P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt V
DS
* R
DS(on)
=8Ω
ZVP2110A
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
-100
-230
-3
±
20
700
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
-750
8
125
100
35
10
7
15
12
15
-100
-1.5
-3.5
20
-1
-100
MAX. UNIT CONDITIONS.
V
V
nA
µA
µA
mA
Ω
mS
pF
pF
pF
ns
ns
ns
ns
V
DD
≈-25V,
I
D
=-375mA
V
DS
=-25V, V
GS
=0V, f=1MHz
I
D
=-1mA, V
GS
=0V
ID=-1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=-100 V, V
GS
=0
V
DS
=-80 V, V
GS
=0V, T=125°C
(2)
V
DS
=-25 V, V
GS
=-10V
V
GS
=-10V,I
D
=-375mA
V
DS
=-25V,I
D
=-375mA
Static Drain-Source On-State R
DS(on)
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
(2) Sample test.
3-421
Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
(
3
)
ZVP2110A
TYPICAL CHARACTERISTICS
-1.6
V
GS=
-20V
-16V
-12V
-10V
-9V
-8V
-0.8
-7V
-0.6
-6V
-0.4
-0.2
0
0
-10
-20
-30
-40
-5V
-4.5V
-4V
-4V
-3.5V
-50
-1.6
V
GS
=
-20V
-16V
-12V
-1.2
-1.0
-0.8
-7V
-0.6
-0.4
-0.2
0
0
-2
-4
-6
-8
-5V
-4.5V
-4V
-3.5V
-10
-6V
-10V
-9V
-8V
I
D(On)
- Drain Current (Amps)
I
D(On)
- Drain Current (Amps)
-1.4
-1.2
-1.0
-1.4
V
DS
- Drain Source
Voltage (Volts)
V
DS
- Drain Source
Voltage (Volts)
Output Characteristics
Saturation Characteristics
V
DS-
Drain Source
Voltage (Volts)
-8
-1.6
I
D(On)
Drain Current (Amps)
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0
0
-2
-4
-6
-8
-10
V
DS=-
10V
-6
-4
I
D=
-0.5A
-0.25A
0
0
-2
-4
-6
-8
-0.1A
-10
-2
V
GS-
Gate Source Voltage
(Volts)
V
GS-
Gate Source
Voltage (Volts)
Voltage Saturation Characteristics
R
DS(on)
-Drain Source On Resistance
(Ω)
Transfer Characteristics
100
2.6
Normalised R
DS(on)
and V
GS(th)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-40 -20
0
V
GS=
-10V
I
D=
-0.375A
V
GS
=-4V
-5V
10
-7V
-10V
-20V
e
urc
-So
ain
Dr
Re
R
ce
an
ist
s
)
(on
DS
V
GS=
V
DS
I
D=
-1mA
Gate Thresh
old Voltage
V
GS(th)
1
10
100
1000
20 40 60 80 100 120 140 160 180°C
I
D-
Drain Current (mA)
On-resistance v drain current
Normalised R
DS(on)
and V
GS(th)
vs Temperature
3-422
ZVP2110A
TYPICAL CHARACTERISTICS
250
250
V
DS=
-10V
g
fs
-Transconductance (mS)
200
150
100
50
0
0
-0.2
-0.4
-0.6
-0.8
g
fs
-Transconductance (mS)
200
150
100
50
0
0
-2
-4
-6
-8
-10
V
DS=
-10V
-1.0
-1.2
-1.4
-1.6
I
D
- Drain Current (Amps)
V
GS
-Gate Source Voltage (Volts)
Transconductance v drain current
Transconductance v gate-source voltage
V
GS
-Gate Source Voltage (Volts)
0
-2
-4
-6
-8
-10
-12
-14
-16
0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
=
-25V -50V -100V
I
D=-
0.5A
80
C-Capacitance (pF)
60
C
iss
40
20
C
oss
0
0
-20
-40
-60
-80
C
rss
-100
V
DS
-Drain Source Voltage (Volts)
Q-Gate Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
3-423
