WS128K32-XXX
128Kx32 SRAM MODULE, SMD 5962-93187 & 5962-95595
FEATURES
Access Times of 15, 17, 20, 25, 35, 45, 55ns
MIL-STD-883 Compliant Devices Available
Packaging
• 66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP
(Package 400)
• 68 lead, 40mm CQFP (G4T)
1
, 3.56mm (0.140") (Package
502)
• 68 lead, 22.4mm CQFP (G2U), 3.56mm (0.140"),
(Package 510)
• 68 lead, 22.4mm (0.880") square, CQFP (G2L), 5.08mm
(0.200") high, (Package 528)
Organized as 128Kx32; User Configurable as 256Kx16 or
512Kx8
Commercial, Industrial and Military Temperature Ranges
5 Volt Power Supply
Low Power CMOS
TTL Compatible Inputs and Outputs
Built in Decoupling Caps and Multiple Ground Pins for Low
Noise Operation
Weight:
WS128K32-XG2UX - 8 grams typical
WS128K32-XG2LX - 8 grams typical
WS128K32-XH1X - 13 grams typical
WS128K32-XG4TX
1
- 20 grams typical
Devices are upgradeable to 512Kx32
This product is subject to change without notice.
FIGURE 1 – PIN CONFIGURATION FOR WS128K32N-XH1X
Top View
1
I/O
8
I/O
9
I/O
10
A
13
A
14
A
15
A
16
NC
I/O
0
I/O
1
I/O
2
11
22
12
WE
2
#
CS
2
#
GND
I/O
11
A
10
A
11
A
12
V
CC
CS
1
#
NC
I/O
3
33
23
I/O
15
I/O
14
I/O
13
I/O
12
OE#
NC
WE
1
#
I/O
7
I/O
6
I/O
5
I/O
4
I/O
24
I/O
25
I/O
26
A
6
A
7
NC
A
8
A
9
I/O
16
I/O
17
I/O
18
44
34
V
CC
CS
4
#
WE
4
#
I/O
27
A
3
A
4
A
5
WE
3
#
CS
3
#
GND
I/O
19
55
45
I/O
31
I/O
30
I/O
29
I/O
28
A
0
A
1
A
2
I/O
23
I/O
22
I/O
21
I/O
20
66
56
Pin Description
I/O
0-31
A
0-16
WE
1-4
#
CS
1-4
#
OE#
V
CC
GND
NC
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
Not Connected
Block Diagram
WE#1 CS#1
WE#2 CS#2
WE#3 CS#3
WE#4 CS#4
OE#
A0-16
128K x 8
128K x 8
128K x 8
128K x 8
8
8
8
8
I/O 0-7
I/O 8-15
I/O 16-23
I/O 24-31
Microsemi Corporation reserves the right to change products or specifications without notice.
September 2010
Rev. 18
© 2010 Microsemi Corporation. All rights reserved.
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WS128K32-XXX
FIGURE 2 – PIN CONFIGURATION FOR WS128K32-XG4TX
1
Top View
NC
A
0
A
1
A
2
A
3
A
4
A
5
CS
1
#
GND
CS
3
#
WE
1
#
A
6
A
7
A
8
A
9
A
10
V
CC
Pin Description
I/O
0-31
A
0-16
WE
1-4
#
CS
1-4
#
OE#
V
CC
GND
NC
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
Not Connected
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
I/O
0
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
GND
I/O
8
I/O
9
I/O
10
I/O
11
I/O
12
I/O
13
I/O
14
I/O
15
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
I/O
16
I/O
17
I/O
18
I/O
19
I/O
20
I/O
21
I/O
22
I/O
23
GND
I/O
24
I/O
25
I/O
26
I/O
27
I/O
28
I/O
29
I/O
30
I/O
31
Block Diagram
WE#
OE#
A
0-16
CS
1
#
CS
2
#
CS
3
#
CS
4
#
128K X 8
128K X 8
128K X 8
128K X 8
8
A
16
CS
2
#
OE#
CS
4
#
NC
NC
NC
NC
NC
NC
NC
V
CC
A
11
A
12
A
13
A
14
A
15
8
8
8
I/O
0 - 7
I/O
8 - 15
I/O
16 - 23
I/O
24 - 31
Note 1: Package Not Recommended For New Design
FIGURE 3 – PIN CONFIGURATION FOR WS128K32-XG2UX AND WS128K32-XG2LX
Top View
NC
A
0
A
1
A
2
A
3
A
4
A
5
CS
3
#
GND
CS
4
#
WE
1
#
A
6
A
7
A
8
A
9
A
10
V
CC
Pin Description
I/O
0-31
A
0-16
WE
1-4
#
CS
1-4
#
OE#
V
CC
GND
NC
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
Not Connected
