This product complies with the RoHS Directive (EU 2002/95/EC).
Composite Transistors
XN05601G
Silicon PNP epitaxial planar type (Tr1)
Silicon NPN epitaxial planar type (Tr2)
For general amplification
■
Features
■
Package
•
Code
Mini6-G3
•
Pin Name
■
Basic Part Number
•
2SB0709A
+
2SD0601A
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Tr1
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Emitter-base voltage
(Collector open)
Collector current
Peak collector current
I
CP
Tr2
Collector-base voltage
(Emitter open)
V
CBO
V
CEO
V
EBO
I
C
Peak collector current
ce
/D
Collector current
isc
Emitter-base voltage
(Collector open)
tin
Collector-emitter voltage
(Base open)
I
CP
P
T
T
j
Overall
Total power dissipation
Junction temperature
Storage temperature
T
stg
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.
1: Collector (Tr1)
2: Emitter (Tr2)
3: Collector (Tr2)
4: Base (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
M
ain
Di
sc te
on na
tin nc
ue e/
d
•
Two elements incorporated into one package
•
Reduction of the mounting area and assembly cost by one half
Rating
−60
−50
−7
Unit
V
V
(B2)
4
V
−100
−200
60
50
7
Tr2
mA
mA
V
V
3
(C2)
■
Marking Symbol: 4N
■
Internal Connection
(B1)
5
(E1)
6
Tr1
2
(E2)
1
(C1)
ue
on
V
100
200
300
150
mA
mA
°C
an
mW
°C
Ma
int
en
−55
to
+150
Publication date: March 2009
SJJ00498AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
XN05601G
■
Electrical Characteristics
T
a
=
25°C
±
3°C
•
Tr1
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
f
T
Conditions
I
C
= −10 µA,
I
E
=
0
I
C
= −2
mA, I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
CB
= −20
V, I
E
=
0
V
CE
= −10
V, I
B
=
0
V
CE
= −10
V, I
C
= −2
mA
160
Min
−60
−50
−7
−
0.1
−100
460
−
0.3
80
2.7
−
0.5
Typ
Max
Unit
V
V
V
µA
µA
V
MHz
pF
Collector output capacitance
(Common base, input open circuited)
C
ob
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
•
Tr2
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
f
T
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
V
CE(sat)
C
ob
Collector output capacitance
(Common base, input open circuited)
500
Total power dissipation P
T
(mW)
400
300
200
100
0
0
Ma
int
en
40
80
an
P
T
T
a
ce
Common characteristics chart
120
Ambient temperature T
a
(
°C
)
3
/D
isc
160
on
tin
ue
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
d
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co L a d t ty
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ct
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/ ion
.
Conditions
Min
60
Typ
Max
Unit
V
I
C
=
10
µA,
I
E
=
0
I
C
= 2
mA, I
B
=
0
I
E
=
10
µA,
I
C
=
0
50
7
V
V
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
0.1
µA
µA
V
100
V
CE
=
10 V, I
C
=
2 mA
160
460
0.3
I
C
= 100
mA, I
B
= 10
mA
0.1
V
CB
=
10 V, I
E
= −2
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
150
3.5
MHz
pF
SJJ00498AED
M
ain
Di
sc te
on na
tin nc
ue e/
d
Collector-emitter saturation voltage
Transition frequency
V
CE(sat)
I
C
= −100
mA, I
B
= −10
mA
V
CB
= −10
V, I
E
=
1 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
This product complies with the RoHS Directive (EU 2002/95/EC).
XN05601G
Characteristics charts of Tr1
I
C
V
CE
−60
I
B
=
−300 µA
−250 µA
−40
−200 µA
−150 µA
T
a
=
25°C
−60
V
CE
=
−5
V
T
a
= 25°C
−50
I
C
I
B
−400
−350
−300
−250
−200
−150
−100
−50
I
B
V
BE
V
CE
=
– 5 V
T
a
=
25°C
−50
Collector current I
C
(mA)
Collector current I
C
(mA)
−40
0
0
−4
−8
−12
−16
Collector-emitter voltage V
CE
(V)
I
C
V
BE
Collector-emitter saturation voltage V
CE(sat)
(V)
−240
V
CE
= −5
V
Collector current I
C
(mA)
T
a
=
75°C
−25°C
−1
T
a
=
75°C
−160
25°C
Forward current transfer ratio h
FE
−200
25°C
−120
−10
−1
−80
−10
−2
−40
ue
0
0
−0.4
−0.8
−1.2
−1.6
−2.0
−10
−3
−1
Base-emitter voltage V
BE
(V)
ce
/D
f
T
I
E
an
Ma
int
en
140
V
CB
= −10
V
T
a
=
25°C
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
160
Transition frequency f
T
(MHz)
Noise figure NF (dB)
120
100
80
60
40
20
0
10
−1
1
10
10
2
Emitter current I
E
(mA)
d
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co L a d t ty
du
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ct
e
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cy
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sta
co fo
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.
