V8P45-M3, V8P45HM3
www.vishay.com
Vishay General Semiconductor
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.34 V at I
F
= 4 A
TMBS
®
eSMP
®
Series
K
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
Available
1
2
• High efficiency operation
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020,
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 8.0 A (T
A
= 125 °C)
T
J
max.
Package
Diode variation
8.0 A
45 V
140 A
0.41 V
150 °C
TO-277A (SMPC)
Single die
MECHANICAL DATA
Case:
TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
Notes
(1)
Mounted on 30 mm x 30 mm pad areas aluminum PCB
(2)
Free air, mounted on recommended copper pad area
V
RRM
I
F (1)
I
F (2)
I
FSM
T
J
, T
STG
SYMBOL
V8P45
V845
45
8.0
4.3
140
-40 to +150
V
A
A
°C
UNIT
Revision: 04-May-15
Document Number: 87710
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V8P45-M3, V8P45HM3
www.vishay.com
Vishay General Semiconductor
TEST CONDITIONS
SYMBOL
TYP.
0.44
V
F (1)
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
I
R (2)
0.49
0.34
0.41
-
5.0
MAX.
-
0.58
-
0.49
0.6
20
mA
V
UNIT
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
I
F
= 4.0 A
Instantaneous forward voltage
I
F
= 8.0 A
I
F
= 4.0 A
I
F
= 8.0 A
Reverse current
V
R
= 45 V
T
A
= 25 °C
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: pulse width
5 ms
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
JA
(1)(2)
V8P45
75
4
UNIT
°C/W
R
JM
(3)
Notes
(1)
The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/R
D
J
JA
(2)
Free air mounted on recommended copper pad area; thermal resistance R
JA
- junction to ambient
(3)
Mounted on 30 mm x 30 mm aluminum PCB; thermal resistance R
JM
- junction to mount
ORDERING INFORMATION
(Example)
PREFERRED P/N
V8P45-M3/86A
V8P45-M3/87A
V8P45HM3/86A
V8P45HM3/87A
V8P45HM3_A/I
(1)
(1)
UNIT WEIGHT (g)
0.10
0.10
0.10
0.10
0.10
0.10
PREFERRED PACKAGE CODE
86A
87A
86A
87A
H
I
BASE QUANTITY
1500
6500
1500
6500
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
V8P45HM3_A/H
(1)
(1)
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Average Forward Rectified Current (A)
9
8
7
6
5
4
3
2
1
0
0
25
50
75
100
125
150
4.4
4.0
D = 0.8
D = 0.5
D = 0.3
D = 1.0
D = 0.2
D = 0.1
T
T
M
= 132 °C, R
θJM
= 4 °C/W
Average Power Loss (W)
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0
1
2
3
4
T
A
= 25 °C, R
θJA
= 75 °C/W
D = t
p
/T
t
p
5
6
7
8
9
Mount Temperature (°C)
Fig. 1 - Forward Current Derating Curve
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Revision: 04-May-15
Document Number: 87710
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V8P45-M3, V8P45HM3
www.vishay.com
Vishay General Semiconductor
10 000
Instantaneous Forward Current (A)
10
T
A
= 150 °C
T
A
= 125 °C
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
1000
1
T
A
= 100 °C
T
A
= 25 °C
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
100
0.1
1
10
100
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
100
T
A
= 150 °C
10
T
A
= 125 °C
1
T
A
= 100 °C
100
Junction to Ambient
10
0.1
0.01
T
A
= 25 °C
0.001
20
40
60
80
100
1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 04-May-15
Document Number: 87710
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V8P45-M3, V8P45HM3
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-277A (SMPC)
0.187 (4.75)
0.175 (4.45)
K
0.016 (0.40)
0.006 (0.15)
Vishay General Semiconductor
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
0.087 (2.20)
0.075 (1.90)
0.047 (1.20)
0.039 (1.00)
Mounting Pad Layout
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.268
(6.80)
0.186 (4.72)
MIN.
0.049 (1.24)
0.037 (0.94)
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
Conform to JEDEC
®
TO-277A
0.050 (1.27)
MIN.
0.041
(1.04)
0.055 (1.40)
MIN.
Revision: 04-May-15
Document Number: 87710
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Revision: 08-Feb-17
1
Document Number: 91000