ST(意法半导体)
N-channel TrenchMOS transistor
Philips Semiconductors (NXP Semiconductors N.V.)
N-channel TrenchMOS transistor
Vishay(威世)
MOSFET N-Chan 200V 18 Amp
International Rectifier （ Infineon ）
N-channel TrenchMOS transistor
NXP(恩智浦)
TRANSISTOR 16 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-404, D2PAK-3, FET General Purpose Power
Motorola ( NXP )
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Vishay(威世)
Power Switch ICs - Power Distribution SMART HIGH SIDE MINI-PROFET
International Rectifier （ Infineon ）
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
NXP(恩智浦)
TRANSISTOR 16 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-404, D2PAK-3, FET General Purpose Power
ST(意法半导体)
18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3
International Rectifier （ Infineon ）
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Vishay(威世)
MOSFET N-Chan 200V 18 Amp
International Rectifier （ Infineon ）
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Vishay(威世)
——
International Rectifier （ Infineon ）
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
Vishay(威世)
Power MOSFET
Vishay(威世)
MOSFET N-Chan 200V 18 Amp
International Rectifier （ Infineon ）
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Vishay(威世)
漏源电压（Vdss）：200V 连续漏极电流（Id）（25°C 时）：18A 栅源极阈值电压：4V @ 250uA 漏源导通电阻：180mΩ @ 11A,10V 最大功率耗散（Ta=25°C）：3.1W 类型：N沟道
International Rectifier （ Infineon ）
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
Vishay(威世)
Power MOSFET
