This product complies with the RoHS Directive (EU 2002/95/EC).
Composite Transistors
XN04312G
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For switching/digital circuits
■
Features
■
Package
•
Code
Mini6-G3
•
Pin Name
■
Basic Part Number
•
UNR2212
+
UNR2112
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
Tr1
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Collector current
Tr2
Collector-base voltage
(Emitter open)
V
CBO
V
CEO
I
C
Collector-emitter voltage
(Base open)
Collector current
Overall
Total power dissipation
Junction temperature
Storage temperature
P
T
T
j
Ma
int
en
an
ce
/D
isc
on
tin
T
stg
d
pla inc
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.
1: Collector (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Rating
50
50
Unit
V
V
M
ain
Di
sc te
on na
tin nc
ue e/
d
•
Two elements incorporated into one package
(Transistors with built-in resistor)
•
Reduction of the mounting area and assembly cost by one half
(C2)
4
100
mA
V
V
−50
−50
R1
22 kΩ
■
Marking Symbol: 7T
■
Internal Connection
(B1)
5
(E1)
6
R2
22 kΩ
Tr2
Tr1
R2
22 kΩ
R1
22 kΩ
−100
300
150
mA
°C
mW
°C
3
(E2)
2
(B2)
1
(C1)
ue
−55
to
+150
Publication date: March 2009
SJJ00475AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
XN04312G
■
Electrical Characteristics
T
a
=
25°C
±
3°C
•
Tr1
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
Conditions
I
C
=
10
µA,
I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
60
Min
50
50
0.1
0.5
0.2
Typ
Max
Unit
V
V
µA
µA
mA
0.25
V
V
0.2
V
+30%
1.2
Output voltage low-level
Input resistance
V
OL
R
1
f
T
Resistance ratio
R
1
/ R
2
Transition frequency
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
•
Tr2
Parameter
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
V
CE(sat)
V
OH
V
OL
R
1
f
T
Resistance ratio
isc
R
1
/ R
2
Common characteristics chart
500
Total power dissipation P
T
(mW)
400
300
200
100
0
0
Ma
int
en
P
T
T
a
40
80
an
ce
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
120
Ambient temperature T
a
(
°C
)
2
/D
Transition frequency
160
d
pla inc
Pl
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life
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.
−30%
0.8
22
kΩ
1.0
V
CB
=
10 V, I
E
= −2
mA, f
=
200 MHz
150
MHz
Conditions
Min
−50
−50
Typ
Max
Unit
V
I
C
= −10 µA,
I
E
=
0
I
C
= −2
mA, I
B
=
0
V
V
CB
= −50
V, I
E
=
0
V
CE
= −50
V, I
B
=
0
V
EB
= −6
V, I
C
=
0
−
0.1
−
0.5
−
0.2
µA
µA
V
V
mA
V
CE
= −10
V, I
C
= −5
mA
60
I
C
= −10
mA, I
B
= −
0.3 mA
−
0.25
−
0.2
1.2
V
CC
= −5
V, V
B
= −
0.5 V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −2.5
V, R
L
=
1 kΩ
−4.9
V
−30%
0.8
22
+30%
kΩ
1.0
80
V
CB
= −10
V, I
E
=
1 mA, f
=
200 MHz
MHz
SJJ00475AED
M
ain
Di
sc te
on na
tin nc
ue e/
d
Collector-emitter saturation voltage
Output voltage high-level
V
CE(sat)
V
OH
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 kΩ
4.9
on
tin
ue
This product complies with the RoHS Directive (EU 2002/95/EC).
