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WW6004

Silicon Power Rectifier Diode, 40Amp

厂商名称:New Jersey Semiconductor

厂商官网:http://www.njsemi.com

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,
Li
ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
WW5906, WW5907,
WW5980 thru WW6005
Silicon Power Rectifier Diode, 40Amp
Features:
High Surge Current Capability
High Voltage Available
Designed for a Wide Range of Applications
Available in Anode-to-Case or Cathode-to-Case Style
Ratings and Characteristics:
Average Forward Current (T
c
= +140°C Max), I
F
(
AV)
Maximum Forward Surge Current, I
F
SM
50Hz
60Hz
Fusing Current, I
2
t
50Hz
60Hz . . .
Fusing Current,
Maximum Reverse Recovery Voltage Range, V
RRM
Voltage Ratings:
VRRM-Max
Repetitive Peak
Reverse Volt.
(V)
Tj=-65°to+150°C
VRSM-MBX
Non-Repetitive Peak
Reverse Voltage
(V) t
p
< 5ms
Tj = +25°to+150°C
V
R
-Max.
Direct Reverse
Voltage
(V)
Tj =-65" to +150°C
V
R(SR)
40A
480A
500A
. . . 1150A
2
s
. . . 1050A
2
s
16000AVs
50 to 1600V
Cathode
to Case
Anode
to Case
Minimum Avalanche
Voltage
(V)
l
RM
-Max
Reverse Current
Rated V
RRM
(mA)
Tj = +25°C
-
-
-
-
Tj = +150°C
15
5980
5982
5986
5988
5990
5992
5994
5998
6002
5906
6004
5981
5983
5987
5989
50
100
200
300
400
500
600
800
100
200
300
450
500
600
720
960
50
100
200
300
400
500
600
800
15
15
15
15
9
9
9
9
9
9
5991
5993
5995
5999
6003
5907
6005
500
600
725
960
1000
1200
1600
1200
1400
1700
1000
1200
1600
1150
1350
1700
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Electrical Specifications:
Parameter
Maximum Average Forward Current
Maximum Peak One-Cycle
Non-Repetitive Surge Current
Symbol
!p (AV)
Test Conditions
180° sinusoidal condition, T
c
= +140°C Max
Half cycle 50Hz sine wave
Following any rated
or 8ms rectangular pulse
load condition and
with rated VRRM
Half cycle 60Hz sine wave
applied
at 5ms rectangular pulse
Half cycle 50Hz sine wave Following any rated
or 6ms rectangular pulse
load condition and
Half cycle 60Hz sine wave with V
RRM
applied
following surge = 0
at 3ms rectangular pulse
Rating
40
480
500
570
586
Unit
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
AVt
V
V
mO
!FSM
Maximum I
2
t for Fusing
I
2
t
t = 10ms
t = 8.3ms
Maximum I
2
t for Individual Device
Fusing
Maximum
\yt
Maximum Peak Forward Voltage
Maximum Value of Threshold
Voltage
Maximum Value of Forward Slope
Resistance
t = 10ms
With rated VRRM ap-
plied following surge
With V
RRM
= 0 fol-
lowing surge
1150
1050
1600
1450
t = 8.3ms
iVt
VFM
t = 0.1 to 10ms, VRRM = 0 following surge
I
F (AV)
= 4QA (125 peak), Tj = +25°C
Tj = +100°C
Tj = +100°C
16000
1.30
0.69
3.79
VM (TO)
r
t
Thermal-Mechanical Specifications:
Parameter
Maximum Operation Junction Temperature
Maximum Storage Temperature
Maximum Internal Thermal Resistance
Junction-to-Case
Thermal Resistance, Case-to-Sink
Mounting Torque
Approximate Weight
Symbol
Test Conditions
Rating
-65to + 190
-65to+ 190
DC operation
Mounting surface flat, smooth and
greased
Non-lubricated threads
1.00
0.25
Unit
°C
°C
K/W
K/W
Tj
T
stg
RthJC
R
thCS
T
2.3-3.4
(20 - 30)
17(0.8)
m»N
(in.lb)
9(oz)
Wt
.687
(17.4)
Max
.667 (16.9) Dia Max
.375 (9.55) Max
t
1.288
(32.71)
Max
A
f
-.140 (3.65) Dia Max
.450
(11.4)
Max
.200 (5.08) Max
.453
(11.5)
Max
1/4-28 UNF-2A
1
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