型号
- 型号
- 关键词
Small Signal Field-Effect Transistor, 0.3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-226AA (TO-92), 3 PIN
厂商名称：Vishay(威世)
下载文档| 型号 | VN0808L-18 | VN0808L-TA |
|---|---|---|
| 描述 | Small Signal Field-Effect Transistor, 0.3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-226AA (TO-92), 3 PIN | Small Signal Field-Effect Transistor, 0.3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-226AA (TO-92), 3 PIN |
| 零件包装代码 | TO-92 | TO-92 |
| 包装说明 | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-W3 |
| 针数 | 3 | 3 |
| Reach Compliance Code | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 80 V | 80 V |
| 最大漏极电流 (ID) | 0.3 A | 0.3 A |
| 最大漏源导通电阻 | 4 Ω | 4 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 10 pF | 10 pF |
| JEDEC-95代码 | TO-226AA | TO-226AA |
| JESD-30 代码 | O-PBCY-W3 | O-PBCY-W3 |
| 元件数量 | 1 | 1 |
| 端子数量 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | ROUND | ROUND |
| 封装形式 | CYLINDRICAL | CYLINDRICAL |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO |
| 端子形式 | WIRE | WIRE |
| 端子位置 | BOTTOM | BOTTOM |
| 晶体管应用 | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON |
| Base Number Matches | 1 | 1 |
