VHF 36
Half Controlled
Single Phase Rectifier Bridge
with Freewheeling Diode
I
dAVM
= 40 A
V
RRM
= 800-1600 V
V
RSM
V
DSM
V
900
1300
1500
1700
V
RRM
V
DRM
V
800
1200
1400
1600
Type
6
4
2
1
3
1
2
3
6
4
VHF 36-08io5
VHF 36-12io5
VHF 36-14io5
VHF 36-16io5
8
8
Symbol
I
dAV
I
dAVM
x
I
FRMS
, I
TRMS
I
FSM
, I
TSM
Test Conditions
T
K
= 85°C, module
module
per leg
T
VJ
= 45°C;
V
R
= 0 V
T
VJ
= T
VJM
V
R
= 0 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
repetitive, I
T
= 50 A
Maximum Ratings
36
40
28
320
350
280
310
500
520
390
400
150
A
A
A
A
A
A
A
As
A
2
s
A
2
s
A
2
s
A/ms
2
Features
Package with DCB ceramic base plate
Isolation voltage 3600 V~
Planar passivated chips
¼" fast-on terminals
UL registered E 72873
q
q
q
q
q
It
2
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= T
VJM
V
R
= 0 V
Applications
Supply for DC power equipment
DC motor control
q
q
q
q
q
(di/dt)
cr
T
VJ
= 125°C
f =50 Hz, t
P
=200
ms
V
D
= 2/3 V
DRM
I
G
= 0.3 A,
di
G
/dt = 0.3 A/ms
non repetitive, I
T
= 1/2 • I
dAV
500
1000
10
A/ms
V/ms
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling
(dv/dt)
cr
V
RGM
P
GM
P
GAVM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
T
VJ
= T
VJM
; V
DR
= 2/3 V
DRM
R
GK
=
¥;
method 1 (linear voltage rise)
T
VJ
= T
VJM
I
T
= I
TAVM
t
p
= 30
ms
t
p
= 500
ms
t
p
= 10 ms
£
£
£
Dimensions in mm (1 mm = 0.0394")
V
W
W
W
W
°C
°C
°C
V~
V~
Nm
lb.in.
g
10
5
1
0.5
-40...+125
125
-40...+125
50/60 Hz, RMS
I
ISOL
£
1 mA
Mounting torque
t = 1 min
t=1s
(M5)
(10-32 UNF)
3000
3600
2-2.5
18-22
50
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
x
for resistive load
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1-3
VHF 36
Symbol
I
R
, I
D
V
T
, V
F
V
T0
r
T
V
GT
I
GT
Test Conditions
V
R
= V
RRM
; V
D
= V
DRM
I
T
, I
F
= 45 A; T
VJ
= 25°C
For power-loss calculations only (T
VJ
= 125°C)
V
D
= 6 V;
V
D
= 6 V;
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 125°C
V
D
= 2/3 V
DRM
V
D
= 2/3 V
DRM
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 125°C
£
£
£
£
£
£
£
£
£
£
£
£
typ.
T
VJ
= T
VJM
T
VJ
= 25°C
Characteristic Values
£
£
£
5
0.3
1.45
0.85
13
1.0
1.2
65
80
50
0.2
5
150
200
100
100
2
150
75
1.15
0.29
1.55
0.39
12.6
6.3
50
mA
mA
V
V
mW
V
V
mA
mA
mA
V
mA
mA
mA
mA
mA
ms
ms
mC
K/W
K/W
K/W
K/W
mm
mm
m/s
2
1000
µs
t
gd
100
typ.
Limit
T
VJ
= 25°C
0.1
1
1
10
1: I
GT
, T
VJ
= 125°C
V
V
G
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
2
3
6
4
5
V
GD
I
GD
I
L
T
VJ
= T
VJM
;
T
VJ
= T
VJM
;
I
G
= 0.3 A; t
G
= 30
ms;
di
G
/dt = 0.3 A/ms;
I
GD
, T
VJ
= 125°C
4: P
GAV
= 0.5 W
5: P
GM
= 1 W
6: P
GM
= 10 W
1
10
100
1000
I
G
mA
I
H
t
gd
t
q
Q
r
R
thJC
R
thJK
d
S
d
A
a
T
VJ
= 25°C; V
D
= 6 V; R
GK
=
¥
T
VJ
= 25°C; V
D
= 1/2 V
DRM
I
G
= 0.3 A; di
G
/dt = 0.3 A/ms
T
VJ
= 125°C, I
T
= 15 A, t
P
= 300
ms,
V
R
= 100 V
di/dt = -10 A/ms, dv/dt = 20 V/ms, V
D
= 2/3 V
DRM
per thyristor (diode); DC current
per module
per thyristor (diode); DC current
per module
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
Fig. 1 Gate trigger range
10
1
10
100
I
G
mA 1000
Fig. 2 Gate controlled delay time t
gd
© 2000 IXYS All rights reserved
2-3
750
VHF 36
70
A
60
I
F
50
40
30
100
20
300
A
10
3
As
I
2
t
2
50Hz, 80% V
RRM
V
R
= 0 V
typ.
250
I
FSM
200
T
VJ
= 45°C
T
VJ
= 45°C
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 25°C
max.
150
10
2
T
VJ
= 125°C
10
0
0.0
50
0.5
1.0
V
F
1.5
V 2.0
0
0.001
10
1
0.01
0.1
t
s
1
1
2
3
4 5 6 7 8 910
ms
t
Fig. 3 Forward current versus voltage
drop per diode
120
W
100
P
tot
80
Fig. 4 Surge overload current
Fig. 5 I
2
t versus time per diode
50
A
R
thHA
:
0.5
1.0
1.5
2.0
3.0
4.0
6.0
K/W
K/W
K/W
K/W
K/W
K/W
K/W
40
I
d(AV)M
30
60
20
40
10
20
0
0
10
20
30
40
I
F(AV)M
A
0
20
40
60
80
100 120 °C
140
T
amb
0
0
20
40
60
80 100 120 °C
T
H
Fig. 6 Power dissipation versus direct output current and ambient temperature
2.0
K/W
1.5
Z
thJH
Fig. 7 Max. forward current versus
heatsink temperature
1.0
Constants for Z
thJH
calculation:
i
R
thi
(K/W)
0.005
0.2
0.875
0.47
t
i
(s)
0.008
0.05
0.06
0.25
0.5
1
2
3
4
0.01
0.1
1
t
s
10
0.0
0.001
Fig. 8 Transient thermal impedance junction to heatsink
© 2000 IXYS All rights reserved
3-3