9 8 7 6 5 4
I/O
0
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
GND
I/O
8
I/O
9
I/O
10
I/O
11
I/O
12
I/O
13
I/O
14
I/O
15
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
3 2 1 68 67 66 65 64 63 62 61
I/O
16
I/O
17
I/O
18
I/O
19
I/O
20
I/O
21
I/O
22
I/O
23
GND
I/O
24
I/O
25
I/O
26
I/O
27
I/O
28
I/O
29
I/O
30
I/O
31
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
Block Diagram
WE#1 CS#1
WE#2 CS#2
WE#3 CS#3
WE#4 CS#4
OE#
A0-16
128K x 8
128K x 8
128K x 8
128K x 8
V
CC
A
11
A
12
A
13
A
14
A
15
A
16
CS
1
#
OE#
CS
2
#
NC
WE
2
#
WE
3
#
WE
4
#
NC
NC
NC
8
8
8
8
I/O 0-7
I/O 8-15
I/O 16-23
I/O 24-31
Note 1: Package Not Recommended For New Design
Microsemi Corporation reserves the right to change products or specifications without notice.
September 2010
Rev. 18
© 2010 Microsemi Corporation. All rights reserved.
2
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WS128K32-XXX
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-55
-65
-0.5
-0.5
Max
+125
+150
V
CC
+0.5
150
7.0
Unit
°C
°C
V
°C
V
CS
H
L
L
L
OE
X
L
X
H
WE
X
H
L
H
TRUTH TABLE
Mode
Standby
Read
Write
Out Disable
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
CAPACITANCE
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp (Mil)
Symbol
V
CC
V
IH
V
IL
T
A
Min
4.5
2.2
-0.5
-55
Max
5.5
V
CC
+ 0.3
+0.8
+125
Unit
V
V
V
°C
Parameter
OE# capacitance
WE
1-4
# capacitance
HIP (PGA) H1
CQFP G4T
CQFP G2U/G2L
CS
1-4
# capacitance
Data# I/O capacitance
Address input capacitance
T
A
= +25°C
Symbol
C
OE
C
WE
Conditions
V
IN
= 0V, f = 1.0 MHz
V
IN
= 0V, f = 1.0 MHz
Max
50
20
50
20
20
20
50
Unit
pF
pF
C
CS
C
I/O
C
AD
V
IN
= 0V, f = 1.0 MHz
V
I/O
= 0V, f = 1.0 MHz
V
IN
= 0V, f = 1.0 MHz
pF
pF
pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
V
CC
= 5.0V, V
SS
= 0V, -55°C
≤
T
A
≤
+125°C
Parameter
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
Output High Voltage
Sym
I
LI
I
LO
I
CC
I
SB
V
OL
V
OH
Conditions
Min
V
CC
= 5.5, V
IN
= GND to V
CC
CS# = V
IH
, OE# = V
IH
, V
OUT
= GND to V
CC
CS# = V
IL
, OE# = V
IH
, f = 5MHz, V
CC
= 5.5
CS# = V
IH
, OE# = V
IH
, f = 5MHz, V
CC
= 5.5
I
OL
= 8mA, V
CC
= 4.5
I
OH
= -4.0mA, V
CC
= 4.5
-15
Max
10
10
600
80
0.4
2.4
2.4
-17
Min
Max
10
10
600
80
0.4
2.4
-20
Min
Max
10
10
600
80
0.4
2.4
-25
Min
Max
10
10
600
60
0.4
Units
μA
μA
mA
mA
V
V
Parameter
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
Output High Voltage
Sym
I
LI
I
LO
I
CC
I
SB
V
OL
V
OH
Conditions
Min
V
CC
= 5.5, V
IN
= GND to V
CC
CS# = V
IH
, OE# = V
IH
, V
OUT
= GND to V
CC
CS# = V
IL
, OE# = V
IH
, f = 5MHz, V
CC
= 5.5
CS# = V
IH
, OE# = V
IH
, f = 5MHz, V
CC
= 5.5
I
OL
= 8mA, V
CC
= 4.5
I
OH
= -4.0mA, V
CC
= 4.5
-35
Max
10
10
600
60
0.4
2.4
2.4
-45
Min
Max
10
10
600
60
0.4
2.4
-55
Min
Max
10
10
600
60
0.4
Units
μA
μA
mA
mA
V
V
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
DATA RETENTION CHARACTERISTICS (For WS128K32L-XXX Only)
-55°C
≤
T
A
≤
+125°C, -40°C
≤
T
A
≤
+85°C
Characteristic
Data Retention Voltage
Data Retention Quiescent Current
Chip Disable to Data Retention Time (1)
Operation Recovery Time (1)
NOTE: Parameter guaranteed, but not tested.
