VTP Process Photodiodes
VTP1188SH
PACKAGE DIMENSIONS
inch (mm)
CASE 12 LENSED CERAMIC
CHIP ACTIVE AREA: .017 in
2
(11 mm
2
)
ABSOLUTE MAXIMUM RATINGS
PRODUCT DESCRIPTION
Large area planar silicon photodiode mounted
on a two lead ceramic substrate. A clear molded
lens is used to increase sensitivity. Low junction
capacitance permits fast response time.
Storage Temperature:
Operating Temperature:
-20°C to 75°C
-20°C to 75°C
RoHS Compliant
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
(See also VTP curves, pages 45-46)
SYMBOL
I
SC
TC I
SC
I
SC
V
OC
TC V
OC
I
D
R
SH
TC R
SH
C
J
λ
range
λ
p
S
R
CHARACTERISTIC
Short Circuit Current
I
SC
Temperature Coefficient
Short Circuit Current
Open Circuit Voltage
V
OC
Temperature Coefficient
Dark Current
Shunt Resistance
R
SH
Temperature Coefficient
Junction Capacitance
Spectral Application Range
Spectral Response - Peak
Sensitivity
@ Peak
TEST CONDITIONS
Min.
H = 100 fc, 2850 K
2850 K
100 µW/cm
2
, 880 nm
H = 100 fc, 2850 K
2850 K
H = 0, VR = 10 mV
H = 0, V = 10 mV
H = 0, V = 10 mV
H = 0, V =0 V
400
925
.55
13
.33
-2.0
3
67
-11
.18
.30
1100
30
VTP11188SH
Typ.
200
.20
25
Max.
UNITS
µA
%/°C
µA
mV
mV/°C
nA
GΩ
%/°C
nF
nm
nm
A/W
Excelitas Technologies,
22001 Dumberry, Vaudreuil, QC, Canada J7V 8P7
Phone: 877-734-6786 Fax: 450-424-3413
www.excelitas.com
51
单片机
