Composite Transistors
XN6537
Silicon NPN epitaxial planer transistor
Unit: mm
For wide-band low-noise amplification
0.65±0.15
6
+0.2
2.8
–0.3
1.5
–0.05
+0.25
0.65±0.15
1
0.3
–0.05
0.95
2.9
–0.05
q
q
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
1.9±0.1
+0.2
5
2
0.95
4
3
q
2SC3110
×
2 elements
1.1
–0.1
0.4±0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Rating
Emitter to base voltage
of
element Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
15
12
2.5
30
50
300
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
1 : Collector (Tr1)
2 : Base (Tr1)
3 : Collector (Tr2)
4 : Base (Tr2)
5 : Emitter (Tr2)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol:
7H
Internal Connection
6
5
4
Tr1
1
2
3
Tr2
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer h
FE
ratio
Transition frequency
Collector output capacitance
Forward transfer gain
Power gain
Noise figure
*1
(Ta=25˚C)
Symbol
I
CBO
I
EBO
h
FE
h
FE
(small/large)
*1
f
T
C
ob
| S
21e
|
2
GUM
NF
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 2V, I
C
= 0
V
CE
= 10V, I
C
= 10mA
V
CE
= 10V, I
C
= 10mA
V
CE
= 10V, I
C
= 10mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 10V, I
C
= 20mA, f = 0.8GHz
V
CE
= 10V, I
C
= 20mA, f = 0.8GHz
V
CE
= 10V, I
C
= 5mA, f = 0.8GHz
12
14
1.3
40
0.5
0.99
4.5
1.2
GHz
pF
dB
dB
dB
min
typ
max
100
1
Unit
nA
µA
Ratio between 2 elements
0 to 0.05
0.1 to 0.3
0.8
0.16
–0.06
+0.2
s
Basic Part Number of Element
+0.1
1.45±0.1
s
Features
0.5
–0.05
+0.1
+0.1
1
Composite Transistors
P
T
— Ta
500
XN6537
I
C
— V
CE
30
Ta=25˚C
60
V
CE
=10V
50
25˚C
I
C
— V
BE
Total power dissipation P
T
(mW)
Collector current I
C
(mA)
Collector current I
C
(mA)
400
25
20
300
I
B
=300µA
250µA
200µA
40
Ta=75˚C
–25˚C
15
30
200
10
150µA
100µA
20
100
5
50µA
0
0
40
80
120
160
10
0
0
2
4
6
8
10
12
0
0
0.4
0.8
1.2
1.6
2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
100
h
FE
— I
C
I
C
/I
B
=10
240
V
CE
=10V
8
f
T
— I
C
V
CE
=10V
Ta=25˚C
Collector to emitter saturation voltage V
CE(sat)
(V)
200
Transition frequency f
T
(GHz)
10
30
100
30
10
3
1
0.3
0.1
0.03
0.01
0.1
Forward current transfer ratio h
FE
6
160
Ta=75˚C
120
25˚C
80
–25˚C
40
4
25˚C
Ta=75˚C
–25˚C
0.3
1
3
10
30
100
2
0
0.1
0.3
1
3
0
–1
–3
–10
–30
–100
Collector current I
C
(mA)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
1.2
NF — I
C
f=1MHz
I
E
=0
Ta=25˚C
S
11
, S
22
0.8
1
8
7
R
g
=50Ω
V
CE
=10V
f=800MHz
0.2
0.6
0.4
Collector output capacitance C
ob
(pF)
1.5
2
V
CE
=10V
I
C
=20mA
E: earth
3
4
5
10
1.0
0.8
Noise figure NF (dB)
6
5
0
.2
.4
.6 .8 1
800MHz
500MHz
1.5 2
1000MHz
3 4 5
S
22
800MHz
500MHz
10
–10
–5
–4
0.6
4
3
2
1
1000MHz
S
11
–0.2
0.4
–0.4
–0.6
–0.8
–1
–2
–1.5
–3
0.2
0
1
3
10
30
100
0
1
3
10
30
100
Collector to base voltage V
CB
(V)
Collector current I
C
(mA)
2
Composite Transistors
S
12
, S
21
+90˚
+120˚
S
21
500MHz
800MHz
1000MHz
±180˚
–10 –15 –20 –25 –30
500MHz
+60˚
1000MHz
800MHz
V
CE
=10V
I
C
=20mA
E: earth
XN6537
+150˚
+30˚
5
10 15
S
12
20
0˚
–150˚
–30˚
–120˚
–90˚
–60˚
3
