Grayhill
SPECIAL SWITCH-JOYSTICK SWITCH, 4PST, MOMENTARY, 2A, 28VDC, THROUGH HOLE-STRAIGHT
Grayhill
SPECIAL SWITCH-JOYSTICK SWITCH, 4PST, MOMENTARY, 2A, 28VDC, THROUGH HOLE-STRAIGHT
Microsemi
5 A, 1200 V, SILICON CARBIDE, BRIDGE RECTIFIER DIODE
Microsemi
6 A, 600 V, SILICON CARBIDE, BRIDGE RECTIFIER DIODE
ADPOW
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Advanced Power
power mos VI is a new generation of low gate charge, high voltage N-channel enhancement mode power mosFETs
Microsemi
TRANSISTOR,MOSFET,N-CHANNEL,1KV V(BR)DSS,11A I(D),CHIP / DIE
Microsemi
1.5A, 1000V, 11.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
ADPOW
Power Field-Effect Transistor, 1.5A I(D), 1000V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ADPOW
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
Advanced Power
power mos V is a new generation of high voltage N-channel enhancement mode power mosFETs
Microsemi
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Microsemi
11A, 1000V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN
ADPOW
Power Field-Effect Transistor, 11A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
Microsemi
MOSFET N-CH 1000V 10.5A TO247AD
ADPOW
Power Field-Effect Transistor, 10.5A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Advanced Power
N-channel enhancement mode high voltage power mosfets
Microsemi
10.5A, 1000V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
ADPOW
Power Field-Effect Transistor, 10.5A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Microsemi
10.5A, 1000V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN
ADPOW
Power Field-Effect Transistor, 10.5A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN
Microsemi
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
ADPOW
Power Field-Effect Transistor, 10.5A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
Microsemi
10.5A, 1000V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Microsemi
10.5A, 1000V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN
ADPOW
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Advanced Power
power mos V is a new generation of high voltage N-channel enhancement mode power mosFETs.
Microsemi
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Microsemi
TRANSISTOR,MOSFET,N-CHANNEL,1KV V(BR)DSS,CHIP / DIE
ADPOW
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
