International Rectifier （ Infineon ）
1.35 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Intersil ( Renesas )
1.35 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
SEME-LAB
1.35 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
New Jersey Semiconductor
1.35 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Vishay(威世)
Power Field-Effect Transistor, 1.35A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205
Rochester Electronics
1.25A, 400V, 4.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
Renesas(瑞萨电子)
1.35A, 400V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Fairchild
Power Field-Effect Transistor, 1.35A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
Harris
Power Field-Effect Transistor, 1.35A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
TT Electronics plc
Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
SEMELAB
1.25A, 400V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
Motorola ( NXP )
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
FREESCALE (NXP)
TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,1.25A I(D),TO-205AF
SEMELAB
1.25A, 400V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
TT Electronics plc
Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
SEMELAB
1.25A, 400V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
TT Electronics plc
Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
Infineon(英飞凌)
1.25A, 400V, 4.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
International Rectifier （ Infineon ）
1.25A, 400V, 4.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
Harris
Power Field-Effect Transistor, 1.35A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
Renesas(瑞萨电子)
TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,1.35A I(D),TO-205AF
Thomson Consumer Electronics
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Intersil ( Renesas )
TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,1.35A I(D),TO-205AF
SEMELAB
1.25A, 400V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
TT Electronics plc
Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
Infineon(英飞凌)
Power Field-Effect Transistor, 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
International Rectifier （ Infineon ）
Power Field-Effect Transistor, 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
International Rectifier （ Infineon ）
Power Field-Effect Transistor, 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
