VTS Process Photodiodes
VTS PROCESS
LOW CAPACITANCE, LARGE AREA PHOTODIODE
FEATURES
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Visible to IR spectral range
Excellent QE - 400 to 1100 nm
Guaranteed 400 nm response
Response @ 940 nm, 0.60 A/W, typical
Useable with visible and IR LEDs
Better than 1% linearity over four decades of illumination
Moderate shunt resistance
Low capacitance
Fast response
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Choice of three styles:
bare chip
6" flying leads
1" anode buss wire
Large area cells
Solderable contacts
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PRODUCT DESCRIPTION
This series of planar, P on N, large area silicon photodiodes is
characterized for use in the photovoltaic (unbiased) mode. Their
excellent speed and broadband sensitivity makes them ideal for
detecting light from a variety of sources such as LEDs, IREDs,
flashtubes, incandescent lamps, lasers, etc. Improved shunt
resistance minimizes amplifier offset and drift in high gain
systems. The solderable contact system on these photodiodes
provides a cost effective design solution for many applications.
Part Numbering System For VTS Process Unmounted Cells
VTS__XX
Last two digits identify
chip size and process
VTS20XX
VTS30XX
Bare chip with no wires or coating.
Chip with red and black AWG#30, insulated, flexible wires
soldered to the contacts.
Chip with a buss wire soldered to the topside contact.
VTS31XX
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