ZXMN10A07F
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
= 100V : R
DS(on)
= 0.7
DESCRIPTION
I
D
= 0.8A
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage power management applications.
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
SOT23 package
SOT23
APPLICATIONS
•
DC-DC converters
•
Power Management functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE
ZXMN10A07FTA
ZXMN10A07FTC
REEL
SIZE
7”
13”
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000 units
10000 units
PINOUT
DEVICE MARKING
•
7N1
Top View
ISSUE 5 - JULY 2003
1
SEMICONDUCTORS
ZXMN10A07F
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ V
GS
=10V;
@ V
GS
=10V;
@ V
GS
=10V;
Pulsed Drain Current
(c)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
(c)
Power Dissipation at T
A
=25°C
Linear Derating Factor
(a)
(b)
SYMBOL
V
DSS
V
GS
T
A
=25°C
(b)
T
A
=70°C
(b)
T
A
=25°C
(a)
I
D
LIMIT
100
20
0.8
0.6
0.7
3.5
0.5
3.5
625
5
806
6.4
-55 to +150
UNIT
V
V
A
I
DM
I
S
I
SM
P
D
P
D
T
j
;T
stg
A
A
A
mW
mW/°C
mW
mW/°C
°C
Power Dissipation at T
A
=25°C
(b)
Linear Derating Factor
Operating and Storage Temperature Range
THERMAL RESISTANCE
PARAMETER
Junction to Ambient
(a)
Junction to Ambient
(b)
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t
5 secs.
SYMBOL
R
JA
R
JA
VALUE
200
155
UNIT
°C/W
°C/W
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
ISSUE 5 - JULY 2003
SEMICONDUCTORS
2
ZXMN10A07F
CHARACTERISTICS
ISSUE 5 - JULY 2003
3
SEMICONDUCTORS
ZXMN10A07F
ELECTRICAL CHARACTERISTICS
(at Tamb = 25°C unless otherwise stated)
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance
(1)
Forward Transconductance
(1) (3)
DYNAMIC
(3)
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
t
rr
100
1
100
2.0
4.0
0.7
0.9
1.6
V
A
nA
V
I
D
=250 A, V
GS
=0V
V
DS
=100V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
I =250 A, V
DS
=V
GS
D
V
GS
=10V, I
D
=1.5A
V
GS
=6V, I
D
=1A
S
V
DS
=15V,I
D
=1A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
(2) (3)
138
12
6
pF
pF
pF
V
DS
=50 V, V
GS
=0V,
f=1MHz
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
Reverse Recovery Time
(3)
Reverse Recovery Charge
(3)
1.8
1.5
4.1
2.1
2.9
0.7
1
ns
ns
ns
ns
nC
nC
nC
V
DS
=50V,V
GS
=10V,
I
D
=1A
V
DD
=50V, I
D
=1A
R
G
=6.0 , V
GS
=10V
0.85
27
12
0.95
V
ns
nC
T
j
=25°C, I
S
=1.5A,
V
GS
=0V
T
j
=25°C, I
S
=1.8A,
di/dt=100A/µs
Q
rr
NOTES
(1) Measured under pulsed conditions. Pulse width
300µs; duty cycle 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 5 - JULY 2003
SEMICONDUCTORS
4
ZXMN10A07F
TYPICAL CHARACTERISTICS
ISSUE 5 - JULY 2003
5
SEMICONDUCTORS