Sym
V
CC
I
CCDR
T
CDR
T
R
Conditions
V
CC
= 2.0V
CS
³
V
CC
-0.2V
V
IN
³
V
CC
-0.2V
or V
IN
0.2V
Min
2
-
0
TRC
Typ
-
1
-
Max
-
2
-
-
Units
V
mA
ns
ns
Microsemi Corporation reserves the right to change products or specifications without notice.
September 2010
Rev. 18
© 2010 Microsemi Corporation. All rights reserved.
3
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WS128K32-XXX
AC CHARACTERISTICS
V
CC
= 5.0V, GND = 0V, -55°C
≤
T
A
≤
+125°C
Parameter
Read Cycle
Read Cycle Time
Address Access Time
Output Hold from Address Change
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
Symbol
t
RC
t
AA
t
OH
t
ACS
t
OE
t
CLZ
1
t
OLZ
1
t
CHZ
1
t
OHZ
1
Min
15
0
15
10
3
0
12
12
3
0
12
12
-15
Max
15
0
17
10
3
0
12
12
Min
17
-17
Max
17
0
20
12
3
0
12
12
Min
20
-20
Max
20
0
25
15
3
0
15
15
Min
25
-25
Max
25
0
35
20
3
0
20
20
Min
35
-35
Max
35
0
45
25
3
0
20
20
Min
45
-45
Max
45
0
55
30
Min
55
-55
Max
55
ns
ns
ns
ns
ns
ns
ns
ns
ns
Units
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS
V
CC
= 5.0V, GND = 0V, -55°C
≤
T
A
≤
+125°C
Parameter
Write Cycle
Write Cycle Time
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Address Hold Time
Output Active from End of Write
Write Enable to Output in High Z
Data Hold Time
Symbol
t
WC
t
CW
t
AW
t
DW
t
WP
t
AS
t
AH
t
OW
1
t
WHZ
1
t
DH
Min
15
14
14
10
14
0
0
3
10
0
0
-15
Max
Min
17
14
15
10
14
0
0
3
10
0
-17
Max
Min
20
15
15
12
15
0
0
3
12
0
-20
Max
Min
25
20
20
15
20
0
0
3
15
0
-25
Max
Min
35
25
25
20
25
0
0
4
20
0
-35
Max
Min
45
30
30
25
30
0
0
4
25
0
-45
Max
Min
55
45
45
25
45
0
0
4
25
-55
Max
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1. This parameter is guaranteed by design but not tested.
FIGURE. 4 – AC TEST CIRCUIT
AC Test Conditions
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Notes:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z0 = 75
Ω.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
Typ
V
IL
= 0, V
IH
= 3.0
5
1.5
1.5
Unit
V
ns
V
V
Microsemi Corporation reserves the right to change products or specifications without notice.
September 2010
Rev. 18
© 2010 Microsemi Corporation. All rights reserved.
4
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WS128K32-XXX
FIGURE 5 – TIMING WAVEFORM - READ CYCLE
CS#
OE#
READ CYCLE 2, (CS# = OE# = V
IL
, WE# = V
IH
)
READ CYCLE 2 (WE# = V
IH
)
FIGURE 6 – WRITE CYCLE - WE# CONTROLLED
CS#
WE#
WRITE CYCLE 2, CS# CONTROLLED
FIGURE 7 – WRITE CYCLE - CS# CONTROLLED
CS#
WE#
WRITE CYCLE 2, CS# CONTROLLED
Microsemi Corporation reserves the right to change products or specifications without notice.
September 2010
Rev. 18
© 2010 Microsemi Corporation. All rights reserved.
5
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