XN04312G
Characteristics charts of Tr1
I
C
V
CE
T
a
=
25°C
I
B
=
1.0 mA
0.9 mA
0.8 mA
120
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
100
I
C
/ I
B
=
10
400
h
FE
I
C
V
CE
=
10 V
160
Collector current I
C
(mA)
0.7 mA
0.6 mA
0.5 mA
0.4 mA
10
Forward current transfer ratio h
FE
300
T
a
=
75°C
M
ain
Di
sc te
on na
tin nc
ue e/
d
80
1
200
0.3 mA
25°C
−25°C
25°C
T
a
=
75°C
40
0.2 mA
0.1
−25°C
100
0.1 mA
0
0
2
4
6
8
10
12
Collector-emitter voltage V
CE
(V)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
5
f
=
1 MHz
I
E
=
0
T
a
=
25°C
4
3
2
1
ue
0
0.1
1
10
100
Ma
int
en
an
ce
/D
isc
on
Collector-base voltage V
CB
(V)
d
pla inc
Pl
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sta
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.jp rm
.
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.
0.01
0.1
1
10
100
0
1
10
100
1 000
Collector current I
C
(mA)
Collector current I
C
(mA)
I
O
V
IN
V
IN
I
O
10
4
V
O
=
5 V
T
a
=
25°C
100
V
O
=
0.2 V
T
a
=
25°C
Output current I
O
(µA)
10
2
Input voltage V
IN
(V)
10
3
10
1
10
0.1
1
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1
10
100
tin
Input voltage V
IN
(V)
Output current I
O
(mA)
SJJ00475AED
3
This product complies with the RoHS Directive (EU 2002/95/EC).
XN04312G
Characteristics charts of Tr2
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
−160
I
B
= −1.0
mA
−
0.9mA
−
0.8mA
−
0.7mA
−
0.6mA
−
0.5mA
−80
−
0.4mA
−
0.3mA
−
0.2mA
−
0.1mA
T
a
=
25°C
V
CE(sat)
I
C
−100
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
= −10
V
Collector current I
C
(mA)
−120
−10
Forward current transfer ratio h
FE
300
M
ain
Di
sc te
on na
tin nc
ue e/
d
200
25°C
T
a
= 75°C
−40
−1
T
a
= 75°C
25°C
−25°C
−
0.1
100
−25°C
0
0
−2
−4
−6
−8
−10
−12
−
0.01
−
0.1
Collector-emitter voltage V
CE
(V)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
5
f
=
1 MHz
I
E
=
0
T
a
=
25°C
4
3
2
1
ue
0
−
0.1
−1
−10
−100
4
Ma
int
en
an
ce
/D
isc
on
Collector-base voltage V
CB
(V)
d
pla inc
Pl
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pla m d m es
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co L a d t ty
du
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ct
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.
−1
−10
−100
0
−1
−10
−100
−1
000
Collector current I
C
(mA)
Collector current I
C
(mA)
I
O
V
IN
V
IN
I
O
−10
4
V
O
=
−5
V
T
a
= 25°C
−100
V
O
= −
0.2 V
T
a
= 25°C
Output current I
O
(µA)
−10
2
Input voltage V
IN
(V)
−10
3
−10
−1
−10
−
0.1
−1
−
0.4
−
0.6
−
0.8
−1.0
−1.2
−1.4
−
0.01
−
0.1
−1
−10
−100
tin
Input voltage V
IN
(V)
Output current I
O
(mA)
SJJ00475AED
8°
3
4
Mini6-G3
Ma
int
en
an
ce
0.50
−
0.05
0.30
−
0.05
+0.10
+0.10
2
/D
(0.95)
5
isc
+0.20
1.9
±0.1
on
2.90
−
0.05
tin
(0.95)
1
6
ue
This product complies with the RoHS Directive (EU 2002/95/EC).
SJJ00475AED
+0.2
−
0.1
+0.25
−
0.05
+0.3
−
0.1
+0.2
−
0.3
±0.2
M
ain
Di
sc te
on na
tin nc
ue e/
d
0.13
−
0.02
+0.05
Unit: mm
d
pla inc
Pl
ea
ne lud
se
pla m d m es
fol
htt
0
vi
to
it
0.1 1.1
ne ain ain
(0.65)
s
1.50
d d te te low
p:/ fo
/w llo
1.1
dis isc nan nan ing
ww wi co on ce c fo
2.8
u
.se ng ntin tin ty e ty
6°
r
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
0.4
/ ion
.
XN04312G
5
