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UT3404L-AE3-R

N-CHANNEL ENHANCEMENT MODE MOSFET

器件类别:分立半导体    晶体管   

厂商名称:UNISONIC TECHNOLOGIES CO.,LTD

厂商官网:http://www.unisonic.com.tw/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
UNISONIC TECHNOLOGIES CO.,LTD
包装说明
SMALL OUTLINE, R-PDSO-G3
针数
3
Reach Compliance Code
compli
ECCN代码
EAR99
配置
SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压
30 V
最大漏极电流 (ID)
5.8 A
最大漏源导通电阻
0.028 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JESD-30 代码
R-PDSO-G3
元件数量
1
端子数量
3
工作模式
ENHANCEMENT MODE
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
N-CHANNEL
最大脉冲漏极电流 (IDM)
20 A
认证状态
Not Qualified
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
文档预览
UNISONIC TECHNOLOGIES CO., LTD
UT3404
N-CHANNEL ENHANCEMENT
MODE MOSFET
DESCRIPTION
The
UT3404
is N-Channel enhancement mode power MOSFET,
designed with high density cell, with fast switching speed, low
on-resistance, excellent thermal and electrical capabilities and
operation with low gate voltages.
This device is suitable for use as a load switch or in PWM
applications.
Power MOSFET
SYMBOL
3.Drain
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT3404L-AE3-R
UT3404G-AE3-R
Package
SOT-23
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
MARKING
34D
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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UT3404
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25℃, unless otherwise specified)
PARAMETER
Power MOSFET
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
30
V
Gate-Source Voltage
V
GSS
±20
V
Continuous Drain Current (Note 3)
I
D
5.8
A
Pulsed Drain Current (Note 1, 2)
I
DM
20
A
Power Dissipation
P
D
1.4
W
Junction Temperature
T
J
+150
Strong Temperature
T
STG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient (Note 3)
SYMBOL
θ
JA
MIN
TYP
85
MAX
125
UNIT
/W
ELECTRICAL CHARACTERISTICS
(T
J
=25℃, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
Drain-Source On-State Resistance (Note 2)
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
I
D(ON)
R
DS(ON)
TEST CONDITIONS
V
GS
=0V, I
D
=250uA
V
DS
=24V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
, I
D
=250uA
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=5.8A
V
GS
=4.5V, I
D
=5A
MIN
30
1
±100
1
20
22.5
34.5
680
102
77
4.6
3.8
20.9
5
13.88
1.8
3.12
0.76
28
43
820
1.9
3
TYP
MAX UNIT
V
uA
nA
V
A
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
ns
nC
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
GS
=0V,V
DS
=15V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
t
D(ON)
Turn-ON Rise Time
t
R
V
DS
=15V, V
GS
=10V, R
G
=3Ω,
R
D
=2.7Ω
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall Time
t
F
Total Gate Charge (Note 2)
Q
G
V
DS
=15V, V
GS
=10V, I
D
=5.8A
Gate-Source Charge
Q
GS
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
V
SD
I
S
=1A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Reverse Recovery Time
t
RR
I
F
=5.8A, dI/dt=100A/μs
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse width limited by T
J(MAX)
2. Pulse width
≤300us,
duty cycle
≤2%.
3. Surface mounted on 1 in
2
copper pad of FR4 board.
6.5
5.7
30
7.5
17
1
2.5
16.1
7.4
21
10
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UT3404
TYPICAL CHARACTERISTICS
On-Region Characteristics
30
25
Drain Current,I
D
(A)
20
15
3.5V
10
5
0
0
1
2
3
4
Drain to Source Voltage,V
DS
(V)
5
V
GS
=3V
10V
6V
5V
4.5V
Drain Current,I
D
(A)
4V
20
V
DS
=5V
16
12
8
4
0
0
Power MOSFET
Transfer Characteristics
125℃
25℃
0.5 1 1.5 2 2.5 3 3.5 4
Gate to Source Voltage,V
GS
(V)
4.5
Drain to Source On-
Resistance,R
DS(ON)
(mΩ)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Reverse Drain Current,I
S
(A)
Drain to Source On-
Resistance,R
DS(ON)
(mΩ)
Normalized On-Resistance
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UT3404
TYPICAL CHARACTERISTICS(Cont.)
10
Gate to Source Voltage,V
GS
(V)
8
6
4
2
0
0
2
6
4
8
10
Gate Charge,Q
G
(nC)
12
14
Gate-Charge Characteristics
V
DS
=15V
I
D
=5.8A
Capacitance (pF)
Power MOSFET
1000
900
800
700
600
500
400
300
200
100
0
0
Capacitance Characteristics
f=1MH
Z
V
GS
=0V
C
ISS
C
OSS
C
RSS
20
25
10
15
5
Drain to Source Voltage,V
DS
(V)
Single Pulse Power Rating Junction-
to-Ambient
T
J(Max)
=150℃
T
A
=25℃
30
100
Maximum Forward Biased Safe Operating
Area
10μs
R
DS(ON)
Limited
100μs
1ms
10ms
0.1s
40
Drain Current,I
D
(A)
30
Power (W)
100
10
20
1
T
J(Max)
=150℃
T
A
=25℃
1
1s
10s
DC
10
0.1
0.1
0
10
0.001 0.01
1
10
0.1
Pulse Width (s)
100
1000
Drain to Source Voltage,V
DS
(V)
Normalized Transient Thermal
Resistance,Z
θ
JA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R502-146.D
UT3404
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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参数对比
与UT3404L-AE3-R相近的元器件有:UT3404、UT3404G-AE3-R。描述及对比如下:
型号 UT3404L-AE3-R UT3404 UT3404G-AE3-R
描述 N-CHANNEL ENHANCEMENT MODE MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET
是否Rohs认证 符合 - 符合
厂商名称 UNISONIC TECHNOLOGIES CO.,LTD - UNISONIC TECHNOLOGIES CO.,LTD
包装说明 SMALL OUTLINE, R-PDSO-G3 - SMALL OUTLINE, R-PDSO-G3
针数 3 - 3
Reach Compliance Code compli - compli
ECCN代码 EAR99 - EAR99
配置 SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 30 V - 30 V
最大漏极电流 (ID) 5.8 A - 5.8 A
最大漏源导通电阻 0.028 Ω - 0.028 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-PDSO-G3 - R-PDSO-G3
元件数量 1 - 1
端子数量 3 - 3
工作模式 ENHANCEMENT MODE - ENHANCEMENT MODE
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY
封装形状 RECTANGULAR - RECTANGULAR
封装形式 SMALL OUTLINE - SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED - NOT SPECIFIED
极性/信道类型 N-CHANNEL - N-CHANNEL
最大脉冲漏极电流 (IDM) 20 A - 20 A
认证状态 Not Qualified - Not Qualified
表面贴装 YES - YES
端子形式 GULL WING - GULL WING
端子位置 DUAL - DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED - NOT SPECIFIED
晶体管应用 SWITCHING - SWITCHING
晶体管元件材料 SILICON - SILICON
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