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10AM05

RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, 55CX, 2 PIN

器件类别:分立半导体    晶体管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
Microsemi
包装说明
55CX, 2 PIN
针数
2
Reach Compliance Code
unknown
ECCN代码
EAR99
Is Samacsys
N
Base Number Matches
1
文档预览
10AM05
5.0 Watts, 20 Volts, Class A
Linear to 1000 MHz
GENERAL DESCRIPTION
The 10AM05 is a COMMON EMITTER transistor capable of providing 5
Watts of Class A, RF output power to 1000 MHz. This transistor is
specifically designed for general Class A amplifier applications. It utilizes
gold metalization and diffused ballasting to provide high reliability and
supreme ruggedness.
CASE OUTLINE
55CX, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
25 Watts
50 Volts
3.5 Volts
3.0 Amps
- 65 to + 150
o
C
+ 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pin
Pg
Ft
VSWR
CHARACTERISTICS
Power Out
Power Input
Power Gain
Transition Frequency
Load Mismatch Tolerance
TEST CONDITIONS
F = 1.0 GHz
Ic = 1.0 A
Vcc =20 Volts
Vce = 20 V, Ic =1 A
MIN
5.0
.63
9.0
2.0
10
2.5
30:1
TYP
MAX
UNITS
Watts
Watts
dB
GHz
BVebo
BVces
BVceo
h
FE
Cob
θ
jc
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Breakdown
DC Current Gain
Output Capacitance
Thermal Resistance
Ie = 6.0 mA
Ic = 60 mA
Ic = 60 mA
Vce = 5 V, Ic = 400 mA
Vcb = 20V, f =1.0 MHz
3.5
50
24
20
16.0
5
7.0
Volts
Volts
Volts
pF
C/W
o
Issue February 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
10AM05
Typical Performance
10AM05-1 (20V, 1A)
MMICAD for Windows Thu Jul 07 16:06:47 1994
CIRCUIT: MES
FREQ
--- S11 ---
MHz MAG ANG
0.100
0.200
0.300
0.400
0.500
0.600
0.700
0.800
0.900
1.000
1.100
1.200
1.300
1.400
1.500
1.600
1.700
1.800
1.900
2.000
0.96742 -178.578
0.96720 179.185
0.96747 177.458
0.96427 176.092
0.95961 174.798
0.95260 173.446
0.94398 172.113
0.93233 171.035
0.91359 169.768
0.88536 168.736
0.84731 168.856
0.81562 171.232
0.82895 174.640
0.87501 175.941
0.91716 174.915
0.94486 173.174
0.96124 171.202
0.97036 169.159
0.97562 167.326
0.97986 165.559
--- S21 ---
MAG ANG
5.52129 86.6101
2.80616 76.6119
1.91520 67.9533
1.48540 59.5022
1.24046 50.9233
1.09105 42.0681
1.00240 32.5895
0.95565 22.1966
0.94253 10.2823
0.95416 -4.40507
0.97060 -23.2356
0.93860 -47.1572
0.80712 -73.5776
0.61574 -97.3336
0.44511 -115.958
0.32126 -130.458
0.23482 -142.151
0.17565 -152.232
0.13354 -160.852
0.10481 -169.653
--- S12 ---
MAG ANG
0.01413 7.82657
0.01454 7.97739
0.01491 8.15256
0.01558 10.2282
0.01659 10.7943
0.01748 11.3540
0.01885 8.26448
0.02057 5.12179
0.02200 -1.26575
0.02434 -10.7911
0.02503 -27.0540
0.02379 -49.4025
0.01862 -77.4494
0.01219 -111.084
0.00716 -156.066
0.00664 153.602
0.00818 117.011
0.01034 102.362
0.01142 88.1325
0.01323 87.1431
--- S22 ---
MAG ANG
0.57907 -169.199
0.58427 -172.736
0.59197 -172.623
0.60408 -172.203
0.61700 -171.571
0.63482 -170.968
0.65454 -170.362
0.67717 -169.881
0.70560 -169.280
0.74682 -168.798
0.80521 -169.416
0.87453 -172.429
0.91426 -177.592
0.91435 177.434
0.89399 174.110
0.87610 171.769
0.86263 170.082
0.85629 168.606
0.85016 167.140
0.84779 165.793
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参数对比
与10AM05相近的元器件有:。描述及对比如下:
型号 10AM05
描述 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, 55CX, 2 PIN
是否无铅 含铅
是否Rohs认证 不符合
厂商名称 Microsemi
包装说明 55CX, 2 PIN
针数 2
Reach Compliance Code unknown
ECCN代码 EAR99
Is Samacsys N
Base Number Matches 1
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