Super323™
SOT323 NPN SILICON
POWER(SWITCHING) TRANSISTOR
ISSUE 1 - SEPTEMBER 1998
FEATURES
ZUMT618
*
*
*
*
*
500mW POWER DISSIPATION
I
C
CONT 1.25A
3A Peak Pulse Current
Excellent H
FE
Characteristics Up to 3A (pulsed)
Extremely Low Equivalent On Resistance;
R
CE(sat)
APPLICATIONS
*
Corded telecoms.
*
Boost functions in DC-DC converters
*
Motor driver functions
DEVICE TYPE
ZUMT618
COMPLEMENT
ZUMT718
PARTMARKING
T62
R
CE(sat)
125mΩ at1.25A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current**
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
VALUE
20
20
5
4
1.25
500
385 †
500 ‡
-55 to +150
UNIT
V
V
V
A
A
mA
mW
Operating and Storage Temperature
Range
T
j
:T
stg
°C
† Recommended P
tot
calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
ZUMT618
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
16.5
40
80
140
155
955
840
200
300
200
100
40
20
420
450
380
300
180
60
210
10
50
275
MHz
pF
ns
ns
MIN.
20
20
5
10
10
10
25
60
115
200
250
1100
1100
TYP.
MAX.
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
mV
CONDITIONS.
I
C
= 100µA
I
C
= 10mA*
I
E
= 100µA
V
CB
= 16V
V
EB
= 4V
V
CES
= 16V
I
C
= 100mA, I
B
=10mA*
I
C
= 250mA, I
B
= 10mA*
I
C
= 500mA, I
B
=10mA*
I
C
= 1A, I
B
=20mA*
I
C
= 1.25A, I
B
=50mA*
I
C
= 1.25A, I
B
=50mA*
I
C
= 1.25A, V
CE
= 2V*
I
C
= 10mA, V
CE
= 2V*
I
C
= 100mA, V
CE
= 2V*
I
C
= 500mA, V
CE
=2V*
I
C
= 1A, V
CE
=2 V*
I
C
= 2A, V
CE
=2V*
I
C
=4A, V
CE
= 2V*
I
C
= 50mA, V
CE
=10V
f= 100MHz
V
CB
= 10V, f=1MHz
V
CC
=10 V, I
C
=1A
I
B1
=I
B2
=100mA
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
V
BE(sat)
V
BE(on)
h
FE
Transition
Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
f
T
C
obo
t
(on)
t
(off)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
ZUMT618
TYPICAL CHARACTERISTICS
0.4
+25°C
0.4
IC/IB=50
0.3
0.3
V
CE(sat)
- (V)
V
CE(sat)
- (V)
IC/IB=10
IC/IB=50
IC/IB=100
0.2
0.2
-55°C
+25°C
+100°C
+150°C
0.1
0.1
0
1m
10m
100m
1
10
0
1m
10m
100m
1
10
I
C
- Collector Current (A)
V
CE(sat)
v I
C
I
C
- Collector Current (A)
V
CE(sat)
v I
C
VCE=2V
600
1.0
0.8
IC/IB=50
hFE - Typical Gain
+100°C
400
+25°C
V
BE(sat)
- (V)
0.6
0.4
0.2
-55°C
+25°C
+100°C
+150°C
-55°C
200
0
1m
10m
100m
1
I
C
- Collector Current (A)
10
0
1m
10m
100m
1
10
h
FE
v I
C
I
C
- Collector Current (A)
V
BE(sat)
v I
C
1.0
0.8
10
I
C
- Collector Current (A)
V
BE(on)
- (V)
0.6
0.4
0.2
0
1m
10m
100m
1
I
C
- Collector Current (A)
10
-55°C
+25°C
+100°C
+150°C
1
DC
1s
100ms
10ms
1ms
100µs
100m
10m
100m
1
10
100
V
CE
- Collector Emitter Voltage (V)
V
BE(on)
v I
C
Safe Operating Area
