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XSD215

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

器件类别:分立半导体    晶体管   

厂商名称:SIPEX

厂商官网:http://www.sipex.com/

下载文档
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
SIPEX
Reach Compliance Code
unknown
配置
Single
最大漏极电流 (Abs) (ID)
0.05 A
FET 技术
METAL-OXIDE SEMICONDUCTOR
工作模式
ENHANCEMENT MODE
最高工作温度
125 °C
极性/信道类型
N-CHANNEL
最大功率耗散 (Abs)
1.2 W
文档预览
High-Speed Analo
N-Channel DMOS FETs
CORPORATION
SD211 / SD213 / SD215
FEATURES
DESCRIPTION
The Calogic SD211 is a 30V analog switch driver with built-in
protection diode from gate to substrate The SD211 is used
with SD213 and SD215 DMOS analog switches.
ORDERING INFORMATION
Part
SD211E
XSS211
SD213DE
XSD213
SD215DE
XSD215
Package
Hermetic TO-72 Package
Sorted Chips in Carriers
Hermetic TO-72 Package
Sorted Chips in Carriers
Hermetic TO-72 Package
Sorted Chips in Carriers
Temperature Range
-55
o
C to +125
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
High Input to Output Isolation . . . . . . . . . . . . . . . . 120dB
Low On Resistance . . . . . . . . . . . . . . . . . . . . . . . . 30 Ohm
Low Feedthrough and Feedback Transients
Low Capacitance:
Input (Gate). . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4pF typ.
Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3pF typ.
Feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3pF typ.
Built-in Protection Diode from Gate to Substrate
APPLICATIONS
SD211:
Analog Switch Driver
SD213 and SD215:
Analog Switches
High-Speed Digital Switches
Multiplexers
A to D Converters
D to A Converters
Choppers
Sample & Hold
SCHEMATIC DIAGRAM (Top View)
BODY AND
CASE
SOURCE
1
4
TO-72
2
DRAIN
3
GATE
G
C
D
1Q-24
BODY IS INTERNALLY CONNECTED
TO THE CASE
S
CD1-1
CALOGIC CORPORATION,
237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025
SD211 / SD213 / SD215
CORPORATION
ABSOLUTE MAXIMUM RATINGS
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation at 25
o
C Case Temperature . . . 1.2W
Storage Temperatue Range . . . . . . . . . . . . . -65
o
C to +200
o
C
Lead Temperature (1/16" from case for 10 sec.). . . . . . 300
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +125
o
C
V
DS
V
SD
V
DB
V
SB
V
GS
V
GB
V
GD
PARAMETER
Drain-to-Source
Source-to-Drain
Drain-to-Body
Source-to-Body
Gate-to-Source
Gate-to-Body
Gate-to-Drain
SD211
+30
+10
+30
+15
-15
+25
-0.3
+25
-30
+25
SD212
+10
+10
+15
+15
-15
+25
-0.3
+25
-15
+25
SD215
+20
+20
+25
+25
-25
+30
-0.3
+30
-25
+30
UNIT
V
dc
V
dc
V
dc
V
dc
V
dc
V
dc
V
dc
DC CHARACTERISTICS
(T
A
= 25
o
C, unless otherwise specified)
SYMBOL
PARAMETER
SD211
SD213
SD215
UNITS
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
BREAKDOWN VOLTAGE
BV
DS
BV
SD
BV
DB
BV
SB
Drain-to-Source
Source-to Drain
Drain-to-Body
Source-to-Body
30
10
10
15
15
35
25
10
10
15
15
25
20
20
25
25
25
V
V
GS
= V
BS
= 0V, I
D
= 10µA
V
GS
= V
BS
= -5V, I
S
= 10nA
V
GD
= V
BD
= -5V, I
D
= 10nA
V
GB
= 0V, source OPEN, I
D
= 10nA
V
GB
= 0V, drain OPEN, I
S
= 10µA
LEAKAGE CURRENT
I
DS
(OFF)
Drain-to-Source
1
10
1
10
1
I
SD
(OFF)
I
GBS
V
T
Source-to-Drain
Gate
Threshold Voltage
0.5
1.0
50
r
DS
(ON)
Drain-to-Source
Resistance
30
23
19
1
10
1
10
1
10
2.0
70
45
0.1
1.0
50
30
23
19
10
2.0
70
45
0.1
1.0
50
30
23
19
17
10
10
2.0
70
45
V
10
nA
V
GS
= V
BS
= -5V, V
DS
= +10V
V
GS
= V
BS
= -5V, V
DS
= +20V
V
GS
= V
BD
= -5V, V
SD
= +10V
V
GS
= V
BD
= -5V, V
SD
= +20V
V
DB
= V
SB
= 0V, V
GS
=
±40V
V
DS
= V
GS
= V
T
, I
S
= 1µA, V
SB
= 0V
I
D
= 1.0mA, V
SB
= 0, V
GS
= +5V
I
D
= 1.0mA, V
SB
= 0, V
GS
= +10V
I
D
= 1.0mA, V
SB
= 0, V
GS
= +15V
I
D
= 1.0mA, V
SB
= 0, V
GS
= +20V
I
D
= 1.0mA, V
SB
= 0, V
GS
= +25V
AC ELECTRICAL CHARACTERISTICS
SYMBOL
gfs
PARAMETER
Forward
Transconductance
Gate Node
Drain Node
Source Node
SD211
SD213
SD215
MIN TYP MAX MIN TYP MAX MIN TYP MAX
10
15
10
15
10
15
UNITS
ms
TEST CONDITIONS
V
DS
= 10V, V
SB
= 0V,
I
D
= 20mA, f = 1kHz
SMALL SIGNAL CAPACITANCES
C
ISS
C
OSS
C
RSS
2.4
1.3
0.3
3.5
1.5
0.5
2.4
1.3
0.3
3.5
1.5
0.5
2.4
1.3
0.3
3.5
1.5
0.5
pF
V
DS
= 10V, f = 1MHz
V
GS
= V
BS
= -15V
Information furnished by Calogic is believed to be accurate and reliable. However, no responsibility is assumed for its use: nor for any infringement of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent rights of Calogic.
CALOGIC CORPORATION,
237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025
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参数对比
与XSD215相近的元器件有:XSD211、XSD213。描述及对比如下:
型号 XSD215 XSD211 XSD213
描述 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
是否Rohs认证 不符合 不符合 不符合
厂商名称 SIPEX SIPEX SIPEX
Reach Compliance Code unknown unknown unknown
配置 Single Single Single
最大漏极电流 (Abs) (ID) 0.05 A 0.05 A 0.05 A
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 125 °C 125 °C 125 °C
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL
最大功率耗散 (Abs) 1.2 W 1.2 W 1.2 W
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