0
0
−100
−200
−300
−400
0
0
−0.4
−0.8
−1.2
−1.6
M
ain
Di
sc te
on na
tin nc
ue e/
d
−20
−100 µA
−20
−10
−50 µA
−10
−30
−30
Base current I
B
(
µA
)
Base current I
B
(
µA
)
Base-emitter voltage V
BE
(V)
V
CE(sat)
I
C
h
FE
I
C
−10
I
C
/ I
B
=
10
600
V
CE
= −10
V
500
400
T
a
=
75°C
−25°C
300
25°C
−25°C
200
100
−10
−10
2
−10
3
0
−1
−10
−10
2
−10
3
tin
Collector current I
C
(mA)
Collector current I
C
(mA)
isc
on
C
ob
V
CB
NF
I
E
8
7
6
5
4
3
2
1
f
=
1 MHz
I
E
=
0
T
a
=
25°C
6
5
V
CB
= −5
V
f
=
1 kHz
R
g
=
2 kΩ
T
a
=
25°C
4
3
2
1
0
−1
−10
−10
2
0
10
−2
10
−1
1
10
Collector-base voltage V
CB
(V)
Emitter current I
E
(mA)
SJJ00498AED
3
This product complies with the RoHS Directive (EU 2002/95/EC).
XN05601G
NF
I
E
20
18
16
V
CB
= −5
V
R
g
=
50 kΩ
T
a
=
25°C
10
2
h parameter
I
E
V
CE
= −5
V
f
=
270 Hz
T
a
=
25°C
h parameter
V
CE
I
E
=
2 mA
f
=
270 Hz
T
a
=
25°C
h
fe
h
fe
10
2
Noise figure NF (dB)
14
h parameter
12
10
8
6
4
2
f
=
100 Hz
1 kHz
h
oe
(µS)
h parameter
h
oe
(µS)
10
M
ain
Di
sc te
on na
tin nc
ue e/
d
10
10 kHz
h
ie
(kΩ)
h
re
(× 10
−4
)
h
ie
(kΩ)
0
10
−1
1
10
Emitter current I
E
(mA)
Characteristics charts of Tr2
I
C
V
CE
60
T
a
=
25°C
I
B
=
160
µA
50
Collector current I
C
(mA)
Collector current I
C
(mA)
140
µA
120
µA
40
100
µA
80
µA
60
µA
40
µA
20
µA
30
20
10
0
2
4
6
8
10
tin
0
on
Collector-emitter voltage V
CE
(V)
ce
I
C
V
BE
an
Collector-emitter saturation voltage V
CE(sat)
(V)
240
Ma
int
en
V
CE
=
10 V
200
10
Forward current transfer ratio h
FE
Collector current I
C
(mA)
160
120
T
a
=
75°C
80
25°C
−25°C
40
0
0
0.4
0.8
1.2
1.6
2.0
Base-emitter voltage V
BE
(V)
5
d
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du
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ct
e
life
an ut
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cy
on es
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sta
co fo
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.
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/ ion
.
1
10
−1
1
10
h
re
(× 10
−4
)
1
−10
−1
−1
−10
Emitter current I
E
(mA)
Collector-emitter voltage V
CE
(V)
I
C
I
B
I
B
V
BE
240
1 200
V
CE
=
10 V
T
a
=
25°C
V
CE
=
10 V
T
a
=
25°C
200
1 000
Base current I
B
(
µA
)
160
800
120
600
80
400
40
200
ue
0
0
0
200
400
600
800
1 000
0
0.2
0.4
0.6
0.8
1.0
Base current I
B
(
µA
)
Base-emitter voltage V
BE
(V)
/D
isc
V
CE(sat)
I
C
h
FE
I
C
10
2
I
C
/ I
B
=
10
600
V
CE
=
10 V
500
400
T
a
=
75°C
25°C
1
300
−25°C
200
10
−1
25°C
T
a
=
75°C
−25°C
100
10
−2
10
−1
1
10
10
2
0
10
−1
1
10
10
2
Collector current I
C
(mA)
Collector current I
C
(mA)
SJJ00498AED
Transition frequency f
T
(MHz)
180
240
300
120
60
0
−10
−1
−1
f
T
I
E
Emitter current I
E
(mA)
Ma
int
en
−10
an
ce
/D
−10
2
V
CB
=
10 V
T
a
=
25°C
isc
80
on
40
tin
Noise voltage NV (mV)
120
160
240
0
10
ue
V
CE
=
10 V
G
V
=
80 dB
200
Function
=
FLAT
T
a
=
25°C
10
2
This product complies with the RoHS Directive (EU 2002/95/EC).
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
Collector current I
C
(
µA
)
10
3
SJJ00498AED
NV
I
C
R
g
=
100 kΩ
22 kΩ
M
ain
Di
sc te
on na
tin nc
ue e/
d
4.7 kΩ
XN05601G
5
