Intersil ( Renesas )
15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
Rochester Electronics
15A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Fairchild
Power Field-Effect Transistor, 16A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Harris
Power Field-Effect Transistor, 15A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
SAMSUNG(三星)
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Renesas(瑞萨电子)
15A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
International Rectifier （ Infineon ）
Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=15A)
Vishay(威世)
MOSFET N-Chan 250V 15 Amp
ISC
isc N-Channel MOSFET Transistor
SAMSUNG(三星)
Power Field-Effect Transistor, 16A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
ISC
isc N-Channel MOSFET Transistor
Fairchild
250V N-Channel MOSFET
Fairchild
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
International Rectifier （ Infineon ）
15 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
IR
漏源电压（Vdss）：250V 连续漏极电流（Id）（25°C 时）：15A 栅源极阈值电压：4V @ 250uA 漏源导通电阻：280mΩ @ 9A,10V 最大功率耗散（Ta=25°C）：150W 类型：N沟道 N沟道,250V,15A,280mΩ@10V
Vishay(威世)
MOSFET N-Chan 250V 15 Amp
Vishay(威世)
Power MOSFET
Vishay(威世)
Power MOSFET
