ZXMN2A01E6
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
= 20V; R
DS(ON)
= 0.12
I
D
= 3.1A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
SOT23-6 package
SOT23-6
APPLICATIONS
•
DC - DC Converters
•
Power management functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE
ZXMN2A01E6TA
ZXMN2A01E6TC
REEL
SIZE
7”
13”
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000 units
10000 units
PINOUT
DEVICE MARKING
•
2A1
Top View
ISSUE 3 - FEBRUARY 2006
1
ZXMN2A01E6
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current V GS =10V; T A =25°C (b)
V GS =10V; T A =70°C (b)
V GS =10V; T A =25°C (a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at T A =25°C (a)
Linear Derating Factor
Power Dissipation at T A =25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V DSS
V GS
ID
LIMIT
20
12
3.1
2.5
2.5
11
2.4
11
1.1
8.8
1.7
13.6
-55 to +150
UNIT
V
V
A
I DM
IS
I SM
PD
PD
T j :T stg
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R
θJA
R
θJA
VALUE
113
70
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
ISSUE 3 - FEBRUARY 2006
2
ZXMN2A01E6
CHARACTERISTICS
ISSUE 3 - FEBRUARY 2006
3
ZXMN2A01E6
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated)
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
V (BR)DSS
I DSS
I GSS
V GS(th)
0.7
20
1
100
V
µA
nA
V
0.12
Ω
0.225
Ω
6.1
S
I D =250µA, V GS =0V
V DS =20V, V GS =0V
V GS = 12V, V DS =0V
I =250µA, V DS = V GS
D
V GS =4.5V,
V GS =2.5V,
I D =4A
I D =1.5A
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Static Drain-Source On-State Resistance R DS(on)
(1)
Forward Transconductance (1)(3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2)
(3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
V SD
t rr
Q rr
0.9
23
5.65
t d(on)
tr
t d(off)
tf
Qg
Q gs
Q gd
2.49
5.21
7.47
4.62
3.0
0.8
1.0
C iss
C oss
C rss
303
59
30
g fs
V DS =10V,I D =4A
pF
pF
pF
V DS =15 V, V GS =0V,
f=1MHz
ns
ns
ns
ns
nC
nC
nC
V DS =10V,V GS =4.5V,
I
D
=4A
V DD =10V, I D =4A
R G =6.0Ω, V GS =5V
0.95
V
ns
nC
T J =25°C, I S =3.2A,
V GS =0V
T J =25°C, I F = 4A,
di/dt= 100A/µs
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 3 - FEBRUARY 2006
4
ZXMN2A01E6
TYPICAL CHARACTERISTICS
ISSUE 3 - FEBRUARY 2006
5
