VN0808L/LS, VQ1006P
Vishay Siliconix
N-Channel 80- and 90-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
VN0808L
VN0808LS
VQ1006P
80
90
V
(BR)DSS
Min (V)
r
DS(on)
Max (W)
4 @ V
GS
= 10 V
4 @ V
GS
= 10 V
4 @ V
GS
= 10 V
V
GS(th)
(V)
0.8 to 2
0.8 to
2
0.8 to 2.5
I
D
(A)
0.3
0.33
0.4
FEATURES
D
D
D
D
D
Low On-Resistance: 3.6
W
Low Threshold: 1.6 V
Low Input Capacitance: 35 pF
Fast Switching Speed: 6 ns
Low Input and Output Leakage
TO-226AA
(TO-92)
BENEFITS
D
D
D
D
D
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
TO-92S
S
1
APPLICATIONS
D
Direct Logic-Level Interface: TTL/CMOS
D
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D
Battery Operated Systems
D
Solid-State Relays
Dual-In-Line
D
1
N
S
1
G
1
NC
D
4
S
4
G
4
NC
G
3
S
3
D
3
N
N
1
2
3
4
5
6
7
14
13
12
11
10
9
8
S
1
G
2
G
2
D
3
N
D
3
Top View
Top View
VN0808L
VN0808LS
G
2
S
2
D
2
Front View:
VN0808LS
“S” VN
0808LS
xxyy
“S” = Siliconix Logo
f
= Factory Code
ll
= Lot Traceability
xxyy
= Date Code
Top View
Sidebraze: VQ1006P
Front View:
VN0808L
“S” VN
0808L
xxyy
Top View:
VQ1006P
VQ1006P
“S”f//xxyy
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
VQ1006P
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T
J
= 150_C)
Pulsed Drain Current
a
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 70214
S-04279—Rev.D, 16-Jul-01
www.vishay.com
T
A
= 25_C
T
A
= 100_C
T
A
= 25_C
T
A
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
VN0808L
80
"30
0.3
0.19
1.9
0.8
0.32
156
VN0808LS
80
"30
0.33
0.21
1.9
0.9
0.4
139
Single
90
"20
0.4
0.23
2
1.3
0.52
96
Total Quad
Unit
V
A
2
0.8
62.5
W
_C/W
_C
–55 to 150
11-1
VN0808L/LS, VQ1006P
Vishay Siliconix
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
VN0808L/LS
VQ1006P
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Unit
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 10
mA
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= 0 V, V
GS
=
"15
V
T
J
= 125_C
V
DS
= 80 V, V
GS
= 0 V
T
J
= 125_C
125
1.6
80
0.8
2
"100
90
V
0.8
2.5
"100
"500
10
500
1
500
mA
m
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 72 V, V
GS
= 0 V
T
J
= 125_C
On-State Drain Current
b
I
D(on)
V
DS
= 10 V, V
GS
= 10 V
V
GS
= 5 V, I
D
= 0.3 A
1.8
3.8
3.6
6.7
350
0.23
1.5
1.5
5
4
8
4.5
8.6
170
A
Drain-Source On-Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 1 A
T
J
= 125_C
W
Forward Transconductance
b
Common Source Output Conductance
b
g
fs
g
os
V
DS
= 10 V, I
D
= 0.5 A
V
DS
= 10 V, I
D
= 0.1 A
170
mS
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
35
15
2
50
40
10
60
50
10
pF
Switching
c
Turn-On Time
Turn-Off Time
t
ON
t
OFF
V
DD
= 25 V, R
L
= 23
W
I
D
^
1 A, V
GEN
= 10 V
R
G
= 25
W
6
8
10
10
10
ns
10
VNDQ09
Notes
a. For DESIGN AID ONLY, not subject to production testing..
b. Pulse test: PW
v300
ms
duty cycle
v2%.
c. Switching time is essentially independent of operating temperature.
www.vishay.com
11-2
Document Number: 70214
S-04279—Rev.D, 16-Jul-01
VN0808L/LS, VQ1006P
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
1.0
V
GS
= 10 V
6V
0.8
I
D
– Drain Current (mA)
5V
0.6
I
D
– Drain Current (mA)
60
80
100
Output Characteristics for Low Gate Drive
V
GS
= 3 V
2.8 V
2.6 V
4V
2.4 V
0.4
3V
0.2
2V
0
0
1.0
2.0
3.0
4.0
5.0
V
DS
– Drain-to-Source Voltage (V)
40
2.2 V
20
2.0 V
1.8 V
0
0
0.4
0.8
1.2
1.6
2.0
V
DS
– Drain-to-Source Voltage (V)
Transfer Characteristics
0.5
T
J
= –55_C
0.4
I
D
– Drain Current (A)
125_C
6
r
DS(on)
– On-Resistance (
Ω )
25_C
5
4
3
2
1
0
0
2
4
6
8
10
V
GS
– Gate-Source Voltage (V)
0
0
7
On-Resistance vs. Gate-to-Source Voltage
0.3
I
D
= 0.1 A
0.5 A
1.0 A
0.2
V
DS
= 15 V
0.1
4
8
12
16
20
V
GS
– Gate-Source Voltage (V)
On-Resistance vs. Drain Current
10
r
DS(on)
– Drain-Source On-Resistance (
Ω )
r
DS(on)
– Drain-Source On-Resistance (
Ω )
(Normalized)
2.25
Normalized On-Resistance
vs. Junction Temperature
V
GS
= 10 V
2.00
1.75
1.50
1.25
1.00
0.75
0.50
8
6
V
GS
= 10 V
4
2
0
0
0.5
1.0
1.5
2.0
2.5
–50
–10
30
70
110
150
I
D
– Drain Current (A)
T
J
– Junction Temperature (_C)
Document Number: 70214
S-04279—Rev.D, 16-Jul-01
www.vishay.com
11-3
VN0808L/LS, VQ1006P
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Threshold Region
10
V
DS
= 5 V
100
I
D
– Drain Current (mA)
1
T
J
= 150_C
C – Capacitance (pF)
125
V
GS
= 0 V
f = 1 MHz
Capacitance
75
50
C
oss
C
rss
0
0.1
125_C
25_C
–55_C
0.01
0.5
1.0
1.5
2.0
C
iss
25
0
10
20
30
40
50
V
GS
– Gate-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
15.0
I
D
= 1.0 A
V
GS
– Gate-to-Source Voltage (V)
12.5
t – Switching Time (ns)
100
Load Condition Effects on Switching
V
DD
= 25 V
R
L
= 23
W
V
GS
= 0 to 10 V
I
D
= 1.0 A
10.0
V
DS
= 45 V
7.5
72 V
5.0
10
t
d(off)
t
r
2.5
t
d(on)
t
f
1
0
100
200
300
400
500
0.1
I
D
– Drain Current (A)
1
2
Q
g
– Total Gate Charge (pC)
0
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
Notes:
P
DM
0.01
Single Pulse
0.01
0.1
1
10
100
2. Per Unit Base = R
thJA
= 156
_
C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
1K
10 K
t
1
– Square Wave Pulse Duration (sec)
www.vishay.com
11-4
Document Number: 70214
S-04279—Rev.D, 16-Jul-01
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
