否Rohs认证 不符合 不符合 不符合 不符合
厂商名称 Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子)
Reach Compliance Code unknown unknown unknown unknown
最长访问时间 8.5 ns 8.5 ns 7.5 ns 7.5 ns
最大时钟频率 (fCLK) 100 MHz 100 MHz 117 MHz 117 MHz
I/O 类型 COMMON COMMON COMMON COMMON
JESD-30 代码 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100
JESD-609代码 e0 e0 e0 e0
内存密度 4194304 bit 4718592 bit 4194304 bit 4194304 bit
内存集成电路类型 STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
内存宽度 16 36 32 16
端子数量 100 100 100 100
字数 262144 words 131072 words 131072 words 262144 words
字数代码 256000 128000 128000 256000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C
组织 256KX16 128KX36 128KX32 256KX16
输出特性 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 QFP QFP QFP QFP
封装等效代码 QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLATPACK FLATPACK FLATPACK FLATPACK
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL
电源 2.5 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
最大待机电流 0.01 A 0.01 A 0.01 A 0.01 A
最小待机电流 2.38 V 3.14 V 3.14 V 3.14 V
最大压摆率 0.28 mA 0.28 mA 0.3 mA 0.3 mA
表面贴装 YES YES YES YES
技术 CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 GULL WING GULL WING GULL WING GULL WING
端子节距 0.635 mm 0.635 mm 0.635 mm 0.635 mm
端子位置 QUAD QUAD QUAD QUAD
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器件捷径:
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
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