UNISONIC TECHNOLOGIES CO., LTD
UT06P03
P-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
1
Power MOSFET
1
TO-252
4
The
UT06P03
is P-Channel Power MOSFET, designed
with high density cell with fast switching speed, ultra low
on-resistance, excellent thermal and electrical capabilities.
SOT-89
SYMBOL
6
5
1
2
3
SOT-26
ORDERING INFORMATION
Package
SOT-89
SOT-26
TO-252
1
G
D
G
Pin Assignment
2
3
4
5
D S
-
-
D G S D
D S
-
-
6
-
D
-
Packing
Tape Reel
Tape Reel
Tape Reel
Ordering Number
Lead Free
Halogen Free
-
UT06P03G-AB3-R
-
UT06P03G-AG6-R
UT06P03L-TN3-R
UT06P03G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
MARKING
SOT-89
SOT-26
6 5 4
6P03G
1 2 3
TO-252
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QW-R502-156.D
UT06P03
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
SYMBOL
V
DSS
V
GSS
I
D
I
DM
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1, 2)
Power MOSFET
RATINGS
UNIT
-30
V
±20
V
-4
A
-20
A
SOT-89
0.78
W
Total Power Dissipation (T
A
= 25°C) SOT-26
P
D
0.41
W
TO-252
1
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
SOT-89
SOT-26
TO-252
SOT-89
SOT-26
TO-252
θ
JA
MAX
160
300
110
18
110
7.93
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Junction to Ambient
Junction to Case
θ
JC
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QW-R502-156.D
UT06P03
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise noted)
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
V
GS
=0 V, I
D
=-250µA
V
DS
=-24V, V
GS
=0 V
V
DS
=0 V, V
GS
= ±20V
V
DS
=V
GS
, I
D
=-250 µA
V
GS
=-4.5V, I
D
=-3A
V
GS
=-10V, I
D
=-4A
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note 2)
Power MOSFET
MIN TYP
-30
MAX
UNIT
V
µA
nA
V
mΩ
1
±100
-0.9
-1.5
60
37
530
135
70
5.7
10
18
5
10
2.2
2
-3
75
45
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=-15V, V
GS
=0V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time (Note 2)
t
D(ON)
Turn-ON Rise Time
t
R
V
GS
=-10V,V
DS
=-15V,R
G
=6Ω,
I
D
=-1A
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall Time
t
F
Total Gate Charge (Note 2)
Q
G
V
DS
=0.5BV
DSS
, V
GS
=-10V,
Gate-Source Charge
Q
GS
I
D
=-4A
Gate-Drain Charge
Q
GD
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
F
= -1A, V
GS
= 0V
Maximum Body-Diode Continuous Current
I
S
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current (Note 1)
Reverse Recovery Time
t
RR
I
F
=-4 A, dI
F
/dt=100A/μs
Recovery Charge
Q
RR
Notes: 1. Pulse width limited by T
J(MAX)
2. Pulse width
≤300us,
duty cycle
≤2%.
3. Surface mounted on 1 in
2
copper pad of FR4 board.
pF
ns
14
nC
-1.2
-2.1
-4
15.5
7.9
V
A
ns
nC
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QW-R502-156.D
UT06P03
TYPICAL CHARACTERISTICS
On-Region Characteristics
25
V
GS
=-10V
-4.5V
-5.0V
-6.0V
2.4
-4.0V
2.2
2.0
1.8
-3.5V
1.6
1.4
-3.0V
5
0
0
1
2
3
4
Drain to Source Voltage,-V
DS
(V)
5
1.2
1.0
0.8
0
10
Power MOSFET
On-Resistance Variation with Drain
Current and Gate Voltage
V
GS
=-4V
20
15
-4.5V
-6.0V
-7.0V
-8.0V
-10V
10
40
20
30
Drain Current,-I
D
(A)
50
Normalized Drain-Source On-
Resistance,R
DS(ON)
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Reverse Drain Current,-I
S
(A)
Drain Current,-I
D
(A)
On-Resistance,R
DS(ON)
(Ω)
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UT06P03
TYPICAL CHARACTERISTICS(Cont.)
Power MOSFET
Gate-Source Voltage,-V
GS
(V)
Drain Current,-I
D
(A)
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Transient Thermal Response Curve
Power (W)
Capacitance (pF)
P(pk)
t
1
t
2
R
θ
JA
(t)=r(t)×R
θ
J
A
R
θ
JA
=160℃/W
T
J
-T
A
=P×R
θ
JA
(t)
Duty Cycle,D=t
1
/t
2
0.01
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
Time,t
1
(ms)
10
100
1000
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QW-R502-156.D
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