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VN0808L-G P013

MOSFET N-CH Enhancmnt Mode MOSFET

器件类别:半导体    分立半导体    晶体管    MOSFET   

厂商名称:Microchip(微芯科技)

厂商官网:https://www.microchip.com

器件标准:

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器件参数
参数名称
属性值
厂商名称
Microchip(微芯科技)
产品种类
MOSFET
技术
Si
安装风格
Through Hole
封装 / 箱体
TO-92-3
通道数量
1 Channel
晶体管极性
N-Channel
Vds-漏源极击穿电压
80 V
Id-连续漏极电流
300 mA
Rds On-漏源导通电阻
4 Ohms
Vgs - 栅极-源极电压
30 V
最小工作温度
- 55 C
最大工作温度
+ 150 C
Pd-功率耗散
1 W
配置
Single
通道模式
Enhancement
封装
Cut Tape
封装
Reel
高度
5.33 mm
长度
5.21 mm
产品
MOSFET Small Signal
晶体管类型
1 N-Channel
宽度
4.19 mm
工厂包装数量
2000
单位重量
453.600 mg
文档预览
VN0808
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
General Description
This enhancement-mode (normally-off) transistor utilizes
a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities
of bipolar transistors and the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Ordering Information
Device
VN0808
Package Option
TO-92
VN0808L-G
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(A)
80
4.0
1.5
-G indicates package is RoHS compliant (‘Green’)
Pin Configuration
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
BV
DSS
BV
DGS
±30V
-55
O
C to +150
O
C
300 C
O
DRAIN
SOURCE
GATE
TO-92 (L)
Product Marking
YYWW
Si VN
0808L
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92 (L)
Package may or may not include the following marks: Si or
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
VN0808
Thermal Characteristics
Package
TO-92
(continuous)
(mA)
I
D
(pulsed)
(A)
I
D
Power Dissipation
@T
C
= 25
O
C
(W)
O
( C/W)
θ
jc
( C/W)
O
θ
ja
(mA)
I
DR
I
DRM
(A)
300
1.9
1.0
125
170
300
1.9
Notes:
† I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(T
Sym
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
(ON)
t
(OFF)
V
SD
Parameter
A
= 25
O
C unless otherwise specified)
Min
80
0.8
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
0.85
Max
-
2.0
100
10
500
-
4.0
-
50
40
10
10
10
-
Units
V
V
nA
µA
A
Ω
Conditions
V
GS
= 0V, I
D
= 10µA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= ±15V, V
DS
= 0V
V
GS
= 0V, V
DS
= 80V
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125°C
V
GS
= 10V, V
DS
= 10V
V
GS
= 10V, I
D
= 1.0A
V
GS
= 0V,
V
DS
= 25V,
f = 1.0MHz
V
DD
= 25V,
I
D
= 1.0A,
R
GEN
= 25Ω
V
GS
= 0V, I
SD
= 350mA
Drain-to-source breakdown voltage
Gate threshold voltage
Gate body leakage
Zero gate voltage drain current
On-state drain current
Static drain-to-source on-state resistance
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Turn-off delay time
Diode forward voltage drop
-
1.5
-
170
-
-
-
-
-
-
mmho V
DS
= 10V, I
D
= 500mA
pF
ns
V
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
V
DD
10V
90%
10%
t
(ON)
INPUT
0V
PULSE
GENERATOR
t
(OFF)
t
r
t
d(OFF)
t
F
10%
INPUT
R
L
OUTPUT
t
d(ON)
V
DD
R
GEN
10%
90%
D.U.T.
OUTPUT
0V
90%
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
2
VN0808
3-Lead TO-92 Package Outline (L)
D
A
Seating Plane
1
2
3
L
e1
e
b
c
Front View
Side View
E1
E
1
2
3
Bottom View
Symbol
Dimensions
(inches)
MIN
NOM
MAX
A
.170
-
.210
b
.014
-
.022
c
.014
-
.022
D
.175
-
.205
E
.125
-
.165
E1
.080
-
.105
e
.095
-
.105
e1
.045
-
.055
L
.500
-
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#:
DSPD-3TO92N3, Version E041009.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to
http://www.supertex.com/packaging.html.)
Supertex inc.
does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an
adequate “product liability indemnification insurance agreement.”
Supertex inc.
does not assume responsibility for use of devices described, and limits its liability to the
replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications
are subject to change without notice. For the latest product specifications refer to the
Supertex inc.
website: http//www.supertex.com.
©2009
All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-VN0808
A052109
3
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
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参数对比
与VN0808L-G P013相近的元器件有:VN0808L-P002、VN0808L-G P014。描述及对比如下:
型号 VN0808L-G P013 VN0808L-P002 VN0808L-G P014
描述 MOSFET N-CH Enhancmnt Mode MOSFET MOSFET 80V 4Ohm MOSFET N-CH Enhancmnt Mode MOSFET
厂商名称 Microchip(微芯科技) - Microchip(微芯科技)
产品种类 MOSFET - MOSFET
技术 Si - Si
安装风格 Through Hole - Through Hole
封装 / 箱体 TO-92-3 - TO-92-3
通道数量 1 Channel - 1 Channel
晶体管极性 N-Channel - N-Channel
Vds-漏源极击穿电压 80 V - 80 V
Id-连续漏极电流 300 mA - 300 mA
Rds On-漏源导通电阻 4 Ohms - 4 Ohms
Vgs - 栅极-源极电压 30 V - 30 V
最小工作温度 - 55 C - - 55 C
最大工作温度 + 150 C - + 150 C
Pd-功率耗散 1 W - 1 W
配置 Single - Single
通道模式 Enhancement - Enhancement
封装 Reel - Reel
高度 5.33 mm - 5.33 mm
长度 5.21 mm - 5.21 mm
产品 MOSFET Small Signal - MOSFET Small Signal
晶体管类型 1 N-Channel - 1 N-Channel
宽度 4.19 mm - 4.19 mm
工厂包装数量 2000 - 2000
单位重量 453.600 mg - 453.600 mg
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