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US1M

1 A, 1000 V, SILICON, SIGNAL DIODE
1 A, 1000 V, 硅, 信号二极管

器件类别:半导体    分立半导体   

厂商名称:Yenyo Technology Co., Ltd.

厂商官网:http://www.yenyo.com.tw/

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器件:US1M

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器件参数
参数名称
属性值
端子数量
2
元件数量
1
加工封装描述
塑料, SMA, 2 PIN
无铅
Yes
欧盟RoHS规范
Yes
状态
ACTIVE
包装形状
矩形的
包装尺寸
SMALL OUTLINE
表面贴装
Yes
端子形式
C BEND
端子涂层
NOT SPECIFIED
端子位置
包装材料
塑料/环氧树脂
结构
单一的
二极管元件材料
二极管类型
信号二极管
反向恢复时间最大
0.0750 us
最大重复峰值反向电压
1000 V
最大平均正向电流
1 A
文档预览
YENYO
Surface Mount Ultra Fast Recovery Rectifier
Voltage Range 50 to 1000 V
Current 1.0 Ampere
SMA/DO-214AC
US1A THRU US1M
Features
¬
Fast switching for high efficiency
¬
Low forward voltage drop
¬
High current capability
¬
Low reverse leakage current
¬
High surge current capability
¬
Glass passivated chip
Mechanical Data
¬
Case: Molded plastic SMA/DO-214AC
¬
Epoxy: UL 94V-0 rate flame retardant
¬
Terminals: Solderable per MIL-STD-750
method 2026
¬
Polarity:Color band denotes cathode
¬
Mounting position: Any
¬
Weight: 0.064 gram
.055(1.40)
.062(1.60)
.098(2.50)
.114(2.90)
.157(4.00)
.181(4.60)
.006(.152)
.012(.305)
.078(2.00)
.096(2.44)
.002(.051)
.008(.203)
.188(4.80)
.208(5.28)
.030(0.76)
.060(1.52)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
CHARACTERISTIC
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
A
=55
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 1.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
o
o
o
SYMBOL
V
RRM
V
RMS
V
DC
IF
(AV)
US1A
50
35
50
US1B
100
70
100
US1D
200
140
200
US1G
400
280
400
1.0
US1J
600
420
600
US1K
800
560
800
US1M UNIT
1000
700
1000
V
V
V
A
I
FSM
30
A
V
F
I
R
Trr
C
J
R
JA
T
J
, T
STG
1.0
1.3
5.0
100
50
15
75
-55 to + 150
1.7
V
uA
uA
nS
pF
o
75
CW
o
C
NOTES : (1) Reverse recovery test conditions I
F
= 0.5A, I
R
= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to ambient.
1/2
DSA13, R0, Jun-05
RATINGS AND CHARACTERISTIC CURVES US1A THRU US1M
FIG.1 - FORWARD CURRENT DERATING CURVE
1.0
30
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
0.8
25
20
0.6
15
0.4
10
0.2
60 Hz Resistive or
Inductive load
0
0
50
100
o
5
0
150
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
10
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
US1A-US1D
1.0
US1G
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
100
T
J
=125 C
o
10
0.1
US1J-US1M
1
T
J
=25 C
o
0.01
0.4
0.6
0.8
1.0
T
J
=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
1.2
1.4
1.6
1.8
o
0.1
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
100
JUNCTION CAPACITANCE, pF
T
J
= 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
o
10
1
0.1
1.0
4.0
10
100
REVERSE VOLTAGE, VOLTS
YENYO TECHNOLOGY CO., LTD.
2/2
DSA14, R0, Jun-05
查看更多>
参数对比
与US1M相近的元器件有:US1G、US1B、US1K、US1A、US1D、US1J。描述及对比如下:
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描述 1 A, 1000 V, SILICON, SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 800 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC SIGNAL DIODE
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