VN0545
VN0550
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV
DSS
/
BV
DGS
450V
500V
†
MIL visual screening available
R
DS(ON)
(max)
60Ω
60Ω
I
D(ON)
(min)
150mA
150mA
Order Number / Package
TO-39
—
VN0550N2
TO-92
VN0545N3
VN0550N3
Die
†
VN0545ND
VN0550ND
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Features
s
Free from secondary breakdown
s
Low power drive requirement
s
Ease of paralleling
s
Low C
ISS
and fast switching speeds
s
Excellent thermal stability
s
Integral Source-Drain diode
s
High input impedance and high gain
s
Complementary N- and P-channel devices
Package Options
Applications
s
Motor controls
s
Converters
s
Amplifiers
s
Switches
s
Power supply circuits
s
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
DGS
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
7-165
BV
DSS
BV
DGS
±
20V
-55°C to +150°C
300°C
TO-39
Case: DRAIN
SGD
TO-92
Note: See Package Outline section for dimensions.
VN0545/VN0550
Thermal Characteristics
Package
TO-39
TO-92
I
D
(continuous)*
100mA
50mA
I
D
(pulsed)
300mA
250mA
Power Dissipation
@ T
C
= 25
°
C
6.0W
1.0W
θ
jc
°
C/W
20.8
125
θ
ja
°
C/W
125
170
I
DR
*
100mA
50mA
I
DRM
300mA
250mA
*
I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(@ 25°C unless otherwise specified)
Symbol
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
Parameter
Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
VN0550
VN0545
Min
500
450
2
-3.8
4
-5.0
100
10
1
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
ON-State Drain Current
150
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
0.8
300
50
100
350
45
40
1
100
45
8
2
55
10
5
10
15
10
10
V
ns
V
GS
= 0V, I
SD
= 0.5A
V
GS
= 0V, I
SD
= 0.5A
ns
V
DD
= 25V,
I
D
= 150mA,
R
GEN
= 25Ω
pF
60
1.7
V
mV/°C
nA
µA
mA
Typ
Max
Unit
V
Conditions
V
GS
= 0V, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±20V,
V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125°C
V
GS
= 5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 5V, I
D
= 50mA
V
GS
= 10V, I
D
= 50mA
V
GS
= 10V, I
D
= 50mA
V
DS
= 25V, I
D
= 50mA
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
mA
Ω
%/°C
m
Ω
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
90%
INPUT
0V
10%
t
(ON)
t
d(ON)
V
DD
OUTPUT
0V
90%
90%
t
r
t
(OFF)
t
d(OFF)
t
F
PULSE
GENERATOR
R
gen
V
DD
R
L
OUTPUT
D.U.T.
10%
10%
INPUT
7-166
VN0545/VN0550
Typical Performance Curves
Output Characteristics
0.5
VGS = 10V
0.25
Saturation Characteristics
8V
0.4
0.20
6V
V
GS
= 10V
8V
6V
I
D
(amperes)
0.3
I
D
(amperes)
0.15
0.2
0.10
0.1
0.05
4V
4V
0
0
10
20
30
40
50
0
0
2
4
6
8
10
V
DS
(volts)
Transconductance vs. Drain Current
0.40
10
V
DS
(volts)
Power Dissipation vs. Case Temperature
V
DS
= 25V
0.32
8
G
FS
(siemens)
0.16
T
A
= 25°C
P
D
(watts)
0.24
T
A
= -55°C
TO-39
6
4
0.08
T
A
= 125°C
2
TO-92
0
0
0.1
0.2
0.3
0.4
0.5
0
0
25
50
75
100
125
150
I
D
(amperes)
Maximum Rated Safe Operating Area
1.0
TO-39 (pulsed)
1.0
T
C
(°C)
Thermal Response Characteristics
TO-39
P
D
= 6W
T
C
= 25°C
Thermal Resistance (normalized)
0.8
TO-39 (DC)
I
D
(amperes)
0.1
0.6
TO-92 (DC)
0.4
0.01
0.2
TO-92
P
D
= 1W
T
C
= 25°C
TC = 25°C
0.001
1
10
100
1000
0
0.001
0.01
0.1
1
10
V
DS
(volts)
t
p
(seconds)
7-167
VN0545/VN0550
Typical Performance Curves
BV
DSS
Variation with Temperature
100
1.1
80
On-Resistance vs. Drain Current
V
GS
= 5V
BV
DSS
(normalized)
R
DS(ON)
(ohms)
60
V
GS
= 10V
1.0
40
20
0.9
0
-50
0
50
100
150
0
0.1
0.2
0.3
0.4
0.5
T
j
(°C)
Transfer Characteristics
0.5
I
D
(amperes)
V
(th)
and R
DS
Variation with Temperature
1.4
1.8
V
DS
= 25V
0.4
R
DS(ON)
@ 10V, 50mA
V
GS(th)
(normalized)
25°C
1.2
1.4
0.3
V
(th)
@ 1mA
1.0
1.0
150°C
0.2
0.8
0.6
0.1
0.6
0
0.2
0
2
4
6
8
10
-50
0
50
100
150
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
100
10
T
j
(°C)
Gate Drive Dynamic Characteristics
V
DS
= 10V
8
f = 1MHz
75
105 pF
C (picofarads)
V
GS
(volts)
6
50
C
ISS
V
DS
= 40V
4
112 pF
25
2
C
OSS
C
RSS
0
0
10
20
30
40
50 pF
0
0
0.2
0.4
0.6
0.8
1.0
V
DS
(volts)
Q
G
(nanocoulombs)
7-168
R
DS(ON)
(normalized)
T
A
= -55
°
C
I
D
(amperes)
