New Product
VFT3080S
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.39 V at I
F
= 5 A
TMBS
®
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
3
ITO-220AB
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
•
Halogen-free according to IEC 61249-2-21 definition
1
VFT3080S
PIN 1
PIN 2
2
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PIN 3
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 30 A
T
J
max.
30 A
80 V
200 A
0.73 V
150 °C
MECHANICAL DATA
Case:
ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated V
R
)
Isolation voltage from termal to heatsink t = 1 min
Operating junction and storage temperature range
SYMBOL
V
RRM
I
F(AV)
I
FSM
dV/dt
V
AC
T
J
, T
STG
VFT3080S
80
30
200
10 000
1500
- 55 to + 150
UNIT
V
A
A
V/μs
V
°C
Document Number: 89263
Revision: 18-Nov-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
New Product
VFT3080S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
I
F
= 5 A
I
F
= 15 A
Instantaneous forward voltage
I
F
= 30 A
I
F
= 5 A
I
F
= 15 A
I
F
= 30 A
Reverse current
V
R
= 80 V
T
A
= 25 °C
T
A
= 125 °C
I
R (2)
T
A
= 125 °C
T
A
= 25 °C
V
F (1)
SYMBOL
TYP.
0.47
0.61
0.82
0.39
0.57
0.73
70
23
MAX.
-
-
0.95
V
-
-
0.72
1000
45
μA
mA
UNIT
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
≤
40 ms
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
θJC
VFT3080S
5.0
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
ITO-220AB
PREFERRED P/N
VFT3080S-M3/4W
UNIT WEIGHT (g)
1.75
PACKAGE CODE
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
35
Resistive or Inductive Load
30
V(B,I)T3080S
D = 0.5
D = 0.8
25
D = 0.2
20
D = 0.1
15
T
10
5
D = t
p
/T
0
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
35
t
p
D = 1.0
D = 0.3
Average Forward Current (A)
25
20
15
10
5
Mounted on Specific Heatsink
0
VFT3080S
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Average Power Loss (W)
30
Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89263
Revision: 18-Nov-10
New Product
VFT3080S
Vishay General Semiconductor
Transient Thermal Impedance (°C/W)
100
10
Junction to Case
Instantaneous Forward Current (A)
T
A
= 150 °C
10
T
A
= 125 °C
1
1
T
A
= 100 °C
T
A
= 25 °C
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
0.1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
t - Pulse Duration (s)
Fig. 5 - Typical Transient Thermal Impedance
Instantaneous Reverse Current (mA)
100
T
A
= 150 °C
10
T
A
= 125 °C
10 000
1
T
A
= 100 °C
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
1000
0.1
T
A
= 25 °C
0.01
0.001
20
30
40
50
60
70
80
90
100
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
ITO-220AB
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
45° REF.
0.600 (15.24)
0.580 (14.73)
PIN
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
1
2
3
7° REF.
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.191 (4.85)
0.171 (4.35)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.028 (0.71)
0.020 (0.51)
Document Number: 89263
Revision: 18-Nov-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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1