NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 2 – APRIL 2002
FEATURES
* 400 Volt V
CEO
* 0.5 Amp continuous current
* P
tot
=1 Watt
APPLICATIONS
* Telephone dialler circuits
ZTX658
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
derate above 25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
400
400
5
1
500
1
5.7
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
mA
W
mW/ °C
°C
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector Cut-Off
Current
SYMBOL MIN.
V
(BR)CBO
V
(BR)CEO)
V
(BR)EBO
I
CBO
I
CBO
400
400
5
100
100
100
0.3
0.25
0.5
0.9
0.9
50
50
40
TYP.
MAX.
UNIT
V
V
V
nA
nA
nA
V
V
V
V
V
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=320V
V
CE
=320V
V
EB
=4V
I
C
=20mA, I
B
=1mA
I
C
=50mA, I
B
=5mA*
I
C
=100mA, I
B
=10mA*
I
C
=100mA, I
B
=10mA*
IC=100mA, V
CE
=5V*
I
C
=1mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=200mA, V
CE
=10V*
Emitter Cut-Off Current I
EBO
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
3-229
ZTX658
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
50
10
130
3300
TYP.
MAX.
UNIT
MHz
pF
ns
ns
CONDITIONS.
I
C
=20mA, V
CE
=20V
f=20MHz
V
CB
=20V, f=1MHz
I
C
=100mA, V
C
=100V
I
B1
=10mA, I
B2
=-20mA
Transition Frequency f
T
Output capcitance
Switching times
C
obo
t
on
t
off
* Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance:Junction to Ambient
1
Junction to Ambient
2
Junction to Case
SYMBOL
R
th(j-amb)1
R
th(j-amb)2
†
R
th(j-case)
MAX.
175
116
70
UNIT
°C/W
°C/W
°C/W
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
2.5
200
Max Power Dissipation - (Watts)
Thermal Resistance (°C/W)
D=1 (D.C.)
2.0
t
1
D=t
1
/t
P
t
P
C
1.5
as
e
te
m
pe
1.0
Am
ra
100
D=0.5
bie
tu
nt t
re
em
0.5
0
per
at u
re
D=0.2
D=0.1
Single Pulse
-40 -20
0
20 40
60 80 100 120 140 160 180 200
0
0.0001
0.001
0.01
0.1
1
10
100
T -Temperature
(°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-230
ZTX658
TYPICAL CHARACTERISTICS
I
C
/I
B
=10
I
C
/I
B
=20
I
C
/I
B
=50
T
amb
=25°C
1.6
1.4
-55°C
+25°C
+100°C
+175°C
1.6
I
C
/I
B
=10
V
CE(sat)
- (Volts)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
V
CE(sat)
- (Volts)
0.01
0.1
1
10
20
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
20
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
CE(sat)
v I
C
V
CE(sat)
v I
C
1.6
h
FE
- Normalised Gain
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
+100°C
+25°C
-55°C
V
CE
=10V
1.6
300
1.4
-55°C
+25°C
+100°C
+175°C
I
C
/I
B
=10
h
FE
- Typical gain
V
BE(sat)
- (Volts)
1.2
1.0
0.8
0.6
0.4
0.2
200
100
0.01
0.1
1
10 20
0
0.001
0.01
0.1
1
10
20
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
1.0
-55°C
+25°C
+100°C
+175°C
V
BE(sat)
v I
C
Single Pulse Test at T
amb
=25°C
1.6
1.4
V
CE
=10V
I
C
- Collector Current (Amps)
V
BE
- (Volts)
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10 20
0.1
0.01
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.001
1
10
100
1000
I
C
-
Collector Current (Amps)
V
CE
-
Collector Voltage (Volts)
V
BE(on)
v I
C
Safe Operating Area
3-231
Microchip MCU
