ISSI(芯成半导体)
32K X 8 STANDARD SRAM, 10 ns, PDSO28
ISSI(芯成半导体)
32K x 8 LOW VOLTAGE CMOS STATIC RAM
ISSI(芯成半导体)
32K X 8 STANDARD SRAM, 10 ns, PDSO28
Integrated Silicon Solution ( ISSI )
Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28
ISSI(芯成半导体)
32K X 8 STANDARD SRAM, 10 ns, PDSO28
Integrated Silicon Solution ( ISSI )
Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28
ISSI(芯成半导体)
32K X 8 STANDARD SRAM, 10 ns, PDSO28
Integrated Silicon Solution ( ISSI )
Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, 0.300 INCH, LEAD FREE, PLASTIC, SOJ-28
All Sensors
sram 256k 32kx8 10ns async sram 3.3v
ISSI(芯成半导体)
SRAM 256K 32Kx8 10ns Async SRAM 3.3v
Integrated Silicon Solution ( ISSI )
Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, 0.300 INCH, LEAD FREE, PLASTIC, SOJ-28
All Sensors
sram 256k 32kx8 10ns async sram 3.3v
ISSI(芯成半导体)
SRAM 256K 32Kx8 10ns Async SRAM 3.3v
ISSI(芯成半导体)
32K X 8 STANDARD SRAM, 10 ns, PDSO28
Integrated Silicon Solution ( ISSI )
32KX8 STANDARD SRAM, 10ns, PDSO28, 8 X 13.40 MM, MO-183, TSOP1-28
ISSI(芯成半导体)
32K X 8 STANDARD SRAM, 10 ns, PDSO28
Integrated Silicon Solution ( ISSI )
32KX8 STANDARD SRAM, 10ns, PDSO28, 8 X 13.40 MM, MO-183, TSOP1-28
ISSI(芯成半导体)
存储器接口类型：Parallel 存储器容量：256Kb (32K x 8) 工作电压：3.3V 存储器类型：Volatile 256-Kbit(32K x 8bit)，并行接口，工作电压：3.3V
Integrated Silicon Solution ( ISSI )
Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, 8 X 13.40 MM, LEAD FREE, MO-183, TSOP1-28
Integrated Silicon Solution ( ISSI )
Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, 8 X 13.40 MM, LEAD FREE, MO-183, TSOP1-28
ISSI(芯成半导体)
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All Sensors
sram 256k 32kx8 10ns async sram 3.3v
ISSI(芯成半导体)
SRAM 256K 32Kx8 10ns Async SRAM 3.3v
Integrated Silicon Solution ( ISSI )
Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, 8 X 13.40 MM, LEAD FREE, MO-183, TSOP1-28
