N-CHANNEL ENHANCEMENT
MODE MOSFET
VN10KE
•
•
•
Low RDS(on), VGS(th), CISS And Fast Switching Speeds
Hermetic TO-52 Metal package.
Ideally Suited For Power Supply Circuits, Switching And
Driver (Relay, Solenoid, Lamp etc..) Applications
Screening Options Available
•
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VDS
VGS
ID
IDM
PD
TJ
Tstg
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Pulsed Drain Current
(1)
Total Power Dissipation at
Operating Temperature Range
Storage Temperature Range
TA = 25°C
TA = 100°C
TA = 25°C
Derate Above 25°C
60V
+15V, -0.3V
0.17A
0.11A
1.0A
312.5mW
2.5mW/°C
-55 to +150°C
-55 to +150°C
THERMAL PROPERTIES
Symbols
R
θJA
Parameters
Thermal Resistance, Junction To Ambient
Min.
Typ.
Max.
400
Units
°C/W
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 8418
Issue 1
Page 1 of 3
Website:
http://www.semelab-tt.com
N-CHANNEL ENHANCEMENT
MODE MOSFET
VN10KE
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols
BVDSS
VGS(th)
IGSS
IDSS
ID(ON)
(2)
(2)
Parameters
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
Zero Gate Voltage
Drain Current
On-State Drain Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Common Source
Output Conductance
Test Conditions
VGS = 0
VDS = VGS
VGS = 15V
VDS = 48V
ID = 100µA
ID = 1.0mA
VDS = 0V
VGS = 0
TJ = 125°C
VDS = 10V
VGS = 5V
VGS = 10V
ID = 0.2A
ID = 0.5A
TJ = 125°C
Min.
60
0.8
Typ.
Max.
Units
V
2.5
100
10
500
V
nA
µA
A
0.75
7.5
5
9
100
RDS(on)
(2)
VGS = 10V
Ω
gfs
VDS = 10V
VDS = 7.5V
ID = 0.5A
ID = 50mA
gos
(2)
m
0.2
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
td(on)
td(off)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-Off Delay Time
VGS = 0
VDS = 25V
f = 1.0MHz
VDD = 15V, RL= 23Ω, RG = 50Ω
ID = 1.0A, VGEN = 10V
60
25
5
10
ns
10
pF
Notes
(2) Pulse Width
≤
300us,
δ ≤
2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 8418
Issue 1
Page 2 of 3
N-CHANNEL ENHANCEMENT
MODE MOSFET
VN10KE
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
)
)
0
0
0.48 (0.019)
0.41 (0.016)
dia.
2.54 (0.100)
Nom.
3
2
1
TO-52 PACKAGE (TO-206AC)
Underside View
Pin 1 - Source
Pin 2 - Gate
Pin 3 - Case & Drain
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
12.7 (0.500) 3.81 (0.150)
min.
2.93 (0.115)
1
7
2
1
.
.
0
0
(
(
3
2
3
3
.
.
5
4
)
0
0
5
.
.
n
0
i
(
m
7
.
2
1
Website:
http://www.semelab-tt.com
Document Number 8418
Issue 1
Page 3 of 3
