ZXMD63P03X
DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
=-30V; R
DS(ON)
=0.185V; I
D
=-2.0A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
MSOP8
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
Low profile SOIC package
N-channel
P-channel
APPLICATIONS
•
DC - DC converters
•
Power management functions
•
Disconnect switches
•
Motor control
Pin-out
ORDERING INFORMATION
DEVICE
ZXMD63P03XTA
ZXMD63P03XTC
REELSIZE
(inches)
7
13
TAPE WIDTH
(mm)
12 embossed
12 embossed
QUANTITY
PER REEL
1,000
4,000
DEVICE MARKING
ZXM63P03
Top view
ISSUE 1 - OCTOBER 2005
1
SEMICONDUCTORS
49
ZXMD63P03X
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
Continuous Drain Current
(V
GS
=4.5V; T
A
=25°C)(b)(d)
(V
GS
=4.5V; T
A
=70°C)(b)(d)
Pulsed Drain Current (c)(d)
Continuous Source Current (Body Diode)(b)(d)
Pulsed Source Current (Body Diode)(c)(d)
Power Dissipation at T
A
=25°C (a)(d)
Linear Derating Factor
Power Dissipation at T
A
=25°C (a)(e)
Linear Derating Factor
Power Dissipation at T
A
=25°C (b)(d)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
DSS
V
GS
I
D
I
DM
I
S
I
SM
P
D
P
D
P
D
T
j
:T
stg
P-CHANNEL
-30
20
2.0
1.6
-9.6
-1.4
-9.6
0.87
6.9
1.04
8.3
1.25
10
-55 to +150
UNIT
V
V
A
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)(d)
Junction to Ambient (b)(d)
Junction to Ambient (a)(e)
SYMBOL
R
θJA
R
θJA
R
θJA
VALUE
143
100
120
UNIT
°C/W
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ISSUE 1 - OCTOBER 2005
2
SEMICONDUCTORS
ZXMD63P03X
CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
3
SEMICONDUCTORS
ZXMD63P03X
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance (1)
Forward Transconductance (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING (2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
V
SD
t
rr
Q
rr
21.4
15.7
-0.95
V
ns
nC
T
j
=25°C, I
S
=-1.2A,
V
GS
=0V
T
j
=25°C, I
F
=-1.2A,
di/dt= 100A/µs
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
2.6
4.8
13.1
9.3
7
1.2
2
ns
ns
ns
ns
nC
nC
nC
V
DS
=-24V,V
GS
=-10V,
I
D
=-1.2A
(Refer to test
circuit)
V
DD
=-15V, I
D
=-1.2A
R
G
=6.2Ω, R
D
=6.2Ω
(Refer to test
circuit)
C
iss
C
oss
C
rss
270
80
30
pF
pF
pF
V
DS
=-25 V, V
GS
=0V,
f=1MHz
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
0.92
-1.0
0.185
0.27
-30
-1
100
V
µA
nA
V
Ω
Ω
S
I
D
=-250µA, V
GS
=0V
V
DS
=-30V, V
GS
=0V
V
GS
= 20V, V
DS
=0V
I =-250µA, V
DS
=V
GS
D
V
GS
=-10V, I
D
=-1.2A
V
GS
=-4.5V, I
D
=-0.6A
V
DS
=-10V,I
D
=-0.6A
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
®2%
.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - OCTOBER 2005
4
SEMICONDUCTORS
ZXMD63P03X
TYPICAL CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
5
SEMICONDUCTORS
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